Work in progress – do not publish RF&A/MS 1-page update Analog - carrier Frequency bands LF Analog (0-0.4GHz)RF (0.4-30GHz)mm-wave (30-300GHz)THz (>300GHz)

Slides:



Advertisements
Similar presentations
MICROWAVE FET Microwave FET : operates in the microwave frequencies
Advertisements

MonolithIC 3D Inc., Patents Pending MonolithIC 3D ICs October MonolithIC 3D Inc., Patents Pending.
Work in progress – do not publish RF&A/MS Summer 2012 Chapter overview Membership Application drivers Technologies CMOS, Bipolar, III-V, HVMOS, Passives.
1 Assessment of the potential value return from research topics Follow-up actions ITRS Maastricht 04/07/06.
RF and AMS Technologies for Wireless Communications Working Group International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal.
More than Moore ITRS Summer Meeting 2008 July 14, 2008 San Francisco, CA.
ITRS Spring Conference 2007 Annecy France International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal Technologies.
RF and A/MS Technologies for Wireless Communications Working Group 2 April Work In Progress – Not for Publication 1 PIDS ITWG RF and A/MS Technologies.
Test TWG Spring Workshop - Koenigswinter, Germany Test TWG Spring ITRS Workshop Attendees: Mike Rodgers Prasad Mantri Roger Barth Wataru Uchida.
Wireless RF and Analog/Mixed-Signal IC Technology Roadmap
1 ERD 2012 ITRS Spring Conference – Noordwijk, the Netherlands – Apr. 24, 2012 ITRS Public Conference Emerging Research Devices 2012 ERD Chapter Victor.
Metrology Roadmap 2003 Update EuropeUlrich Mantz (Infineon) Mauro Vasconi (ST) JapanMasahiko Ikeno (Mitsubishi) Toshihiko Osada (Fujitsu) Akira Okamoto.
Work in progress – do not publish RF and Analog/Mixed-Signal Technologies Herbert S. Bennett Acting Chairman for ITRS RF and A/MS.
DRAFT - NOT FOR PUBLICATION 14 July 2004 – ITRS Summer Conference The 2004 ITRS Assembly and Packaging Roadmap Joe Adam TWG Co-Chair.
Beyond CMOS CTSG Dec. 15, 2009 Work in Progress: Not for Distribution Beyond CMOS CTSG IRC Meeting December 15, 2009 DRAFT.
July 13, 2010ITRS public conference – San Francisco1 More-than-Moore Roadmapping Update.
July 12, 2012ITRS public conference – San Francisco1 More-than-Moore Roadmapping Update.
Design and System Drivers Worldwide Design ITWG: T
ITRS Design ITWG Design and System Drivers Worldwide Design ITWG Key messages: 1.- Software is now part of semiconductor technology roadmap 2.-
ITRS Roadmap Design + System Drivers Makuhari, December 2007 Worldwide Design ITWG Good morning. Here we present the work that the ITRS Design TWG has.
ITRS Design + System Drivers July, 2010 Design ITWG Juan-Antonio Carballo Tamotsu Hiwatashi William Joyner Andrew Kahng Noel Menezes Shireesh Verma.
Overall Roadmap Technology Characteristics (ORTC) 2012
Assembly and Packaging TWG
Work in progress – Do not publish RF&A/MS Summer 2011 Analog - carrier Frequency bands LF Analog (0-0.4GHz)RF (0.4-30GHz)mm-wave (30-300GHz)THz(>300GHz)
Assembly and Packaging July 18, 2007
ITRS Winter Conference 2006 The Ambassador Hotel Hsin Chu Taiwan 1 International Technology Roadmap for Semiconductors Assembly and Packaging 2006.
July 14, 2010 San Francisco, California Marriott Hotel Assembly and Packaging.
Power Delivery Network Optimization for Low Power SoC
Miniature Tunable Antennas for Power Efficient Wireless Communications Darrin J. Young Electrical Engineering and Computer Science Case Western Reserve.
Heat Generation in Electronics Thermal Management of Electronics Reference: San José State University Mechanical Engineering Department.
ITRS Design ITWG Design and System Drivers Worldwide Design ITWG Key actions / messages: 1.Software, system level design productivity critical.
Kwangok Jeong and Andrew B. Kahng UCSD VLSI CAD Laboratory
Metal Oxide Semiconductor Field Effect Transistors
TowerJazz High Performance SiGe BiCMOS processes
ECE 6466 “IC Engineering” Dr. Wanda Wosik
Microelectronics for the real world: “Moore” versus “More than Moore” Presented by Juree Hong IEEE 2009 Custom Integrated Circuits Conference (CICC) John.
Analog VLSI Design Nguyen Cao Qui.
Lecture 21: Packaging, Power, & Clock
Jan M. Rabaey Digital Integrated Circuits A Design Perspective.
PED Roadmapping Issues Vijaykrishnan Narayanan Dept. of CSE Penn State University GSRC Workshop, March 20-21, 2003.
Next Generation Integrated Circuits 300 mm wafers Copper metallization Low-K dielectric under interconnect lines High-K dielectric under gate Silicon-on-insulator.
Microwave Interference Effects on Device,
RF MEMS devices Prof. Dr. Wajiha Shah. OUTLINE  Use of RF MEMS devices in wireless and satellite communication system. 1. MEMS variable capacitor (tuning.
ISAT 436 Micro-/Nanofabrication and Applications MOS Transistor Fabrication David J. Lawrence Spring 2001.
Presentation for Advanced VLSI Course presented by:Shahab adin Rahmanian Instructor:Dr S. M.Fakhraie Major reference: 3D Interconnection and Packaging:
1 姓名 : 李國彰 指導教授 : 林志明老師 A 1v 2.4GHz CMOS POWER AMPLIFIER WITH INTEGRATED DIODE LINEARIZER ( The 2004 IEEE Asia-Pacific Conference on Circuits and Systems,
General Licensing Class Oscillators & Components Your organization and dates here.
100+ GHz Transistor Electronics: Present and Projected Capabilities , fax 2010 IEEE International Topical.
Introduction to SYSTEM-ON-PACKAGE(SOP) Miniaturization of the Entire System © 2008 CHAPTER 5.
ITRS: RF and Analog/Mixed- Signal Technologies for Wireless Communications Nick Krajewski CMPE /16/2005.
Text Book: Silicon VLSI Technology Fundamentals, Practice and Modeling Authors: J. D. Plummer, M. D. Deal, and P. B. Griffin Class: ECE 6466 “IC Engineering”
Field Effect Transistors
Work in Progress --- Not for Publication 1 ERD WG 1/15/09 ERD TWG Emerging Research Devices Telecon Meeting No. 3 Jim Hutchby - Facilitating Thursday,
Work in Progress --- Not for Publication 1 ERD WG 1/22/2009 ERD TWG Emerging Research Devices Telecon Meeting No. 4 Jim Hutchby - Facilitating Thursday,
Fan Out WLP Technology Packaging as 2, 3D System in Packaging Solution
Integration through Wafer-level Packaging Approach
ITRS 2000 Update Work In Progress - Do Not Publish! 1 ITRS/ Design TWG Update 2000 System on Chip, Design Productivity, Low Power, Deep Submicron Design.
Tunable Passive Devices Keith Tang Supervisor: Sorin Voinigescu.
Some Microwave Devices Impatt Diodes PIN Diodes Varactor Diodes YIG Devices (Yttrium-Iron Garnet) Dielectric Resonators BIPOLAR TRANSISTORS GaAsFETs HEMT.
• Very pure silicon and germanium were manufactured
The Interconnect Delay Bottleneck.
MoS2 RF Transistor Suki Zhang 02/15/17.
Microwave Motion Sensor Module
Introducing: LTC5553 A 3GHz to 20GHz Microwave Mixer with Integrated LO Buffer ©2017 Analog Devices, Inc. All rights reserved.
Metal Semiconductor Field Effect Transistors
Device Structure & Simulation
INFIERI FermiLab Meeting
Electronics for Physicists
• Very pure silicon and germanium were manufactured
INFIERI FermiLab Meeting
Presentation transcript:

Work in progress – do not publish RF&A/MS 1-page update Analog - carrier Frequency bands LF Analog (0-0.4GHz)RF (0.4-30GHz)mm-wave (30-300GHz)THz (>300GHz) Example applications Automotive controlsCellular60 GHz point-to-pointNo products yet On-chip regulatorsWLANImagingCoordinate with ERD Power managementSerDesAutomotive radar ADC,DACWireless backhaul Chapter scope illustrated above Subgroup updates: CMOS, Bipolar, III-V, HVMOS, Passive devices Common to all: Very few adjustments for productive X-TWG meetings: A&P, Interconnect, MEMS,ERD, PIDS, Test, Design Industry survey 1

Work in progress – do not publish CMOS Adopt TCAD based models following PIDS More consistent values of analog device parameters Reflect impact of local wiring on device parameters Use interconnect roadmap information Review FOMs to better reflect application requirements Apply consistently across technologies: CMOS, bipolar, III-V 2 Bipolar Build the roadmap by simulation Consider performance plateaus of 3-4 years duration Improve the tie to application requirements in defining bipolar timing – Survey? iNEMI?

Work in progress – do not publish III-V technologies Review FOMs vs Technology, introduce enhancement mode FETs Heterogeneous 3D integration 3 Passive devices Review FOMs vs application Consider mm-wave applications Consider new materials for voltage regulation applications HVMOS Add Coff, Leakage current, Ambient /Junction Temperature Expand scope to include 60V for automotive, 100V for MEMS actuation,…

Work in progress – do not publish X-TWG Discussions Assy & Pkg Die-to-Die I/O, Substrate thickness & TSV, Redistribution layers, mm-wave antennae Interconnect thin metal parasitics, Thick metals, TSV, Current densities & E-M MEMS resonators, varactors, switches. –help develop RF FOMs. ERD Create table of Emerging Device X Functional Elements & FOMs Perhaps a micro-workshop in Monterey 4

Work in progress – do not publish X-TWG Discussions(2) PIDS Work to make nanoHub simulator be consistent with RFAMS needs Test Create a table of product test and device characterization needs by frequency band Design Review RFAMS Drivers & FOMS, Include Automotive & Smart-grid drivers SIP vs SOC discussion 5

Work in progress – do not publish 6