RAL S&T Rolling Grant CMOS Active Pixel Sensor Development Nov 2004 Nick Waltham Space Science and Technology Department and Mark Prydderch Instrumentation Department Rutherford Appleton Laboratory CMOS Active Pixel Sensor Development for Solar Orbiter

RAL S&T Rolling Grant CMOS Active Pixel Sensor Development Nov 2004 Spectrometer / Imager for ESA’s Solar Orbiter Mission Requirements  Large format sensors: 2k x 2k pixels.  Small pixel size: 10  m.  Science-grade dynamic range, noise, linearity, etc.  EUV sensitivity.  Radiation hard.  Low power.

RAL S&T Rolling Grant CMOS Active Pixel Sensor Development Nov 2004 Science-grade CMOS APS development at RAL 4k x 3k Pixel Sensor Development for ESA’s Solar Orbiter  5  m pixel size.  12 bit dynamic range.  4-transistor CDS pixel for low noise.  0.25  m CMOS process.  EUV sensitivity by back-thinning or front-etch. Architecture Sensor mounted on an invar block and wire-bonded to a PCB Bond-wire protection- cover fitted 8-inch Wafer 0.25  m CMOS 4kx3k pixel sensor die Pixel Circuit CAD Simulation CAD Layout

RAL S&T Rolling Grant CMOS Active Pixel Sensor Development Nov 2004 Science-grade CMOS APS development at RAL Progress to date... Modified Batch 1 wafers  Early test image from modified Batch 1 wafers.  Sufficient progress to proceed with the new Batch 2 wafers. Next Steps...  Characterisation of Batch 1 and Batch 2 samples for:  Readout noise  Dynamic range  Linearity  Leakage current  Pixel uniformity  Radiation tolerance, etc.  Back-thinning (e2v)  New Test-Structures Early test image 4kx3k pixels with JPEG compression for display purposes