Contrast Properties of Electron Beam Resist Ahmed Al Balushi.

Slides:



Advertisements
Similar presentations
PROCESSOR QA.
Advertisements

X-ray lithography (XRL) 1.Overview and resolution limit. 2.X-ray source ( electron impact and synchrotron radiation). 3.X-ray absorption and scattering.
X-ray lithography (XRL) 1.Overview and resolution limit. 2.X-ray source ( electron impact and synchrotron radiation). 3.X-ray absorption and scattering.
Chris A. Mack, Fundamental Principles of Optical Lithography, (c) 2007
Quality Assurance and Digital Radiography
Limits and Derivatives
Chris A. Mack, Fundamental Principles of Optical Lithography, (c) Figure 7.1 Development rate plot of the original kinetic model as a function of.
ECE/ChE 4752: Microelectronics Processing Laboratory
Paul Evenson, Waraporn Nuntiyakul,
Double Exposure/Patterning Lithography Hongki Kang EE235 Mar
Study of the fragmentation of Carbon ions for medical applications Protons (hadrons in general) especially suitable for deep-sited tumors (brain, neck.
CREATING SILICON NANOSTRUCTURES WITH CONTROLLABLE SIDEWALL PROFILES BY USING FLUORINE-ENHANCED OXIDE PASSIVATION Sensing and Actuation in Miniaturized.
1 Microfabrication Technologies Luiz Otávio Saraiva Ferreira LNLS
X-Ray Production & Emission
Proximity Effect in EBL Jian Wu Feb. 11, Outline Introduction Physical and quantitative model of proximity effect Reduction and correction of proximity.
NANO-ELECTRO-MECHANICAL SYSTEM(NEMS)
NANOSCALE LITHOGRAPHY MICHAEL JOHNSTON 4/13/2015.
Microfabrication Nathaniel J. C. Libatique, Ph.D.
Ion Beam Lithography Using Membrane Masks
Lithographic Processes
Image Characteristics. What is an image? Dictionary meaning An optical appearance An optical appearance A form of semblance A form of semblance A mental.
Functions and Models 1. Exponential Functions 1.5.
Chapter 3, Section 2 Organizing the Elements
LIMITS AND DERIVATIVES
Slope Have you ever been skiing or seen it on television? What is the difference between the beginner’s trail (bunny slope) and the expert’s trail (black.
NANOMETER SCALE LITHOGRAPHY DANIEL BERNARD – BENJAMEN STROBELAPRIL 29, 2013 EE 4611 – STANLEY G. BURNS NANOMETER SCALE LITHOGRAPHY, ALSO KNOWN AS NANOLITHOGRAPHY,
Motivation IC business requires a sub 100 nm Next Generation Lithography tool. –(100 nm for 16GDRAM) Any of the following 4 major candidates are not prevailing.
Center for Materials for Information Technology an NSF Materials Science and Engineering Center Nanolithography Lecture 15 G.J. Mankey
Elsevier items and derived items © 2009 by Mosby, Inc., an affiliate of Elsevier Inc. X-Ray Emission Chapter 9.
Proximity Effect in Electron Beam Lithography
E-Beam Lithography Antony D. Han Chem 750 U of Waterloo
Proximity Effect 游明峰. 1 What is the proximity effect? 2 Proximity Effect Correction 3 Conclusion 4 Reference Outline.
Proximity Effect in EBL by: Abhay Kotnala January 2013
GRAPHING AND RELATIONSHIPS. GRAPHING AND VARIABLES Identifying Variables A variable is any factor that might affect the behavior of an experimental setup.
Radiographic Quality Visibility and Sharpness
Proximity Effect in EBL by: Zeinab Mohammadi November 2011
SPATIAL RESOLUTION OF NON- INVASIVE BEAM PROFILE MONITORBASED ON OPTICAL DIFFRACTION RADIATION A.P. Potylitsyn Tomsk Polytechnic University, , pr.
SU-8 is a polymer EPON SU-8
Developing Positive Negative Etching and Stripping Polymer Resist Thin Film Substrate Resist Exposing Radiation Figure 1.1. Schematic of positive and negative.
Mixing and Entrainment in the Orkney Passage Judy Twedt University of Washington Dept. of Physics NOAA, Geophysical Fluid Dynamics Lab Dr. Sonya Legg Dr.
Photo lithography. Why? Add a photo sensitive layer ontop of a material. After treating with UV light, remove the affected areas. After processing (e.g.
Electron scattering in resist and substrate Proximity effect Resist interactions (positive /negative/chemically amplified resists, resist contrast) Dose.
Motion Along a Straight Line Chapter 3. Position, Displacement, and Average Velocity Kinematics is the classification and comparison of motions For this.
Speaker: Shiuan-Li Lin Advisor : Sheng-Lung Huang
1 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL EUV Resist Evaluation ExCite T406 and More Moore, SP3 WP6, Objective: Evaluation.
INTRODUCTION A multiphysics across-the-channel model is presented for the anode of a liquid-feed Direct Methanol Fuel Cell (DMFC). The model considers.
EE412 Deep Trench Spray Coating Final Presentation Karthik Vijayraghavan Mentor : Jason Parker 12/08/
Date of download: 7/9/2016 Copyright © 2016 SPIE. All rights reserved. Schematics of a 2-θ angular scatterometry configuration. Figure Legend: From: Physical.
Process technology. Process Technology 2 MMIC-HEMT, ETH Zürich Electrical nm contacts, Uni Basel Luft InP 70 nm DFB Laser, WSI München Applications: Nano.
Date of download: 9/20/2016 Copyright © 2016 SPIE. All rights reserved. Top view of the studied mask and the splitting strategy for the investigated LELE.
INTERACTION OF PARTICLES WITH MATTER
CHAPTER 3 Describing Relationships
André Lubeck; Dr. Gihad Mohamad; Dr. Fonseca, Fernando Soares; PhD.
Electron-beam lithography with the Raith EBPG
Electron-beam lithography with the Raith EBPG
photopatterned SU-8 layers
Electron-beam lithography with the Raith EBPG
Applications of the Derivative
MAPPING THE EARTH.
A B C Supplementary Figure S1. Trabectedin decreases viability of primary MPM cell cultures. A and B, dose-dependent impact of trabectedin on epithelioid.
Represents inherent density of the film base, plus expected fog.
Minami Ito, Gerald Westheimer, Charles D Gilbert  Neuron 
Proximity correction in electron beam lithography
LITHOGRAPHY Lithography is the process of imprinting a geometric pattern from a mask onto a thin layer of material called a resist which is a radiation.
Personalized Medicine: Patient-Predictive Panel Power
3.2 – Least Squares Regression
Rate of Change and Slope
Secondary Emission Update
Presentation transcript:

Contrast Properties of Electron Beam Resist Ahmed Al Balushi

Overview Resist materials – Sensitivity – Contrast Development curves Resist contrast Conclusion Q&A

Resist Materials Important properties of resist are: – Sensitivity – Contrast  Linked to resolution capability of resist

Sensitivity and contrast are derived from a resist development curves Resist A has higher sensitivity Resist A has higher contrast

Development Curves development curves, also called contrast curves, are obtained by exposure and development of a series of large square patterns with different exposure doses The remaining resist thickness is measured against the exposure dose, which generates the development curves

Resist Contrast Resist contrast is defined by the slope of a development curve and expressed as: where – D 1 is the exposure dose at which the resist is fully exposed – D 0 is the exposure dose at which the resist starts to be exposed The steeper the slope, the higher the resist contrast

Resist Contrast The steeper the slope is, the higher the resist contrast. Resist contrast is an inherent property of a resist material. However, development conditions can have some influence on it.

Development curves of HSQ negative-tone resist exposed at different e-beam energies Contrast curve of SU-8 resist

Resist contrast By the appearance of contrast curves of these two resists, one can immediately tell that the HSQ resist has higher contrast. The contrast of negative-tone resist HSQ is 2.8 Another negative-tone resist, SU-8, has a contrast of only 0.92, as measured from contrast curve shown in the figure

Resist Contrast Apart from measuring the slope of resist contrast curves, another direct way of judging the resist contrast is to observe the resist profile after development. High contrast resist

Resist contrast High contrast is always desirable because: It enables resist profiles after development to have vertical sidewalls and high aspect ratios – Facilitate pattern transfer – Enable lithography of high density patterns

Thank You Q&A