Thickening Rate of SiO 2 半導體專題實驗期末報告 第十組 電機四 B 許恭銓 電機四 B 王彥翔

The diamond structure of Si 2

Planes that are concerned 3

Actual Photographs  100  110  111 4

Molecular arrangements 5

Molecular density  (100):  (110):  (111):  Thus here the molecular density is (110) > (100) > (111) 6

Si crystal orientation 7

Si crystal orientation (cont.) 8

Distance between layers  (100):  (110):  (111):  Hence the distance between two layers: (110) > (111) > (100)  Thus if the oxidation rate on each plane, concerning the molecular density, is not the dominant factor, the rate of thickening the oxide should be fastest for plane (110). 9

Paper research  “Journal of The Electrochemical Society”  Silicon Orientation Effects in the Initial Regime of Wet Oxidation  absServlet?prog=normal&id=JESOAN F &idtype=cvips&gifs =yes absServlet?prog=normal&id=JESOAN F &idtype=cvips&gifs =yes 10

Paper research  Silicon Orientation Effects in the Initial Regime of Wet Oxidation  J. Electrochem. Soc., Volume 149, Issue 8, pp. F98-F101 (August 2002)  Julie L. Ngau, a Peter B. Griffin, b and James D. Plummer b Julie L. NgauPeter B. GriffinJames D. Plummer  a Department of Materials Science and Engineering and  b Department of Electrical Engineering, Stanford University, Stanford, California

Paper research  Atmospheric pressure, wet oxidation, ~785 degrees Celsius  Initially, (110) > (111) > (100). Eventually, (111) > (110) > (100). 12

Paper research  The upper figure depicts the overall information in the experiment.  The lower figure shows the result of the first 150 minutes in the experiment. 13