A Fast-Hopping Single-PLL 3-Band MB-OFDM UWB Synthesizer Remco C. H. van de Beek, Member, IEEE, Domine M. W. Leenaerts, Fellow, IEEE, and Gerard van der.

Slides:



Advertisements
Similar presentations
RF Transmitters Architectures for Integration and Multi-Standard Operation Terry Yao ECE 1352.
Advertisements

Why Not Go Directly to Digital in Cellular Radios, and Connect the A/D to the Antenna? Paul C. Davis (Retired from Bell Labs)
1 A Low Power CMOS Low Noise Amplifier for Ultra-wideband Wireless Applications 指導教授 : 林志明 學生 : 黃世一
CS 350 Chapter-12 Wireless Technologies. Wireless Agencies & Standards AgencyPurposeWeb Site Institute of Electrical and Electronics Engineers (IEEE)
© 2007 Cisco Systems, Inc. All rights reserved.ICND1 v1.0—3-1 Wireless LANs Exploring Wireless Networking.
Wireless Computer Networking Melanie Hanson May 6, 2002.
Wireless Networks and Spread Spectrum Technologies.
Mehdi Alimadadi, Samad Sheikhaei, Guy Lemieux, Shahriar Mirabbasi, Patrick Palmer University of British Columbia (UBC) Vancouver, BC, Canada A 3GHz Switching.
A FULLY INTEGRATED MOS-C CURRENT-MODE IF FILTER FOR BLUETOOTH by Hussain Alzaher Electrical Engineering Department King Fahd University of Petroleum &
Polar Loop Transmitter T. Sowlati, D. Rozenblit, R. Pullela, M. Damgaard, E. McCarthy, D. Koh, D. Ripley, F. Balteanu, I. Gheorghe.
1 High Speed Fully Integrated On-Chip DC/DC Power Converter By Prabal Upadhyaya Sponsor: National Aeronautics and Space Administration.
An Integrated Solution for Suppressing WLAN Signals in UWB Receivers LI BO.
A Wideband Low Power VCO for IEEE a
Paper Presentation Wi-Fi (802.11b) and Bluetooth: Enabling Coexistence Jim Lansford, Ron Nevo, and Brett Monello CSC8900 Presented by: Tu Tran.
学术报告 A Low Noise Amplifier For 5.2GHz Application Using 0.18um CMOS 蔡天昊
Jin-Shyan Lee, Yu-Wei Su, and Chung-Chou Shen
A Dynamic GHz-Band Switching Technique for RF CMOS VCO
ECE1352F University of Toronto 1 60 GHz Radio Circuit Blocks 60 GHz Radio Circuit Blocks Analog Integrated Circuit Design ECE1352F Theodoros Chalvatzis.
Trends In Unlicensed Spread Spectrum Devices Presentation at FCC Commission Meeting May 10, 2001 Office of Engineering and Technology Federal Communications.
Wireless RF Receiver Front-end System – Wei-Liang Chen Wei-Liang Chen Wireless RF Receiver Front-end System Yuan-Ze University, VLSI Systems Lab
University of Toronto (TH2B - 01) 65-GHz Doppler Sensor with On-Chip Antenna in 0.18µm SiGe BiCMOS Terry Yao, Lamia Tchoketch-Kebir, Olga Yuryevich, Michael.
1 Low Phase Noise Oscillators for MEMS inductors Sofia Vatti Christos Papavassiliou.
BY MD YOUSUF IRFAN.  GLOBAL Positioning System (GPS) receivers for the consumer market require solutions that are compact, cheap, and low power.  This.
Theoretical Analysis of Low Phase Noise Design of CMOS VCO Yao-Huang Kao; Meng-Ting Hsu; Microwave and Wireless Components Letters, IEEE [see also IEEE.
Presented By Dwarakaprasad Ramamoorthy An Optimized Integrated QVCO for Use in a Clock Generator for a New Globally Asynchronous, Locally Synchronous (GALS)
Mohammad Reza Ghaderi Karkani
Experimental results obtained from a 1.6 GHz CMOS Quadrature Output PLL with on-chip DC-DC Converter Owen Casha Department of Micro & Nanoelectronics University.
EE625 Research Presentation By Ryan Dillon September, 2014.
Seoul National University CMOS for Power Device CMOS for Power Device 전파공학 연구실 노 영 우 Microwave Device Term Project.
New MMIC-based Millimeter-wave Power Source Chau-Ching Chiong, Ping-Chen Huang, Yuh-Jing Huang, Ming-Tang Chen (ASIAA), Shou-Hsien Weng, Ho-Yeh Chang (NCUEE),
RF System On Chip Quadrature VCO Comparison1/12 Fortià Vila VergésUniversitat Politecnica de Catalunya E.T.S.E.T.B. Fortià Vila Vergés 19th June 2007 Introduction.
An Ultra-Wide-Band GHz LNA in 0.18µm CMOS technology RF Communication Systems-on-chip Spring 2007.
Design of a GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, APMC 2005.
1.  Why Digital RF?  Digital processors are typically implemented in the latest CMOS process → Take advantages scaling. (e.g. density,performance) 
S. -L. Jang, Senior Member, IEEE, S. -H. Huang, C. -F. Lee, and M. -H
Microwave Traveling Wave Amplifiers and Distributed Oscillators ICs in Industry Standard Silicon CMOS Kalyan Bhattacharyya Supervisors: Drs. J. Mukherjee.
System parameters and performance CDMA-2000, W-CDMA (UMTS), GSM 900, WLAN a, WLAN b, Bluetooth. By Øystein Taskjelle.
24-July-2007 Wireless Networks. Wireless Technologies Bluetooth, ZigBee & Wireless USB short range communication between devices typically controlled.
ADS Design Guide.
TELECOMMUNICATIONS Dr. Hugh Blanton ENTC 4307/ENTC 5307.
A Ku-Band Interference-Rejection CMOS Low-Noise Amplifier Using Current-Reused Stacked Common-Gate Topology Adviser : Zhi-Ming Lin Postgraduate : Chia-Wei.
Presenter: Chun-Han Hou ( 侯 鈞 瀚)
A CMOS VCO with 2GHz tuning range for wideband applications Speaker : Shih-Yi Huang.
A New RF CMOS Gilbert Mixer With Improved Noise Figure and Linearity Yoon, J.; Kim, H.; Park, C.; Yang, J.; Song, H.; Lee, S.; Kim, B.; Microwave Theory.
Submission doc.: /0929r00 Jim Lansford(CSR), et al Slide 1 Expansion of ac to 6-10GHz Date: Authors: July 2012.
A 90nm CMOS Low Noise Amplifier Using Noise Neutralizing for GHz UWB System 指導教授:林志明 教授 級別:碩二 學生:張家瑋 Chao-Shiun Wang; Chorng-Kuang Wang; Solid-State.
ITRS: RF and Analog/Mixed- Signal Technologies for Wireless Communications Nick Krajewski CMPE /16/2005.
系所:積體電路設計研究所 指導教授:林志明 學生:鄭士豪
A Low-Jitter 8-to-10GHz Distributed DLL for Multiple-Phase Clock Generation Keng-Jan Hsiao and Tai-Cheng Lee National Taiwan University Taipei, Taiwan.
A GHz Fourth-Harmonic Voltage-Controlled Oscillator in 130nm SiGe BiCMOS Technology Yang Lin and David E. Kotecki Electrical and Computer Engineering.
A 1-V 2.4-GHz Low-Power Fractional-N Frequency Synthesizer with Sigma-Delta Modulator Controller 指導教授 : 林志明 教授 學生 : 黃世一 Shuenn-Yuh Lee; Chung-Han Cheng;
Architecture of an infrastructure network Distribution System Portal 802.x LAN Access Point LAN BSS LAN BSS 1 Access Point STA.
September 2013doc.: IEEE DiscussionJinyoung Chun, LG Electronics Project: IEEE P Working Group for Wireless Personal Area Networks.
An Ultra-low Voltage UWB CMOS Low Noise Amplifier Presenter: Chun-Han Hou ( 侯 鈞 瀚 ) 1 Yueh-Hua Yu, Yi-Jan Emery Chen, and Deukhyoun Heo* Department of.
MMIC design activities at ASIAA Chau-Ching Chiong, Ping-Chen Huang, Yuh-Jing Huang, Ming-Tang Chen (ASIAA), Ho-Yeh Chang (NCUEE), Ping-Cheng Huang, Che-Chung.
An Oscillator Design Based on Bi-CMOS Differential Amplifier Using Standard SiGe Process Cher-Shiung Tsai, Ming-Hsin Lin, Ping-Feng Wu, Chang-Yu Li, Yu-Nan.
A Tail Current-Shaping Technique to Reduce Phase Noise in LC VCOs 指導教授 : 林志明 教授 學 生 : 劉彥均 IEEE 2005CUSTOM INTEGRATED CIRCUITS CONFERENCE Babak Soltanian.
Jinna Yan Nanyang Technological University Singapore
1 1.3 V low close-in phase noise NMOS LC-VCO with parallel PMOS transistors Moon, H.; Nam, I.; Electronics Letters Volume 44, Issue 11, May Page(s):676.
WiMedia Alliance
Doc.: IEEE a Submission November 2003 B.Gaucher IBMSlide 1 Project: IEEE P Working Group for Wireless Personal Area Networks.
1 PD Loop Filter 1/N Ref VCO Phase- Locked Loop LO.
Rakshith Venkatesh 14/27/2009. What is an RF Low Noise Amplifier? The low-noise amplifier (LNA) is a special type of amplifier used in the receiver side.
Outline Abstract Introduction Bluetooth receiver architecture
Integrated Phased Array Systems in Silicon
Chien-Feng Lee, Sheng-Lyang Jang, Senior Member, IEEE, and M. -H
A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique Microwave and Wireless Components Letters, IEEE Volume 17,  Issue.
A 13.5-mW 5-GHz Frequency Synthesizer With Dynamic Divider
TU3E-4 A K-band Low Phase-Noise High-Gain Gm Boosted Colpitts VCO for GHz FMCW Radar applications R. Levinger, O. Katz, J. Vovnoboy, R. Ben-Yishay.
5.8GHz CMOS 射頻前端接收電路 晶片設計實作 5.8GHz CMOS Front-End Circuit Design
Presentation transcript:

A Fast-Hopping Single-PLL 3-Band MB-OFDM UWB Synthesizer Remco C. H. van de Beek, Member, IEEE, Domine M. W. Leenaerts, Fellow, IEEE, and Gerard van der Weide 2015/9/19EE306 RFIC R&F Lab1 Presented by Romi Fan

Abstract A 3-band (mode 1) multiband-OFDM UWB synthesizer implemented in a 0.25-um SiGe BiCMOS process. Crucial in the design is a divide-by-5 frequency divider that generates quadrature signals at a frequency of 528 MHz. The 0.44 mm 2 fully integrated synthesizer consumes 52mW from a 2.7 V supply. Out-of-band spurious tones are below 50 dBc. The measured frequency transition time is well below the required 9.5 ns. 2015/9/19EE306 RFIC R&F Lab2 OFDM : Orthogonal Frequency Division Multiplexing

Outline Introduction Introduction The single-PLL Architecture The single-PLL Architecture ◦ A.Divide-by-1.5 ◦ B.Divide-by-5 Measurements VCO Design VCO Design Conclusion 2015/9/19EE306 RFIC R&F Lab3

2015/9/19EE306 RFIC R&F Lab4 LTCC Low-Temperature Cofired Ceramics SAW Surface Acoustic Wave ISM Industrial Scientific Medical U-NII Unlicensed National Information Infrastructure UWB UltraWideBand BPF Bandpass Filter

2015/9/19EE306 RFIC R&F Lab5 f(t)=A Bcosωtcos(ωt+θ)

Introduction UWB is now becoming an industrial standard in the 3–10 GHz frequency range under IEEE a (WPAN). The multi-band OFDM alliance (MBOA) proposal divides the spectrum into 14 channels (bands) with a spacing of 528 MHz [1], [2] (see Fig. 1), using quadrature phase shift keying (QPSK)- OFDM, where high data rates of up to 480 Mb/s are achieved. 2015/9/19EE306 RFIC R&F Lab6

Introduction 2015/9/19EE306 RFIC R&F Lab7

Introduction To allow co-existence with WLAN applications operating in 2.4 GHz ISM (e.g., IEEE b/g and Bluetooth) and 5 GHz ISM (e.g., IEEE a), spurious tones in or near these frequency ranges should be below 45 dBc and 50 dBc, respectively, to avoid harmful down- conversion of strong out-of-band interferers into the wanted bands. In-band spurious tones should be below 30 dBc to allow co-existence with other UWB systems. 2015/9/19EE306 RFIC R&F Lab8

Introduction [5] D. Leenaerts et al.,“A SiGe BiCMOS 1 ns fast hopping frequency synthesizer for UWB radio,” in IEEE ISSCC Dig. Tech. Papers, 2005,pp. 202–203. PLL&BiCmos performance [6] C.-C. Lin and C.-K. Wang,“A regenerative semi-dynamic frequency divider for mode-1 MB-OFDM UWB hopping carrier generation,” in IEEE ISSCC Dig. Tech. Papers, 2005, pp. 206–207. Dividers [7] A. Ismail and A. Abidi,“A 3.1 to 8.2 GHz direct conversion receiver for MB-OFDM UWB communication,” in IEEE ISSCC Dig. Tech. Papers, 2005, pp. 208–209. BiCmos performance [8] B. Razavi et al.,“A 0.13umCMOS UWBtransceiver,” in IEEE ISSCC Dig. Tech. Papers, 2005, pp. 216– /9/19EE306 RFIC R&F Lab9

Introduction Ref[5] 2015/9/19EE306 RFIC R&F Lab10

Introduction Ref[6] 2015/9/19EE306 RFIC R&F Lab11

Introduction Ref[7] 2015/9/19EE306 RFIC R&F Lab12

Introduction Ref[8] 2015/9/19EE306 RFIC R&F Lab13

Introduction Miller divider Tai-Cheng Lee and Yen-Chuang Huang,“A Miller Divider Based Clock Generator for MBOA-UWB Application,” in Symposium on VLSI Circuits Digest of Technical Papers, 2005, pp. 34– /9/19EE306 RFIC R&F Lab14

The single-PLL Architecture 2015/9/19EE306 RFIC R&F Lab15

The single-PLL Architecture A.Divide-by /9/19EE306 RFIC R&F Lab16

The single-PLL Architecture B.Divide-by /9/19EE306 RFIC R&F Lab17

The single-PLL Architecture B.Divide-by /9/19EE306 RFIC R&F Lab18

The single-PLL Architecture B.Divide-by /9/19EE306 RFIC R&F Lab19

The single-PLL Architecture B.Divide-by /9/19EE306 RFIC R&F Lab20

VCO Design The 7920 MHz LC-oscillator uses an on-chip inductor for low phase noise and power dissipation. The 0.6 nH single-turn differential inductor is realized using the 3 um-thick top metal layer on a deep trench isolation g rid. The VCO consumes 4.8 mA from a 2V on-chip supply regulator. The measured VCO phase noise is -97 dBc/Hz at an offset frequency of 1 MHz. 2015/9/19EE306 RFIC R&F Lab21

VCO Design 2015/9/19EE306 RFIC R&F Lab22

Measurements The synthesizer has been implemented in a 0.25-um SiGe BiCMOS process with an NPN f t of 70 GHz. The synthesizer (excluding the GHz clock generator and the 50 Ω measurement buffers) draws 19.3 mA from a 2.7 V supply (52 mW). The close-in phase noise is below 90 dBc/Hz and the VCO phase noise is below 120 dBc/Hz at 10 MHz offset. 2015/9/19EE306 RFIC R&F Lab23

Measurements 2015/9/19EE306 RFIC R&F Lab24

Measurements 2015/9/19EE306 RFIC R&F Lab25

Measurements 2015/9/19EE306 RFIC R&F Lab26

Conclusion The 52 mW power dissipation is better than other reported BiCMOS solutions and is close to the 45 mW reported for the CMOS concept in [8](105mW). The spurious tones performance of the proposed divide-by-7.5 is better than the one reported in [6] where levels of -20 dBc were reported. The complete design enables co-operability with WLAN/WPAN applications in the 2.4 GHz and 5 GHz frequency bands. 2015/9/19EE306 RFIC R&F Lab27

2015/9/19EE306 RFIC R&F Lab28 IMD-1 Via-1 Metal-1 ILD Contact N & P Well Gate&Gox Plug-2 Metal-2 NMOS PMOS I/O PMOSResistor Core PMOS Core NMOS Capacitor I/O NMOS STI Plug-1

2015/9/19EE306 RFIC R&F Lab29

2015/9/19EE306 RFIC R&F Lab30 Thanks for your attention.