EUDET Annual Meeting, U. Genève 20th October ‘09 JRA2 TA2-SiTRA - Status Report Iv á n Vila Á lvarez Instituto de F í sica de Cantabria [CSIC-UC] Helsinki.

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EUDET Annual Meeting, U. Genève 20th October ‘09 JRA2 TA2-SiTRA - Status Report Iv á n Vila Á lvarez Instituto de F í sica de Cantabria [CSIC-UC] Helsinki U. Helsinki (Fi), LPNHE-U. Pierre & Marie Curie/CNRS-IN2P3 (Fr), Charles U. in Prague (Cz), IFCA (CSIC-U. Cantabria) Santander (Sp). Also contributing to this activity the associated members: CNM-IMB (CSIC) Barcelona, Obninsk State U Rusia, HEPHY Vienna Work also performed within the SiLC R&D collaboration (U. of Barcelona,Torino INFN, ITE Warsaw)

4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila Outline Introduction:  SITRA task scope. ‘09 Activities Report:  Infrastructure: DAQ and FE chip. Mechanics: Modules, faraday cage. Alignment Chip/sensor interconnections Transnational Access

Introduction The SiTRA must provide: => The Silicon Modules and Silicon prototypes => The Faraday & cooling cage => The 3D Table => The alignment system => The FE readout chips => The DAQ system HERE, STATUS REPORT ON THESE ITEMS AND SOME OTHERS CLOSED RELATED R&Ds FROM ASOCIATES. 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

FE R/O chip SiTR_88 UMC 130nm 88 Channels Received in oct 08 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila 5mm Analogue Bias control Digital Layout 10mm

4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila FE R/O chip 88-channel

SiTR_ FPGA in metalic box Oscilloscope Logic analyzer PC and C++ based program allows the control of the circuit USB link Lab test bench of SiTr_88 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

Results from analogue part  Preamp  white track  Shaper  yellow track  Power supply  1.3 mW/channel  Linearity  2.6% up to 24 MIP  Problem with the serial to parallel input of the digital part  Analog part accessible through 88th channel fully equipped with test points

New SiTr_128 development 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila  Optimized silicon surface by using 2f/um² process & reduce analog memories to 4x8  Modular structure by bloc of 64-channel  JTAG integration possibilities  More test & calibration sub-circuit  Possibility to use IBM 130nm CMOS  The direct connection “bump-bonding” is under investigated

The related DAQ system: Hardware part The number of channels to read out is growing Alignment tests (2009)=> 2560 channels Combined calo tests (mid-2010) => à ch > much more !!! DAQ hardware “Kit”, evolutive system VA1 (VFE reference), SiTR_130 and new prototypes, mixed mode FE (Ref+SiTR_130) XILINX modules: Altera/USB (currently available→ Altera/(Ethernet, USBx)? Under development Version For mixed FE chips FPGA system for VA1 onlyRedesign of the module for the new SiTR_ th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

A new DAQ electronics for VA1’ readout only Daughter board The electronic box ADC 16 bits serial ADC 16 bits serial From VA1 Level translation Sr Supplies FPGA Supplies USB Sequencer Serial DATA 220V ac USBTCP IP In study Only one USB link for the whole box sequencer 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

Design of the modules Modules are made of two sensors bonded to each other (bonding performed at CERN bonding Lab) Flexibility wrt the FE chip (hybrid board can be replaced) All kinds of sensor types can be included in this structure Special case are the alignment friendly modules (laser IR integrated in the system) Tests with radioactive source is integrated as well Easy to manipulate -> robust support structure Construction of the Silicon modules 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

Inside the Faraday cage 3 modules with friendly aligned HPK sensors Surrounded with 2 non AL treated HPK sensors Electronics from VA1®  512 ch per sensor,  25.4 mm active area 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

The 3D Table for test beam at CERN 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

SiTRA infrastructure: Laser Alignment System Goal:  Include a laser-based alignment on SiTRA tracking infrastructure. Baseline:  CMS-like HPK large area sensors with back-side Al removed. No further optical optimization. Beyond the baseline (R&D on sensors):  Minimal modification of standard u-strip sensor to boost NIR light transmittance. 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

Alignment: Baseline at Work - CMS LAS 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila (CMS first paper at JINST !!) Optimization of sensors not included from beginning of sensor design: -lower transmittance ~<20% -Some sensors need to be operated in saturation Track-based and laser-based consistent at few tens of microns

SiTRA Alignment – HPK Alignment sensors. 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila Two single –sensor modules R/O with APV25 Chips (512ch ) NIR Transmitance ~ 15-20%

SiTRA Alignment – SPS Test beam 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila AIM: Assessment of SNR for backside removed metallization. Comparison between track- based and laser alignment. Testbeam at CERNs SPS (19. to 26. August 2009) CERN SPS North Area: H6B We used the EUDET Beam Telescope to get triggers and tracks Results About beam 100Kevents + laser 100Kevents. Analysis still in progress

Preliminary TB results SNR sensor scanning comparing Back side with Al vs. n Back side with Al metallization 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila Alignment passage Particle Beam Scanning points

Absolute accuracy Determination Direct comparison with interferometric measurement (accuracy better than 1 um). 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila Straightness measurement configuration all parts available currently being mounted Interferometer reflector Sensor to be calibrated Wollaston prism Laser Paths Reference granite bench

Mask designed by D. Bassignana (CNM) Electronic test structures designed by M. Dragicevic (Vienna) including: CAP TS AC, CAP TS DC, CMS Diode, MOS, GCD, Sheet Optical test structures available (Si, Si+p +,SiO 2, SiO 2 +passivation) GICSERV wafers 12 ustrip detectors per wafer (6 with intermediate strips, without metal contacts) 50 um RO pitch (25 um interm. strip) 256 RO strips 1.5 cm length varying strip width (3,5,10,15 um) Aims: — Test %T vs multigeometry — Use optical test structures (continuous layers) to extract refraction index and control deposition — Test of electrical test structures Prototypes built by CNM-Barcelona (Spain) CNM Transparent sensors 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

T~70-80% test structures No intermediate implant  T=+20% Metal width [3-5] um: second order effect Metal width >10 um:  T≤-5% measured 50 m m 25 µm Intermediate strip 4 th EUDET Annual Meeting9 Wafer 1:: %T 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

SiO2 P nm SiO2 GO49.5 nm P+ / Si / n+ 295 µm SiO2 P nm SiO2 P nm SiO2 FO nm Si / n+295 µm SiO2 P nm SiO2 P nm SiO2 FO nm Si / n+295 µm SiO2 P nm SiO2 P nm SiO2 FO nm Si / n+295 µm SiO2 P nm %T meas %T sim %R meas %R sim OTS1 OTS2 OTS3OTS4 4 th EUDET Annual Meeting7 Optical Test structures simulated (no fit involved) 1 st result: Transmittance of Si can be increased by ~30% with just 2 layers of 1 µm SiO2 Alignment - Measurement vs. Simulation 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

Wafer Overview 3 full halfmoons with improved teststructures  same design as for HPK thin sensor order Additional teststructure (4 x TS_DM)  large double metal capacitor  oxide thickness between metals 5 AC coupled sensors, 80 μm pitch, different integrated PAs:  4 x 128 strips  1 x 512 strips Naming scheme for sensors:  Run Name: ITE09  Wafer Number: W_  Structure Name: STD, PAD,… The Sensor Designs 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

PA Single: Closeup 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila p+ implant metal 1 metal 2 p+ implant metal 1 metal 2

PA Double: Closeup 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila p+ implant metal 1 metal 2 p+ implant metal 1 metal 2

512 Strips (ITE09W_512) 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila Same Strip Geometry as other Sensors but 512 short Strips Long routing lines to test influence on SNR and Crosstalk Routing is for a custom 4 x APV Hybrid Hybrid fits APVDAQ readout system

Module Types ITE Warsaw Sensor:  3 x 512  2 x STD  2 x PAS  2 x PAD 2 x Alignment Modules 2 x Pt Module 2 x SiLC halfmoon for stereo measurements Stack of last years multigeometry sensors for calibration Module Construction 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

Cherished Memories Testbeam at CERNs SPS (19. to 26. August 2009) CERN SPS North Area: H6B Low intensity 120 GeV with  Pi %  p38.95 %  K+5.38 % We used the EUDET Beam Telescope to get triggers and tracks Readout chain from HEPHY’s Electronic 2 Group Slow control/monitoring: HV, T, RH, Cooling Full remote control Results 3.2 Million events 1 TB of data Full Logbook at SPS09/ Testbeam at SPS 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

ITE Runs ITE Sensors with integrated PAs  Beam inside PA area  Beam on strip area  Z - information from rotated SiLC sensor ITE Sensor with 512 Strips  Beam in center  Exact locations to be determined Testbeam at SPS 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

Signal loss: tentative result Data is taken from two runs Height information from additional sensor rotated by 90° Each hit position represents SNR of a cluster with hit location estimated at the respective strip Closer look on signals and noise separately necessary to disentangle effects 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

Standard 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

Pitch Adapter Single Metal 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila

Transnational Aspects 1 - Tests of the current alignment system with with the IR laser (Santander laser test bench) and at SPS test beam still in 2009, conducted by the Torino team 2- Tests of new sensor technologies conducted by HEPHY- Vienna at CERN SPS (15-30 August 2009) (see Th.Bergauer’s presentation). Will be pursued next year. 3 - Combined tests with calorimetry: dual readout test beam at CERN (2010), conducted by italian teams (Pisa) 4- Tests of new sensor technologies: tests of news sensors including new pixel technologies from IRST, VTT (in preparation for 2010): modules will be made at LPNHE&CERN and will be included in the present standalone test infrastructure.

HEPHY tests infrastructure studies: direct application for Superbelle strip detector

Using standalone structure to test new sensor technologies Modules are going to being designed at LPNHE to host various types of new sensor Strip prototypes: new edgeless strip sensors (left) with 5x5cm2 sensors; new short Strip sensors (right) 1.5x1.5 cm2, in 3D technology amd planar edgeless strip sensors 2.5x5cm2 prototypes

Construction of new larger modules for combined test beam with calorimetry Under preparation for next year first for CALICE (can be adapted to other calorimetry tests Surface to be covered: 18x18cm2 in 2010 tests=> first 2 false double sided modules are built Design allows to study various coupling angles between the single sided modules (XUV or small angle tilted modules for false double sided case)

Summary SiTRA activites include: construction of prototypes, design of new FE electronics (based on ref. Chips and new chips), development of the associated DAQ (hardware & software), cooling-Faraday cage and 3D Table, plus a full alignment system based on IR laser system. Transnational based applications of these various infrastructures are occurring in 2009 (2) and at least 2 other before the completion of the programme in 2010.

THANK YOU! 4th EUDET Annual Meeting, U. Geneve, 20th October '09, I. Vila