Reliable HICUM implementation in Eldo Mohamed Selim Device Modeling Team Mentor Graphics HICUM Workshop, June. 2004.

Slides:



Advertisements
Similar presentations
Ray Nicanor M. Tag-at, Lloyd Henry Li
Advertisements

P-n Junction Diode.
SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 1 Evaluation of HiCUM for Modeling DC, S-parameter and.
R. van Langevelde, A.J. Scholten Philips Research, The Netherlands
Chapter 9. PN-junction diodes: Applications
1 LHCb CALO commissioning meeting Anatoli Konoplyannikov /ITEP/ Proposal of the ECAL CW base modification + Anatoli, Michail ( Michail Soldatov.
CADENCE CONFIDENTIAL Hicum Model in Spectre Diana Moncoqut, R&D manager June 4, 2004.
Événement - date SWIM’09, Jun 10 th -11 th, /30 Design of a Robust Controller for Guaranteed Performances: Application to Piezoelectric Cantilevers.
1 Slides taken from: A.R. Hambley, Electronics, © Prentice Hall, 2/e, 2000 A. Sedra and K.C. Smith, Microelectronic Circuits, © Oxford University Press,
Applications Team Sensing Products
Characterisation and Reliability testing of THz Schottky diodes. By Chris Price Supervisor: Dr Byron Alderman December 2006 Preliminary.
Waveform-Shaping Circuits
EE105 Fall 2007Lecture 5, Slide 1Prof. Liu, UC Berkeley Lecture 5 OUTLINE BJT (cont’d) – Transconductance – Small-signal model – The Early effect – BJT.
1 ELE1110D Basic Circuit Theory Tutorial 6 Diode Circuits By Xu Ceng SHB 832.
The Devices: Diode Once Again. Si Atomic Structure First Energy Level: 2 Second Energy Level: 8 Third Energy Level: 4 Electron Configuration:
Electronic Instrumentation Experiment 6: Diodes * Part A: Diode I-V Characteristics * Part B: Rectifiers Part C: PN Junction Voltage Limitation Part D:
ECE 663 AC Diode Characteristics Resistor network supplies DC bias set point Capacitor provides AC signal input V out =I diode R3 R3.
MICROWAVE SOLID STATE DEVICES FARIHA AB. HAMED MARZADILAHIKMAH MOHAMAD NOR SAEMI WAN NADIRAH ROSLI
Low Noise Amplifier. DSB/SC-AM Modulation (Review)
Impedance Spectroscopy Study of an SOFC Unit Cell
Diodes Analog Electronics UNIT III. Diodes UNIT I Objective The student will use diodes, capacitors, regulators and LEDs through a rectifying system in.
Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Operation of PN junctions:
COMSATS Institute of Information Technology Virtual campus Islamabad
Lecture 3 Introduction to Electronics Rabie A. Ramadan
EE 348: Lecture Supplement Notes SN2 Semiconductor Diodes: Concepts, Models, & Circuits 22 January 2001.
S. FREGONESE 19 juin 2004 HICUM WORKSHOP /25 Scalable bipolar transistor modelling with HICUM L0 S. Frégonèse, D. Berger *, T. Zimmer, C. Maneux,
Small Signal Model PNP Transistor Section ,4.6.
Large Part Of This Lecture is Taken From Manipal Institute India
Application of HICUM and TRADICA at JazzSemi 2002 BCTM HICUM User’s Meeting.
Small Signal Model PNP Transistor Section 4.4. BJT in the active region Electrons cross the forward biased BE junction and are swept reverse biased BC.
BJT (cont’d). OUTLINE – Transconductance – Small-signal model – The Early effect – BJT operation in saturation mode Reading: Chapter
Chapter 4 Bipolar Junction Transistors
Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar IC technology:
Miller-OTA Opamp design
Lecture 27 OUTLINE The BJT (cont’d) Small-signal model Cutoff frequency Transient (switching) response Reading: Pierret 12; Hu
3/19/2016 Subject Name: LINEAR IC’s AND APPLICATIONS Subject Code:10EC46 Prepared By: Kumutha A Department: Electronics and Communication Date:
1 UNIT –V Signal Generators and Waveform- Shaping Circuits.
Diode Circuit Analysis
ITM UNIVERSE,VADODARA ELECTRONIC DEVICES & CIRCUITS TOPIC NAME TRANSISTOR BIASING (DC ANALYSIS) PREPARED BY: NAME: Dilsha Dharmajan Electronics & communication.
BJT Circuits Chapter 5 Dr.Debashis De Associate Professor
LECTURE 1: BASIC BJT AMPLIFIER -AC ANALYSIS-
CHAPTER 2 Forward Biased, DC Analysis AC Analysis Reverse Biased
Condition Monitoring for Power Electronics Reliability (COMPERE)
Recall Last Lecture Biasing of BJT Three types of biasing
Bipolar Junction Transistor Circuit Analysis
EKT104 ANALOG ELECTRONIC CIRCUITS [LITAR ELEKTRONIK ANALOG] BASIC BJT AMPLIFIER (PART I) DR NIK ADILAH HANIN BINTI ZAHRI
Recall Last Lecture Biasing of BJT Three types of biasing
Lecture 4 Bipolar Junction Transistors (BJTs)
Lecture 10 Bipolar Junction Transistor (BJT)
Bipolar Junction Transistors (BJTs)
Power Semiconductor Systems I
ENEE 303 1st Discussion.
7 pn Junction Diode: Small-signal Admittance
7 pn Junction Diode: Small-signal Admittance
Reading: Finish Chapter 12
Professor Ronald L. Carter
Transistor Characteristics
Lecture 27 OUTLINE The BJT (cont’d) Small-signal model
Lecture 26 OUTLINE The BJT (cont’d) Ideal transistor analysis
Lecture 28 OUTLINE The BJT (cont’d) Small-signal model
Bipolar Junction Transistor
HICUM evaluation Cedric Pujol – Analog and Mixed Signal Flows
Lecture 25 OUTLINE The BJT (cont’d) Ideal transistor analysis
Lecture 25 OUTLINE The BJT (cont’d) Ideal transistor analysis
Lecture 26 OUTLINE The BJT (cont’d) Ideal transistor analysis
Introduction to Small Signal Model
Small Signal Model Section 4.4.
Status of HICUM integration in circuit simulators
DC Biasing Circuits.
Frequency response I As the frequency of the processed signals increases, the effects of parasitic capacitance in (BJT/MOS) transistors start to manifest.
Presentation transcript:

Reliable HICUM implementation in Eldo Mohamed Selim Device Modeling Team Mentor Graphics HICUM Workshop, June. 2004

Copyright © , Mentor Graphics. 2 HICUM in Eldo, June 2004 Overview n HICUM status in Eldo. n Stability issues in the standard model. n Enhancements done to improve stability. n Current work done. n Conclusion.

Copyright © , Mentor Graphics. 3 HICUM in Eldo, June 2004 Status n Model implemented since 1999 in Eldo v5.3_1.1. n The model accuracy was reviewed versus DEVICE simulator and some major accuracy issues had been resolved in Eldo v5.8_1.1, released n In the 2001 workshop, ST presented a comparison between different commercial simulators showing that Eldo had the best implementation of the model for the DC results. n Since then, no modifications were done in the standard model, hence in Eldo just minor bug fixes were done.

Copyright © , Mentor Graphics. 4 HICUM in Eldo, June 2004 Stability Issues n Currents, Charges and their derivatives (conductances and capacitances) are needed from model for proper simulation for all types of analysis; DC, AC and TRANSIENT. n Convergence problems were seen using the standard model implemented in Eldo due to missing or incorrect derivatives (from the numerical point of view). n The standard model focuses on DC and small signal behavior mainly, many derivatives were not taken into account.

Copyright © , Mentor Graphics. 5 HICUM in Eldo, June 2004 Stability Issues n 4 Major points of instability exist: — Self heating derivatives. — Diffusion capacitance modeling. — NQS model. — RBI dependencies. n Some modifications in the existing derivatives were done and some derivatives were added to the standard model in Eldo to enhance the stability. n In the following slide a summary of the work done will be presented.

Copyright © , Mentor Graphics. 6 HICUM in Eldo, June 2004 Enhancements n Diode junction currents derivatives w.r.t. self heating (thermal) voltage. n Avalanche current derivative w.r.t. self heating (thermal) voltage. n RBI derivatives w.r.t. VBE and VCE. n Changing the expression for CDCI calculation. n Adding the new derivative of QDEI w.r.t. VCEI. n Applying the NQS effect on all derivatives of ITF (forward transfer current) and QDEI (base emitter depletion charge).

Copyright © , Mentor Graphics. 7 HICUM in Eldo, June 2004 Enhancements n These added features are added in AMS release corresponding to Eldo v6.3_2.1. n A new parameter called AMSVER is added. n It can take 2 values. — > Standard AC results are maintained. — > AC results are changed (default). n For both values of AMSVER, the newly added derivatives are always used used to enhance convergence for DC and TRANSIENT analysis.

Copyright © , Mentor Graphics. 8 HICUM in Eldo, June 2004 Enhancements 1e12H 0.01F 0.5v DC 1.0v DC V1 = 1mv AC Temp = 27 FREQ = 10MHz, 100MHz, 1 GHz, 10 GHz AC setup I2

Copyright © , Mentor Graphics. 9 HICUM in Eldo, June 2004 Enhancements 1e12H 0.01F 0.5v DC 1.0v DC V1 = sinusoidal source with peak value 1mv, frequency = FREQ Temp = 27 FREQ = 10MHz, 100MHz, 1 GHz, 10 GHz TRANSIENT setup I2

Copyright © , Mentor Graphics. 10 HICUM in Eldo, June 2004 Enhancements n From the results the AC values with AMSVER = match those obtained from the TRANSIENT analysis and they are both different from the standard AC results with AMSVER = n All the testcases that showed convergence problems are working fine with the new modifications.

Copyright © , Mentor Graphics. 11 HICUM in Eldo, June 2004 Current Work n We are currently enhancing the speed of the HICUM model in Eldo. n This will be available in the AMS release.

Copyright © , Mentor Graphics. 12 HICUM in Eldo, June 2004 Conclusion n AMS (Eldo v6.3_2.1) which was released few weeks ago has a fully stable HICUM model with NO convergence issues. n AMS (Eldo v6.4_1.1) planned to be released by the end of the year will have the speed enhanced version of the model. n MG is always looking to keep the models in the very best shape from both accuracy compared to standard models point of view and model speed.

Copyright © , Mentor Graphics. 13 HICUM in Eldo, June 2004