The 6th International Workshop on Radiation Imaging Detectors, 25 - 29 July 2004, Glasgow Digital X-ray portable scanner based on monolithic semi-insulating.

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Presentation transcript:

The 6th International Workshop on Radiation Imaging Detectors, 25 - 29 July 2004, Glasgow Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images F. Dubecký1, A. Perďochová2, P. Ščepko3, B. Zaťko1, V Sekerka3, V. Nečas2, M. Sekáčová1, M. Hudec3, P. Boháček1 and J. Huran1 1Institute of Electrical Engineering,Slovak Academy of Sciences, SK - 841 04 Bratislava, Slovakia 2Department of Nuclear Physics and Technology, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, SK - 812 19 Bratislava, Slovakia 3T&N Systems, Ltd., Severná 8, SK - 97401 Banská Bystrica, Slovakia

OUTLINE MOTIVATION GaAs material properties Line scan operation DETECTORS: LEC SI GaAs strip line in edge on configuration Characterization of tested detectors Etched trenches in strip line technology Tests of parallel strip connection Microfocus beam tests SCANNER CONSTRUCTION FIRST IMAGES OBTAINED WITH X-ray SCANNER CONCLUSIONS Andrea Perdochova

GaAs MATERIAL PROPERTIES MOTIVATION GaAs MATERIAL PROPERTIES LINE SCANNING TECHNIQUE IN RADIOGRAFIC IMAGING Radiation hardness Low cost Fast Wide band gap – operation at RT Highly developed technology processing Easily commercially available Technical simplest solution Low cost Useful for fast testing of detector applicability in X-ray imaging High quality of X-ray image (good scattered rejection) Useful for many industrial and even medical applications Andrea Perdochova

CHOICE OF GaAs DETECTOR – X-ray SOURCE GEOMETRY Two modes of detector irradiation: 10 2 3 20 30 40 50 60 70 80 90 100 60 keV 30 keV 122 keV Through Schottky contact: absorption length 0.25 mm 25% @ 60 keV Edge on configuration: absorption length 2.5 mm 85% @ 60 keV, high spatial resolution CdTe Zn Cd Te 0.2 0.8 InP GaAs Attenuation, % V1 V2 w1 w2 Material thickness,  m Through Schottky contact Edge on configuration ~ 0.2 mm ~ 0.25 mm 2.5 mm Andrea Perdochova

CHARACTERIZATION OF INVESTIGATED STRIP LINE DETECTOR Substrate: 250 m of bulk undoped LEC SI GaAs - (CMK Ltd, Žarnovica, Slovakia) with resistivity of 5.2  107 Wcm and Hall mobility of 5200 – 5800 cm2V-1s-1 To the DC input of preamplifier 1200 m X - rays 250 m High bias voltage 2500 m Photo and schematic view of monolithic strip line detector segment Andrea Perdochova

SI GaAs strip line detector: SAMO-XS Number of strips in line Pitch (mm) Absorption length Size of line detector Effective absorption volume of strip (mm3) Maximum thickness of detector field (mm) 32 0.25 1.20 8 x 3.5 0.10 0.18 0.2 – 0.3 TOP side BOTTOM side Andrea Perdochova

ETCHED TRENCHES IN TECHNOLOGY OF STRIP LINE DETECTORS Trenches creation: RIE (reactive ion etching) technique, additional photolithographic masking (frame of 8 m) Substrate SI GaAs Top contact Au/Zn Back contact Au/Ge/Ni 250 m 190m 13 m 9 m 50 m 10 m 200 m Etched trench Andrea Perdochova

ELECTRIC AND DETECTION PROPERTIES OF PARALLELLY CONNECTED STRIPS Andrea Perdochova

MICROFOCUS BEAM TEST OF CROSS-TALK BETWEEN NEIGHBOURING STRIP LINE DETECTORS X-ray tube: 60 kV, 50 mA X-ray beam: Ø 250 m Step: 25 m starting from 11th to 13th strip Time of measurement: 1 s RESULT: Negligible cross-talk of strips in line determined Andrea Perdochova Authors are acknowledged to Fraunhofer Institut für Zerstörungsfreie Prüfverfahren EADQ Dresden for enabling the experiments

SI GaAs STRIP LINE DETECTOR ASSEMBLY Detail of chip bonded on PCB Mounted on 0.25 mm thick PCB holder Test prototype of detection line Andrea Perdochova

PROGRESS IN READOUT ELECTRONICS PROTOTYPE CONCEPT: Based on VLSI readout circuit (IWORID 2003) FINAL DESIGN OF F-E READOUT: SMD assembled PCB Prototype series Technical problems High cost Low cost per channel Simple possibility in modification Optimized for used chip holder Andrea Perdochova

480 strip SI GaAs detectors in line 12 cm long (pitch 0.25 mm) FINAL CONSTRUCTION OF X-ray SCANNER BASED ON SAMO XS STRIP LINE DETECTORS 480 strip SI GaAs detectors in line 12 cm long (pitch 0.25 mm) 20 readout analogue cards, each with 24 readout channels View of opened analog scanner part with cooling system (in front) Detection unit of scanner in cover with X possitionning motion system up to 14 cm (in 564 (250 m) or 1650 (85 m) steps) Andrea Perdochova

THE FIRST DIGITAL X-ray SCANNER View of the digital X-ray scanner based on bulk SI GaAs radiation detectors working in quantum mode View of the digital X-ray scanner Andrea Perdochova

FIRST IMAGES OBTAINED WITH X-RAY SCANNER EXPERIMENT X-ray tube: 70 kV, 8 mA, 1 s per line Andrea Perdochova

PHOTOS AND X-ray IMAGES X-ray tube: 70 kV, 8 mA, 0.05 s per line Andrea Perdochova

CONCLUSIONS DETECTOR Succesful realization of line strip detectors based on bulk undoped SI GaAs (CMK Ltd., Žarnovica). CHIP MOUNTING Flexible PCB holders with direct connection through micro-connector. READOUT ELECTRONICS Front-end readout modul fabricated using progressive SMD technology with automatic assembling of electronic devices (24 channels, equivalent noise charge < 400 e- rms , maximum readout rate 105 s-1, memory of each modul, common threshold, USB connection to PC). X-POSSITIONNING MOTION SYSTEM Minimum adjustable step of 0.085 mm. DEVELOPED CONTROLING COMMUNICATION AND IMAGING SOFTWARE 3 corrections including: normalisation of background counting inhomogenities compensation of instabilities in X-ray tube flux compensation of differencies in collection of even and odd 24 strip chips (due to diverging photons) FUTURE PLANS detail study of imaging performance of the developed X-ray scanner improvement of line arrangement increasing spatial resolution using finer step of the line implementaion of collimated X-ray source in the scanning system...

GOLDEN AWARD OF 36th FAIR INCHEBA, BRATISLAVA 2004 Andrea Perdochova