EE130/230A Discussion 15 Peng Zheng 1. Early Voltage, V A Output resistance: A large V A (i.e. a large r o ) is desirable IB3IB3 ICIC V EC 0 IB2IB2 IB1IB1.

Slides:

Advertisements

Similar presentations

BIJUNCTION TRANSISTOR

Advertisements

Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

Gain medium Incoherent Light Coherent Light ECE 663 Transistor/switch/amplifier – a 3 terminal device Source Drain Gate Valve Artery Vein Emitter Collector.

ECE340 ELECTRONICS I BIPOLAR JUNCTION TRANSISTOR.

Chapter 5 Bipolar Junction Transistors

Chapter 4 Bipolar Junction Transistor

Spring 2007EE130 Lecture 20, Slide 1 Lecture #20 OUTLINE pn Junctions (cont’d) – small-signal model – transient response turn-off Reading: Chapters 7,

Spring 2007EE130 Lecture 26, Slide 1 Lecture #26 OUTLINE Modern BJT Structures –Poly-Si emitter –Heterojunction bipolar transistor (HBT) Charge control.

Bipolar Junction Transistors EE314. Chapter 13: Bipolar Junction Transistors 1.History of BJT 2.First BJT 3.Basic symbols and features 4.A little bit.

Spring 2007EE130 Lecture 23, Slide 1 Lecture #23 QUIZ #3 Results (undergraduate scores only, N = 39) Mean = 22.1; Median = 22; Std. Dev. = High =

EE105 Fall 2007Lecture 6, Slide 1Prof. Liu, UC Berkeley Lecture 6 OUTLINE BJT (cont’d) – PNP transistor (structure, operation, models) BJT Amplifiers –

EE105 Fall 2007Lecture 5, Slide 1Prof. Liu, UC Berkeley Lecture 5 OUTLINE BJT (cont’d) – Transconductance – Small-signal model – The Early effect – BJT.

EE105 Fall 2011Lecture 6, Slide 1Prof. Salahuddin, UC Berkeley Lecture 6 OUTLINE PN Junction Diodes – Reverse Breakdown – Large and Small signal models.

Slide 8-1 Chapter 8 Bipolar Junction Transistors Since 1970, the high density and low-power advantage of the MOS technology steadily eroded the BJT’s early.

Spring 2007EE130 Lecture 27, Slide 1 Lecture #27 OUTLINE BJT small signal model BJT cutoff frequency BJT transient (switching) response Reading: Finish.

Chapter 4 – Bipolar Junction Transistors (BJTs)

EE105 Fall 2007Lecture 4, Slide 1Prof. Liu, UC Berkeley Lecture 4 OUTLINE Bipolar Junction Transistor (BJT) – General considerations – Structure – Operation.

Lecture #25 OUTLINE BJT: Deviations from the Ideal

Department of EECS University of California, Berkeley EECS 105 Fall 2003, Lecture 14 Lecture 14: Bipolar Junction Transistors Prof. Niknejad.

EE130/230A Discussion 13 Peng Zheng 1. Why New Transistor Structures? Off-state leakage (I OFF ) must be suppressed as L g is scaled down – allows for.

Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

EE130/230A Discussion 11 Peng Zheng.

ENE 311 Lecture 10.

Chapter 6: Bipolar Junction Transistors

© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 41 Other Modes of BJT Operation; Common-Emitter Gain So far we’ve studied BJT only.

Lecture 13 OUTLINE pn Junction Diodes (cont’d) Charge control model

EE130/230A Discussion 7 Peng Zheng.

Recall Lecture 8 Clipper – Step 1: Find the clip value by doing KVL at the output branch – Step 2: Set the conditions to know whether diode is on or off.

EXAMPLE 10.1 OBJECTIVE Solution

Large Part Of This Lecture is Taken From Manipal Institute India

Lecture 26 OUTLINE The BJT (cont’d) Breakdown mechanisms Non-ideal effects Gummel plot & Gummel numbers Modern BJT structures Base transit time Reading:

Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

ECE 663 Plans What does MCDE give us for the gain? How can we use the equation to improve the gain? Can we develop a compact circuit model for a BJT?

EE130/230A Discussion 14 Peng Zheng.

EE130/230A Discussion 6 Peng Zheng.

Lecture 24 OUTLINE The Bipolar Junction Transistor Introduction BJT Fundamentals Reading: Pierret 10; Hu 8.1.

TRANSISTOR - Introduction BIPOLAR JUNCTION TRANSISTOR (BJT)

EE 5340 Semiconductor Device Theory Lecture 22 - Fall 2010

Semiconductor Device Physics

Lecture 27 OUTLINE The BJT (cont’d) Small-signal model Cutoff frequency Transient (switching) response Reading: Pierret 12; Hu

Lecture 11 OUTLINE pn Junction Diodes (cont’d) – Narrow-base diode – Junction breakdown Reading: Pierret 6.3.2, 6.2.2; Hu 4.5.

Lecture 14 OUTLINE pn Junction Diodes (cont’d)

BJT Static Characteristics

Lecture 25 OUTLINE The Bipolar Junction Transistor Introduction

Chapter 10 BJT Fundamentals. Chapter 10 BJT Fundamentals.

Lecture 10 OUTLINE pn Junction Diodes (cont’d)

Lecture 13 OUTLINE pn Junction Diodes (cont’d) Charge control model

Lecture 27 OUTLINE The BJT (cont’d) Breakdown mechanisms

Electron-hole pair generation due to light

Reading: Finish Chapter 12

BJT Static Characteristics

Chapter 8 Bipolar Junction Transistors

Lecture 26 OUTLINE The BJT (cont’d) Breakdown mechanisms

Lecture 27 OUTLINE The BJT (cont’d) Breakdown mechanisms

Lecture #25 OUTLINE BJT: Deviations from the Ideal

Lecture 27 OUTLINE The BJT (cont’d) Small-signal model

Lecture 24 OUTLINE The Bipolar Junction Transistor Introduction

Semiconductor Device Physics

Lecture 26 OUTLINE The BJT (cont’d) Ideal transistor analysis

Lecture 28 OUTLINE The BJT (cont’d) Small-signal model

EE130/230A Discussion 5 Peng Zheng.

Lecture 25 OUTLINE The Bipolar Junction Transistor Introduction

Lecture 25 OUTLINE The BJT (cont’d) Ideal transistor analysis

Lecture 25 OUTLINE The BJT (cont’d) Ideal transistor analysis

Lecture 10 OUTLINE pn Junction Diodes (cont’d)

Lecture 26 OUTLINE The BJT (cont’d) Ideal transistor analysis

BJT Static Characteristics

Lecture 12 OUTLINE pn Junction Diodes (cont’d)

Lecture 13 OUTLINE pn Junction Diodes (cont’d) Charge control model

Lecture 12 OUTLINE pn Junction Diodes (cont’d)

Presentation transcript:

EE130/230A Discussion 15 Peng Zheng 1

Early Voltage, V A Output resistance: A large V A (i.e. a large r o ) is desirable IB3IB3 ICIC V EC 0 IB2IB2 IB1IB1 VAVA

Punch-Through E-B and E-B depletion regions in the base touch  W = 0 As |V CB | increases, the potential barrier to hole injection decreases and hence I C increases EE130/230A Fall 2013 Lecture 27, Slide 3 R. F. Pierret, Semiconductor Device Fundamentals, Figs

Gummel Plot and  dc vs. I C  dc From top to bottom: V BC = 2V, 1V, 0V  dc EE130/230A Fall 2013 Lecture 27, Slide 4 C. C. Hu, Modern Semiconductor Devices for Integrated Circuits, Figures 8-8 & 8-9

Gummel Numbers For a uniformly doped base with negligible band-gap narrowing, the base Gummel number is (total integrated “dose” (#/cm 2 ) of majority carriers in the base, divided by D B ) Emitter efficiency G E is the emitter Gummel number EE130/230A Fall 2013 Lecture 27, Slide 5

Notice that In practice, N B and N E are not uniform, i.e. they are functions of x The more general formulas for the Gummel numbers are EE130/230A Fall 2013 Lecture 27, Slide 6

Charge Control Model A PNP BJT biased in the forward-active mode has excess minority-carrier charge Q B stored in the quasi-neutral base: In steady state, EE130/230A Fall 2013 Lecture 27, Slide 7

Base Transit Time,  t time required for minority carriers to diffuse across the base sets the switching speed limit of the transistor EE130/230A Fall 2013 Lecture 27, Slide 8

Small-Signal Model Transconductance: Common-emitter configuration, forward-active mode: “hybrid pi” BJT small signal model: EE130/230A Fall 2013 Lecture 28, Slide 9 R. F. Pierret, Semiconductor Device Fundamentals, Fig.12.1(a)

Small-Signal Model (cont.) where Q F is the magnitude of minority-carrier charge stored in the base and emitter regions forward transit time EE130/230A Fall 2013 Lecture 28, Slide 10

Summary: BJT Small Signal Model Hybrid pi model for the common-emitter configuration, forward-active mode: EE130/230A Fall 2013 Lecture 28, Slide 11

Thanks very much for your continuous support throughout the semester. 12 Good luck to the final exam!