Introduction The traditional method for actuating microengineered structures using PZT has been to use bulk PZT bonded to the structure in question. Work.

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Introduction The traditional method for actuating microengineered structures using PZT has been to use bulk PZT bonded to the structure in question. Work at Southampton has been progressing towards being able to replace this bonded transducer with a screen printed equivalent[1]. In the past, the piezoelectric activity available from screen printed PZT has been much lower than the bulk material, but recent developments in both material composition [2] and device structure have allowed a screen printed structure to deliver powers equivalent to bulk devices. Description of Actuator The actuating mechanism is manufactured by co-firing several layers of PZT at 890 degrees Centigrade, each separated by an electrode layer. Several test devices were constructed, these consisting of either 1, 2 or 3 PZT layers, printed onto a ceramic substrate. Figure 1: Structure of a 3 layer construction Figure 1 shows a three layer structure. The PZT paste is formulated within the department [2]. The electrodes are thick-film gold. The structure requires polarisation and this was achieved by applying a 4MV/m field at 150 degrees C for 30 minutes. Advantages of a Multi-layer Structure The main advantage in producing a multilayered structure as shown in figure 1 is that it enables larger displacements to be generated than would be possible with a single layer of the the same total thickness, effectively increasing the d 33 coefficient. In addition, layering the structure allows lower absolute voltages to generate the required polarising field strength. Figure 2 shows how a two layer structure is connected and polarised. It can be seen that for a given applied voltage there is twice the movement as for 1 layer. This is an effective increase in the d 33 coefficient of 100%. This comes about because effectively twice the actual voltage is being applied as compared with a single double thickness layer. Figure 2: Comparison of displacement for a 1 layer and a 2 layer structure. Va is the applied voltage A PZT MULTILAYER THICK-FILM ACTUATOR FOR ULTRASONIC APPLICATIONS N.R.Harris 1, R.N. Torah 1, N.M.White 1, M.Hill 2,S.P. Beeby 1 1 ECS, Southampton University, UK; 2 SES, Southampton University, UK; Experimental Results Conclusions It is concluded that multilayer thick-film transducers can perform better than bulk PZT transducers structures, in terms of conversion efficiency of electrical to acoustic energy, when used as the drive elements for certain microsystems. Moreover, they are attractive in MEMS type applications, especially microfluidics, as they are easier to produce in wafer scale processes, as they are printed rather than individually bonded, as is the case with traditional bulk PZT elements. Acknowledgements The authors with to thank the Engineering and Physical Research Council (EPSRC) for their financial support under grant number GR/R13333/01, and acknowledge the Financial support given by Dstl and Microfiltrex Ltd. Special thanks are due to Angela Cotton in the Medical Physics department at Southampton General Hospital for the use of the power balance. References [1] Maas, R., Koch, M., Harris, N.R., White, N.M., Evans, A. G. R. Thick-film Printing of PZT onto Silicon Materials Letters 31 (1997) pp [2] R.N.Torah,S.P.Beeby,N.M.White Improving the piezoelectric properties of thick- film PZT: the influence of paste composition, powder milling process and electrode material. Sensors and Actuators A 110 (2004) pp  m 60  m 0 +Va Displacement = d (m/V) x 30  m x Va /30  m(V/m)/m x 2 layers Displacement = d (m/V) x 60  m x Va /60  m(V/m) = 2.d.Va = d.Va Measurements Direct piezoelectric coefficient measurements were taken using a Take Control PM35 Direct acoustic power output was measured using an Ohmic Instruments UPM-DT-1 power balance Input electrical power was calculated using the following: Figure 4: Power measurements and calculations for bulk and a 2 layer device Table 1: A Summary of key measurements Figure 3: Input energy calculation and circuit model