Institute of Solid State Physics of the Bulgarian Academy of Sciences 1784 Sofia, 72, Tzarigradsko Chausse Fax: ; The main scientific and applied achievements of the Institute are in the field of condensed matter physics, laser physics, theory of solid state, theory of phase transitions, superconductivity and superconductive materials, low temperature physics, liquid crystal physics, structure and properties of crystals and amorphous materials, atom and plasma physics, development of high precision thermometers, optical fibers, acoustoelectronic and microelectronic sensors.

Laboratories: Optics and Spectroscopy (total staff: 30; research scientists: 28) Physical Problems of Microelectronics (total staff: 23; res. scientists: 14) Low Temperatures Physics (total staff: 20 ; research scientists: 17) Acoustoelectronics (total staff: 17; research scientists: 6) Metal Vapors Lasers (total staff: 14; research scientists: 12) Photoelectrical and Optical Phenomena in Wide Band Gap Semiconductors (total staff: 11; research scientists: 8) Semiconductor Heterostructures (total staff: 9; research scientists: 7) Theoretical Laboratory (total staff: 9 ; research scientists: 8) Atomic Spectroscopy (total staff: 9; research scientists: 7) Crystal Growth (total staff: 8; research scientists: 7) Cryogenic Technology (total staff: 8; research scientists: 3) Liquid Crystals (total staff: 8; research scientists: 7) Electron-Phonon Interactions (total staff: 8; research scientists: 7) Biomolecular Layers (total staff: 6; research scientists: 6) X-ray Diffraction and Magnetic Resonance (total staff: 6; res. scientists: 4) Cooperative Phenomena in Condensed Matter (total staff:5;res. scientists:2) Molecular Beam Epitaxy (total staff: 3; research scientists:2) Electron Microscopy and Electron Diffraction (total staff: 3; res. scientists: 2)

ISSP has at his disposal rich variety of equipments, precise methods and technologies: Equipment and know-how for monocrystal growth from oxide materials for laser techniques and photorefractive effect applications; X-ray diffraction with topographic, diffractometric and spectrometric facilities, spectroscopic ellipsometry, spectrophotometry in visible and IR regions, methods for electron microscopy and electron diffraction investigations; Technologies for thin film deposition for microelectronic, optoelectronic and acoustoelectronic sensors and laser technology; complex equipment for molecular beam epitaxy; Equipment for synthesis and investigation of high temperature superconducting materials; Equipment for Langmuir-Bloddget layer deposition on various substrates for molecular electronics; polarization measurements in mesophases and polymer liquid crystals for display techniques; equipment for video microscopy and micro manipulation of lipid membranes. Lasers of various systems - metal vapor, hollow cathode, picosecond lasers for plasma physics and laser analysis of materials with possible application in ecology.

Events: 13th International School on Condensed Matter Physics “Advances in the Physics and Technology of Solids and Soft Condensed Matter” Co-organizer - The Electronic Materials Center at the University of Wales Swansea, U.K, August 30th – September 3rd, 2004 Varna, Bulgaria Abstracts submission deadline - June 15, The NATO Advanced Study Institute : “Nanostructured and Advanced Materials for Applications in Sensor, Optoelectronic and Photovoltaic Technology” September 6 –17, 2004, Sozopol, Bulgaria The web site of the school:

International Cooperation: ISSP works on many contracts funded by European Community and COPERNICUS program, on the contract of French-Bulgarian Laboratory "Vesicles and Membranes", on projects and bi-lateral conventions for collaboration with Universities and Research Institutes in Romania, Germany, France, Italy, USA Austria, Australia, Swiss, Greece, Russia, Ukraine, U.K., Poland, Hungary, Croatia etc.

Laboratory “Semiconductor Heterostructures” Associated. Professors : Simeon Simeonov, Ph. D – head of the laboratory Anna Maria Szekeres, Ph. D Sashka Alexandrova, Ph. D Parvane Danesh, Ph. D Sonya Kaschieva, Dr. Sci. Hikolay Peev, Ph. D Research scientist : Elisaveta Kafedjiiska Ph.D students : Tanya Nikolova, Alexander Gushterov

Present scientific research activities on: Preparation and investigation of nano-sized heterostructures for modern micro- and optoelectronics Dielectric and semiconductor thin films : Thermally grown ultrathin silicon dioxide on Si LPCVD and PECVD silicon oxynitride thin films on Si Hydrogenated amorphous silicon film APCVD and PECVD transition metal oxides (MoO 3 and WO 3 ) thin films Measurement techniques : Capacitance-voltage and conductance-voltage measurements at different frequencies (1 Hz- 1 MHz) and temperatures ( K) Current-voltage measurements at different temperatures ( K) Deep level transient spectroscopy (DLTS) Spectral ellipsometry in the range of light nm

The Laboratory has bi-lateral conventions for collaboration with Universities and Research Institutes in Romania, Hungary, Ukraine and Russia. Current projects : “ Electrical and optical properties of CN x -Si,WC x -Si, AlN x -Si, SiC x -Si and BN x -Si heterostructures”, ISSP of BAS - National Institute of Laser, Plasma and Radiation Physics of the Romanian Academy of Sciences “Preparation and investigation of thin oxide layers and semiconductors for microelectronics and optoelectronics”, ISSP of BAS – Institute of Physical Chemistry of the Romanian Academy of Sciences “Study of dopant redistribution in ion implanted semiconductor heterostructures after hgh-energy irradiation”, ISSP of BAS - Institute of Nuclear Research and Nuclear Energy, Dubna, Russia “Investigation of semiconductor structures”, ISSP of BAS - Institute of Metal Physics of the Russian Academy of Sciences “Investigation of structure, structural stress and properties of thin dielectric-silicon structures for application in micro- and nanoelectronics”, ISSP of BAS - Institute of Semiconductor Physics of the Ukraine National Academy of Sciences “Investigation of defects in semiconductor structures with double irradiation”, ISSP of BAS - Institute of Semiconductor Physics of the Ukraine National Academy of Sciences “Optical and elektrical properties of semitransparent metal films on semiconductors”, ISSP of BAS – Institute of Semiconductor Physics of the Ukraine National Academy of Sciences “Structure and properties of thin metal oxide films”, ISSP of BAS - Eotvos L. University, Hungary “Interaction of defects generated by ion implantation and other high energy irradiations in Si/SiO 2 structures”, ISSP of BAS – Rossendorf Research Center, Germany