Marcus Rosales 1.  RAM  Main memory storage device  Semiconductor Memory 2

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Presentation transcript:

Marcus Rosales 1

 RAM  Main memory storage device  Semiconductor Memory 2

 High energy consumption  Charge leakage  Heat production  Moore’s Law whine-about-transistor-leakage / 3

 Magnetic random access memory (MRAM) nanotubes/carbon-nanotube-based-magnetic-tunnel-junctions-mtjs- for-spintronics-application 4

 Giant magnetoresistance (GMR)  Magnetic tunnel junction (MTJ)  Similar:  Parallel: Low Resistance  Anti-parallel: High Resistance nanotubes/carbon-nanotube-based-magnetic-tunnel-junctions-mtjs-for- spintronics-application

 Photolithography  Photo=Light  Lithos=Stone  Graphy=Writing

7 IrMn Ta Ru Ta Ru CoFeB Ta Ru CoFe CoFeB MgO Oxygen Plasma Ar + ion beam SiO 2 Deposition PlanarizationTop Electrode Deposition R = 200nm Weigang Wang

/  MTJ and spin-tronics  MRAM ▪ Nonvolatile ▪ Energy Efficient  Applications outside of information storage. 8

 NSF  Nasa space grant members  Nasa space grant administration and metors  Other thanks  Rebekah Cross, Amber Hawkins, Dr. Pitucco, and Dr. Manne.  Weigang Wang  Graduate students:  Ty Newhouse-Illige  Hamid Almasi  Undergraduate students:  Christian Dane Gentry 9

10

nanotubes/carbon-nanotube-based-magnetic-tunnel-junctions-mtjs- for-spintronics-application 11

12

 Bio-sensor  An analytical device, used for the detection of a substance or chemical constituent that is of interest in an analytical procedure, for a biological component.  Spin Battery  Quantum Computing 13

14  Conservation of spin during tunneling.  Conductance product of the DOS of two FM electrodes 14 ParallelAnti-Parallel Weigang Wang