Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh

Summary For InGaAs samples: -- The time dependent annealing tests have been finished at all three temperatures (250’C, 275’C and 300’C). The diffusion length measurements are still in process -- Two batch of Ni-InGaAs devices have been finished to test the contact resistance. For neural probe samples: -- The Si on a new batch of 6 samples have been thinned down with Atsunori and YunGoo’s help, thanks a lot for help. -- I received the samples on Monday, and the dots layer writing and metal deposition have been finished. 2

Time-sequential Diffusion Test 3 Anneal TempFin WidthTime Sequence 250’C 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm,100nm, 150nm, 200nm, 300nm, 500nm 5min, 10min, 20min, 40min, 60min, 90min, 120min 275’C 3min, 6min, 12min, 20min, 30min, 40min 300’C 2min, 4min, 6min, 8min, 10min, 15min

250’C Test 4 Fin [110] 10 min20 min40 min 60 min90 min120 min

250’C Test 5 Fin [100] 10 min20 min40 min 60 min90 min120 min

275’C Test 6 Fin [110] 3 min6 min12 min 20 min30 min40 min

275’C Test 7 Fin [100] 3 min6 min12 min 20 min30 min40 min

300’C Test 8 Fin [110] 2 min4 min6 min 8 min10 min15 min

300’C Test 9 Fin [100] 2 min4 min6 min 8 min10 min15 min

Ni-InGaAs Contact Resistance Test 10 1 st batch of samples: Before electrode writing After electrode writing

11 2 st batch of samples: Non-annealed Annealed ~ 10 6 Ohm~ 10 8 Ohm

Plan 1.Continue on the Ni-InGaAs diffusion length measurement. 2.Start testing the TEM sample process -- Transfer of InGaAs Fins on copper TEM grids 3.Prepare new set of neural probe samples according to the feedback of pillar etching 12