P-N Junctions Physical aspects of pn junctions Mathematical models Depletion capacitance Breakdown characteristics Basis for other devices Circuit Symbol + V -
PHYSICAL ASPECTS OF THE PN JUNCTION
P-N Junctions N-type N D P-type N A
P-N Junctions N-type N D P-type N A
P-N Junctions N-type N D P-type N A Depletion Layer or Region
P-N Junctions N-type N D P-type N A Depletion Layer or Region Charge Density qN D -qN A
P-N Junctions N-type N D P-type N A Depletion Layer or Region Charge Density qN D -qN A Band Diagram
Electrostatics in PN Junction Charge Density qN D -qN A x Q = x
Electrostatics in PN Junction Charge Density qN D -qN A x x Electric Field Gauss' Law in 1 Dimension: Electric Field = Q / Q = x
Electrostatics in PN Junction V bi = Built in Voltage Charge Density qN D -qN A x x x Electric Field Electron Potential Gauss' Law in 1 Dimension: Electric Field = Q / Q = x
Why is this the Equilibrium Condition? V bi = built-in voltage = kT ln ( ) NANDNAND ni2ni2
Why is this the Equilibrium Condition? V bi = built-in voltage = kT ln ( ) NANDNAND ni2ni2 Too much V bi Too little V bi
P-N Junctions --- Diodes N-type N D P-type N A First-Principles Model
P-N Junctions --- Diodes N-type N D P-type N A First-Principles Model
P-N Junctions --- Diodes N-type N D P-type N A First-Principles Model Diode voltage (V) Diode current (nA)
P-N Junctions --- Diodes N-type N D P-type N A First-Principles Model
Applying Voltage to a Diode - V + FPFP FNFN Forward Bias
Applying Voltage to a Diode - V ++ V - FPFP FNFN FNFN FPFP Forward Bias Reverse Bias
Capacitance in pn Junctions
Diode voltage (V) Capacitance (fF) C j0
Breakdown Voltage
Caused by Avalanche Multiplication Due to reaching a critical electric field