Design & Fabrication of a High- Voltage Photovoltaic Device Jennifer Felder North Carolina State University Project Advisor: Chris Kenney
Outline Brief Review Motivation Unique Features of Design (Mask) Design Simulation Fabrication Conclusion
A Brief Review Photoelectric Effect Photovoltaic (PV) Effect/Devices Image courtesy of:
Project Motivation High-Voltage PV EXO Experiment Power Source Unique Features of Device – Wavelength – Temperature – Float-zone Si wafers Impurities Cost
Wavelength Matching Band gap & efficiency Band gap of Si = 1.12 eV λ=hc/E 1.12 eV ~ 1100 nm Solar cells?
Temperature & Efficiency η drops 0.1% per °C above 25°C Ex: If it were 105°F (40.5°C) -1.55% Liquid Xe Solar cells?
100 μm Individual Cell Designs (Mask)
Preliminary Calculations 1. Known Parameters 2. Modeling Equations 3. Calculated Parameters
Mask Design: PV Device Series Connections Various Voltages ( V) From Calculations:
3 Basic Cell Designs Simulated SOI Layer P Diffusion N Diffusion
Optimized Cell Design N-type diffusion area Constraints on area size
Built-in Potential High built-in potential fewer number cells Φ j ≈ 0.97 V (± 0.01 V between designs) Not a deciding factor
SRH Recombination Low recombination high photovoltage generation
Other Simulation Results
Fabrication Stanford Nanofabrication Facility (SNF) Wet oxidation process – Remove organic materials – Remove metal ions – Oxidation Other steps to be finished in future work…
Conclusions Feasibility/Proof of Concept Test Significant Impact – Experiments (EXO) Noise – SLAC – Extended to other PV/solar cell technology, many others!
Acknowledgments Chris Kenney Jasmine Hasi Astrid Tomada Julie Segal DOE SLAC & SNF Staff
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