High Speed 64kb SRAM ECE 4332 Fall 2013 Team VeryLargeScaleEngineers Robert Costanzo Michael Recachinas Hector Soto.

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Presentation transcript:

High Speed 64kb SRAM ECE 4332 Fall 2013 Team VeryLargeScaleEngineers Robert Costanzo Michael Recachinas Hector Soto

Outline Problem Design Approach & Choices Circuit Block Architecture Novelties Layout Simulations & Metrics Future Work

Problem Portable Instruments Company (PICo) desires SRAM for a new mobile node o High Speed 64kb cache, or o 2 Mb Low Power SRAM Team VLSE’s problem: o First priority: delay o Seek to also minimize area, power, and energy

Design Approach Architecture Level o Pareto Curve  32-Blocks Carr D., Park J., Reyno D. “A High Speed 64kb SRAM Cache in 45nm Technology” (2010)

Final Schematic Pins Decoders Block 0Block

Block Diagram

Block Level Transmission gates o AND, MUXes, etc.

Bit Cell Level Traditional design

Bit Cell Level γ = I SA I SD LDWALDWA WDLAWDLA = I cell < γ I SD I cell > γ+1 I SD I cell > γ+1 γ I SA I cell < I SA Pass Gate PDN NMOS All equations and images on this page are from Ding-Ming Kwai & IP Library Company

Bit Cell Level Carr D., Park J., Reyno D. “High Speed Cache” Powerpoint Presentation to PICo (2010) Desire: small area & stable Q Reality: only need to get below V M, don’t need to get below V T We ended up with a cell ratio of 1.2 and Pull-up ratio of 1.11, following Carr et al.’s (2010) successful design choices as well

Device Level W/L determined by sweeping and using previously mentioned ratios o PMOS: 180n o NMOS: 240n o Pass Gate: 200n Compared to previous years, industry standard, etc. o Short Answer: bigger

Novelties Latching Voltage Sense Amplifier Stacked Transmission Gate Decoders

Sense Amplifier Differential ECE410 Chapter 13 Lecture at Michigan State Pros Easy to implement Dynamic Low Power Cons Dynamic Main Idea: BL > BLB: Output = high BL < BLB: Output = low ΔV BL = I cell Δt / C BL

Latching Voltage Sense Amplifier Pros ~23% Faster Reads* o Therefore, ~23% smaller ΔV Low power Cons More FETs/Larger area Ryan, J. F., & Calhoun, B. H. “Minimizing offset for latching voltage- mode sense amplifiers for sub-threshold operation” (2008) *Based on 2011 Team 1 measurement

Layout Note: No taps are present in the layout We attempted to optimize area as well Clutter

6T Cell Layout μm 2.16 μm

2x2 Cell Layout

Block Layout μm μm

Block with Peripherals 69.63μm x μm

Sense Amp ●Differential Voltage Latching Sense Amplifier ●Messy, Cluttered

Transmission Gate ●Versatile, Used in most of the peripherals ●Helpful with other layouts

32b Decoder Layout

64b Decoder Layout

Testbench ●Simulation setup for SRAM ○Reads and Writes ●To emulate conditions seen in full array: ○Recreate worst case paths ■For both inputs and outputs

Simulation Results PRECHARGE WORDLINE READ WRITE Q QB DATA OUT

Metrics Our GroupComparison to Team XOR (2010) Total Metric1.024 x J · s 2 · mm 2 · WBetter by 882% 1 Bitcell Area2.3 μm 2 Worse by 130% Total Area mm 2 Worse by 22% Total Energy nJWorse by 20% Read Delay0.54 nsBetter by 63% Write Delay0.11 nsBetter by 58% Total Delay0.54 nsBetter by 63% Idle Power.0698 WBetter by 41%

Future Refinement SKILL and OCEAN Carr D., Park J., Reyno D. “A High Speed 64kb SRAM Cache in 45nm Technology” (2010) Move further on the Pareto curve Predecoding Error Correcting Code Vectorize signals Ultra-thin Layout

& Team XOR (2010), Team 2 (2010), Team 1 (2011), and many others! Dr. Benton Calhoun, PICo liaison Aatmesh Shrivastava, PICo liaison University of Virginia Divya Akella We also acknowledge and offer good luck to Team Innovation! Acknowledgments

Questions? ಠ _ ಠ

References [All pictures are cited in their captions] Calhoun, B., Design Principles for Digital CMOS Integrated Circuits, (March 7, 2012) L. Hamouche and B. Allard, “Low power options for 32nm always-on SRAM architecture,” Solid State Electronics, Mann, R., and B. Calhoun, "New category of ultra-thin notchless 6T SRAM cell layout topologies for sub-22nm", ISQED, Rabaey, J., Chandrakasan A., Nikolic, B., Digital Integrated Circuits (2nd Edition), (Dec 24, 2002) Rabaey, J. Digital Integrated Circuits: A Design Perspective. Prentice Hall, Ryan, J. F., & Calhoun, B. H. Minimizing Offset for Latching Voltage Mode Sense Amplifiers for Sub-Threshold Operation. 9th International Symposium on Quality Electronic Design, Wang, A., Calhoun, B. H., & Chandrakasan, A. P. Sub-Threshold Design for Ultra Low-Power Systems. Springer, Previous Groups from ECE 4332 VLSI Design at University of Virginia (e.g. 2009, 2010, 2011, 2012)