Metrology Roadmap Europe Rien Stoup(PAN Analytical) Mauro Vasconi (ST) Japan Yuichiro Yamazaki (Toshiba) Kazuo Nishihagi (Technos) Atsuko Yamaguchi (Hitachi) Shinji Fujii (Panasonic) Korea Taiwan Baw-Ching Perng (TSMC) US Jack Martinez (NIST) Alain Diebold (Int. SEMATECH)

L above 2 mm is really CD variation LWR as a Function of L L above 2 mm is really CD variation 2mm CD variation Experiments 3s (nm) Simulation LWR increase becomes negligible at L=2mm Average LWR このグラフは検査領域内のLWRのLへの依存性です。このようなデータを実測し、またシミュレートし、LWRの増加がL=2micronで十分小さくなることを見出しました。また詳細は略しますが、1本のライン上で計測しても、LWR値は場所によってばらつきます。このばらつきもL=2micronで計測すると小さくなることが分かりました。 Inspection-area height L (nm) Confirmed by ... Experiments & Simulation L value works for many resists as well as ADI, resist trim, and after etch

(Inter-tr. LWR+process) L=Wg (gate width) L=2 mm Intra-transistor LWR Total LWR LWR (Small effect on transistor performance) (Both intra- & inter-tr. LWR can be extracted from this LWR) Trench Sidewall Roughness Resistivity Impact L=2 mm might be needed for reliability For electron scattering propose  Max ½ mean free path in Cu = 15 nm Take after barrier depostion LER Lg Typical pattern-size Gate CD (CD in a limited area) Trench + Via CD Trench Linewidth Contact/Via Area Across-Wafer CD-variation Process-caused CD variation Total CD variation (Inter-tr. LWR+process)

(Inter-tr. LWR+process) L=Wg (gate width) L=2 mm Intra-transistor LWR Total LWR LWR (Small effect on transistor performance) (Both intra- & inter-tr. LWR can be extracted from this LWR) Trench Sidewall Roughness Resistivity Impact L=2 mm might be needed for reliability For electron scattering propose  Max ½ mean free path in Cu = 15 nm Take after barrier depostion LER Lg Typical pattern-size Gate CD (CD in a limited area) Trench + Via CD Trench Linewidth Contact/Via Area Across-Wafer CD-variation Process-caused CD variation Total CD variation (Inter-tr. LWR+process)

LER and LWR reported as RMS values integrated over the frequency range specified below LWR = all spatial wavelengths between 1 micron and 20 nm taken over a 2 micron length with a spacing of 10 nm. LER = for reliability all spatial wavelengths between 1 micron to 15 nm taken over a 2 micron length with a spacing of 7.5 nm. LER For monitoring specular scattering – measure from 15 nm to twice the smallest interval using the smallest possible interval. Measure sidewall after barrier metal dep.

p=0(complete diffuse scattering) 5 p=0.3 Measured Cu resistivity without Barrier Metal p=0.3 4 Updated(May2004) 3 ρ(Al):2.74μΩcm Resistivity(μΩcm) 2 p=0.5 1 100 200 300 400 500 Wire width(nm)

Topics for Cross TWG Meetings Litho  Metrology LER/LWR Presentation by Hitachi Propose metrology centric definition in ITRS but values should be broken into low and high spatial frequency regimes and determined based on effects on device performance Low frequency roughness (affects transistor drive current, Vt and leakage current) High frequency roughness (may affect interconnect reliability but smoothed by dopant diffusion and requires additional study) CD control Increase in ADI (printed in resist) to ACI (after etch) CD bias proposed for 2005 Tool-to-tool matching requirements Becoming very critical for mask and wafer CD metrology (see Microlithography World November 2004 and Leica presentation at SPIE BACUS September 2004) Difficulty of achieving this might be noted with separate values for repeatability and matching - Mark those nodes in RED Incorporating CD measurements into APC, scatterometry EUV tool components metrology

Ask about contact/via E-beam measurements of CD might not be accurate If electrical properties are OK then is it true that CD area measurement is not important?

FEP Metrology Questions FINFET Metrology needs? Doping corner rounding makes FIN fully depleted with thicker FIN Gate Dielectric Thickness Timing schedule is ?? 2005 FIB cross-section accuracy issues. Particles on 450 mm wafer 1mm edge exclusion Local Strain High k Gate stack (EOT, k, thickness) SOI/BOX Gate workfunction

FI questions Guidelines for IM Data Standardization Metrology needs to make sure that all data is time-stamped and marked properly