Frankfurt (Germany), 6-9 June 2011 Luciano Martini – IT – RIF S1 – Paper 1162 The ECCOFLOW EU FP7 Project: Design and Simulations Results of a Superconducting.

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Presentation transcript:

Frankfurt (Germany), 6-9 June 2011 Luciano Martini – IT – RIF S1 – Paper 1162 The ECCOFLOW EU FP7 Project: Design and Simulations Results of a Superconducting Fault Current Limiter for Operation in Electricity Networks Luciano MARTINI*, Mathias NOE #, Pascal TIXADOR°, Achim HOBL §, Marco BOCCHI* * RSE – Italy # KIT – Germany ° Grenoble INP – France § Nexans SuperConductors – Germany

Frankfurt (Germany), 6-9 June 2011  The Superconducting Fault Current Limiter  The FP7 EU Project ECCOFLOW Participants and objectives Site installations  SFCL Specifications  SFCL Device Conceptual Design  Short-circuit Simulation Results OUTLINE Luciano Martini – IT – RIF S1 – Paper 1162

Frankfurt (Germany), 6-9 June 2011 Luciano Martini – IT – RIF S1 – Paper 1162 Major Benefits from SFCL Applications

Frankfurt (Germany), 6-9 June 2011 Luciano Martini – IT – RIF S1 – Paper 1162 FP7 EU Project ECCOFLOW

Frankfurt (Germany), 6-9 June 2011 Luciano Martini – IT – RIF S1 – Paper 1162 FP7 EU Project ECCOFLOW

Frankfurt (Germany), 6-9 June 2011 Luciano Martini – IT – RIF S1 – Paper 1162 FP7 EU Project ECCOFLOW

Frankfurt (Germany), 6-9 June 2011 Luciano Martini – IT – RIF S1 – Paper 1162 FP7 EU Project ECCOFLOW

Frankfurt (Germany), 6-9 June 2011 Luciano Martini – IT – RIF S1 – Paper 1162 Site 1Site 2ECCOFLOW Nominal Voltage (kV) Nominal Current (A) Short Circuit Current (kA) Max. Limited first peak (kA) Recovery Time (s)< 30 < 3000 AC withstand Voltage (kV) Lightning Impulse (kV) Main specifications for both SFCL locations SFCL Specifications

Frankfurt (Germany), 6-9 June 2011 Luciano Martini – IT – RIF S1 – Paper 1162 Conceptual sketch of the SFCL system including all major parts in a single-phase line diagram SFCL Device Conceptual Design

Frankfurt (Germany), 6-9 June 2011 Luciano Martini – IT – RIF S1 – Paper 1162 Limited current and SFCL temperature after a 120 ms fault transient, as function of shunt impedance Simulation Results

Frankfurt (Germany), 6-9 June 2011 Luciano Martini – IT – RIF S1 – Paper phase fault (V=24 kV, Inom=1 kA, ISC=12 kA rms ): Evolution of ILim, ISC and THTS Short-circuit Simulation Results

Frankfurt (Germany), 6-9 June 2011 This work is funded by the European Union Seventh Framework Program (FP7/ ) under the grant agreement No The authors would like to thank:  K. de Tessieres and J. Bock (Nexans)  J. Frau Valenti (ENDESA) and M. Fedorko (VSE) for providing the network installation information Acknowledgments Luciano Martini – IT – RIF S1 – Paper 1162

Frankfurt (Germany), 6-9 June 2011 Luciano Martini – IT – RIF S1 – Paper 1162