November 2003ECFA-Montpellier 1 Status on CMOS sensors Auguste Besson on behalf of IRES/LEPSI: M. Deveaux, A. Gay, G. Gaycken, Y. Gornushkin, D. Grandjean, S. Heini, A. Himmi, Ch. Hu, H. Souffi-Kebbati, I. Valin, M. Winter, S. Heini, A. Himmi, Ch. Hu, H. Souffi-Kebbati, I. Valin, M. Winter, G. Claus, C. Colledani, G. Deptuch, W. Dulinski (M6/M8 DAPNIA: Y. Degerli, N. Fourches, P. Lutz) Develop. of large CMOS sensors (3-T/pixel) Develop. of large CMOS sensors (3-T/pixel) Caracterization of the technology without epitaxy Caracterization of the technology without epitaxy R&D on fast sensors. R&D on fast sensors schedule and summary 2004 schedule and summary

November 2003A. Besson, ECFA-Montpellier 2 HistoryHistory MIMOSA 1,2,4,5 tested at CERN-SPS with 120 GeV/c  -MIMOSA 1,2,4,5 tested at CERN-SPS with 120 GeV/c  - M6 tests in progressM6 tests in progress M7 available soonM7 available soon SUCESSOR 2 (SUCIMA PROJECT): beam test in 2003SUCESSOR 2 (SUCIMA PROJECT): beam test in 2003  40  m pitch, no epitaxial layer.  2003: M4, M5, M6 tests, M7 fabricated

November 2003A. Besson, ECFA-Montpellier 3 3-T/pixel large CMOS sensors (M5) AMS 0.6  m (M1 like)AMS 0.6  m (M1 like)  reticle size 19.4 x 17.4 mm 2  512 x 512 pixels (/ each of 4 matrices)  17x17  m pitch 4 sub-matrices per sensors, read-out in parallel4 sub-matrices per sensors, read-out in parallel 6 wafers (6’’) built in wafers (6’’) built in wafers thinned down to 120  m (2 in 2003)3 wafers thinned down to 120  m (2 in 2003) 2002 results:2002 results:  Yield %   det ≳ 99%;  sp ~1.7  m;  ~0.2%

November 2003A. Besson, ECFA-Montpellier 4 3-T large sensors: 2003 (2) Beam test at SPS (2003)Beam test at SPS (2003)  3 sensors  120 GeV/c  - Performance uniformity testsPerformance uniformity tests  between sub-matrices, sensors  diode size comparisons Small diode (3x3  m 2 ) Big diode (5x5  m 2 )

November 2003A. Besson, ECFA-Montpellier 5 3-T large sensors: results (3)  submatrices have similar properties  ~1 dead column / 512 (i.e. ~0.2% det inefficiency)  single point resolution ≲ 2.5  m (still improvable) Effect of particle incidenceEffect of particle incidence  chip turned w.r.t. beam direction  charge as expected

November 2003A. Besson, ECFA-Montpellier 6 3-T large sensors: M5-B (4) Mimosa 5-BMimosa 5-B  23 wafers produced in oct Slightly improved fabrication process (metalisation)Slightly improved fabrication process (metalisation)  should reduce dead columns rate.  should improve rate of good chips (yield)  setting up thinning to 15  m (Nov 03) (with a Si wafer on the electronics side for handling)  Application to bio-medical imaging (20-30 keV e - )

November 2003A. Besson, ECFA-Montpellier 7 3-T large sensors: application (5) STAR: extension of the Vertex Detector (2006)STAR: extension of the Vertex Detector (2006)  charm physics  small radius, granular and thin detector  2 pixel layers  ≳ 1000 cm 2 R (layer 1) ≳ 2 cm ; R (layer 2) ≲ 4 cm ;  M5 performances are close to the STAR requirements  started a collaboration with LBL (and BNL)  first MIMO⋆1 prototype in summer 2004 (new TSMC 0.25  m tech.) What to improve ? What to improve ? read out time (~ 24 ms) read out time (~ 24 ms) sensor thickness (~ 120  m) sensor thickness (~ 120  m) electronic noise (room T) electronic noise (room T) yield (not crucial) yield (not crucial) Requirements Requirements  pt ~ 3  m  pt ~ 3  m 2.6 kRad/year 2.6 kRad/year n eq /cm 2 /year n eq /cm 2 /year read out time ms read out time ms Power ≲ 100 mW/cm 2 Power ≲ 100 mW/cm 2 sensor thickness ≳ 50  m sensor thickness ≳ 50  m Room temperature Room temperature

November 2003A. Besson, ECFA 8 No epitaxial layer prototypes (M4) Properties:Properties:  AMS 0.35  m witout epitaxial layer. Low doped substrate  increases  e  120 GeV/c  - SPS beam tests Eff ≳ 99.5 % resolution  sp ~2,5  m (new)  Fabrication processes with epitaxial layer is not mandatory ! epitaxial layer is not mandatory !

November 2003A. Besson, ECFA-Montpellier 9 No epitaxial layer (M4) (2) Rad. tol. studies :Rad. tol. studies :  200 kRad (x-rays),  n eq /cm 2 S/N ↘ when T ↗S/N ↘ when T ↗ If T ≲ 20⁰C  no obvious effects on efficiency and spatial resolution If T ≲ 20⁰C  no obvious effects on efficiency and spatial resolution Radiation effects are negligible at this level (200 kRad ;1.4x10 11 n/cm 2 )Radiation effects are negligible at this level (200 kRad ;1.4x10 11 n/cm 2 )

November 2003A. Besson, ECFA-Montpellier 10 No epi. : SUCCESSOR 2 SUCCESSOR 2: (M4 like)SUCCESSOR 2: (M4 like)  bio-medical imaging, SUCIMA project.  (no epi. layer, AMS 0.35  m)  40x40  m 2 pixels  beam tests (oct. 2003)  different sub-structures tested (3T pixel, Self-Bias pixels with 2 different diode sizes)(3T pixel, Self-Bias pixels with 2 different diode sizes)  eff ≳ 99.9 %   sp ~5-6  m (~2 x M4 with 20  m pitch)  best performances for large diodes SB SB1 Charge (1,9,25 pixels) Noise vs T S/N vs T X resolution vs T ?

November 2003A. Besson, ECFA-Montpellier 11 R&D on fast sensors M1-M5  1M pixels read-out in 1-10 msM1-M5  1M pixels read-out in 1-10 ms FLC  1 st VD layer must be read-out in  s (beamstrahlung)FLC  1 st VD layer must be read-out in  s (beamstrahlung)  potentially tremendous data flow: e.g. 15 bits/pixels, t~25  s  500 Gbits/s/10 6 pixels !  main goal: fast signal treatment AND data compression integrated in the sensor Fast // read out of short columnsFast // read out of short columns Different prototypes with different signal treatment:Different prototypes with different signal treatment:  M6 (with DAPNIA): tests in 2003,  individual pixels and discri work fine, but large spread of pixel caracteristics (pedestal, noise, gain ?)  M7: available soon, tests in  M8 (with DAPNIA): submitted in Nov., tests in 2004

November 2003A. Besson, ECFA-Montpellier 12 SummarySummary Large sensors (M5) (1M pixels, AMS 0.6  m )Large sensors (M5) (1M pixels, AMS 0.6  m )  ready to be used for a real detector  2 nd fabrication (23 wafers) with a better yield expected  thinning down to 15  m in progress  application to extension of STAR Vertex detector in 2006 No epitaxial layer sensors (M4, SUC 2)No epitaxial layer sensors (M4, SUC 2)  validated for m.i.p. detection (eff ≳ 99.5%,  sp ~2,5  m)  fits industrial CMOS fabrication tendancy Fast response sensors (M6, M7, M8)Fast response sensors (M6, M7, M8)  studies: fab. techno., charge collection system, signal treatment architecture  read out speed, efficiency, zero sup., power diss. etc. 2003/2004 schedule2003/2004 schedule  M5-B tests  yield, thinning  M⋆1  available in summer 2004, tests in autumn  fast sensors: 2 prototypes  M7 and M8 tests  charge collection studies  ionising radiation tol.