Introduction to spin-polarized ballistic hot electron injection and detection in silicon by Ian Appelbaum Philosophical Transactions A Volume 369(1951):3554-3574.

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Introduction to spin-polarized ballistic hot electron injection and detection in silicon by Ian Appelbaum Philosophical Transactions A Volume 369(1951): September 28, 2011 ©2011 by The Royal Society

Spin-dependent band diagram showing the electrochemical potentials near the interface of a metallic FM (high conductivity and short spin lifetime) with a semiconductor (low conductivity and long spin lifetime). Ian Appelbaum Phil. Trans. R. Soc. A 2011;369: ©2011 by The Royal Society

Schematic of a TJ used as a source for ballistic hot electron injection into a semiconductor conduction band. Ian Appelbaum Phil. Trans. R. Soc. A 2011;369: ©2011 by The Royal Society

Schematic band diagram of a four-terminal (two for TJ injection and two for FM semiconductor– metal–semiconductor detection) ballistic hot electron injection and detection device with a 350 μm thick Si transport layer. Ian Appelbaum Phil. Trans. R. Soc. A 2011;369: ©2011 by The Royal Society

In-plane magnetic field measurements show the ‘spin-valve’ effect and can be used to calculate the spin polarization after transport. Ian Appelbaum Phil. Trans. R. Soc. A 2011;369: ©2011 by The Royal Society

(a) A typical spin precession measurement shows the coherent oscillations owing to drift and the suppression of signal amplitude (‘dephasing’) as the precession frequency rises. Ian Appelbaum Phil. Trans. R. Soc. A 2011;369: ©2011 by The Royal Society

(a) Fitting the normalized spin signal from in-plane spin-valve measurements to an exponential decay model using transit times derived from spin precession measurements at variable internal electric field yields measurement of spin lifetimes in undoped bulk... Ian Appelbaum Phil. Trans. R. Soc. A 2011;369: ©2011 by The Royal Society

Evolution of a Delta function spin distribution (Green's function) injected on the left side at the time increments shown, with drift velocity 106 cm s−1, diffusion coefficient 100 cm2 s−1 and absorbing boundary conditions at the detector (x=100 μm). Ian Appelbaum Phil. Trans. R. Soc. A 2011;369: ©2011 by The Royal Society

Depletion-approximation conduction-band diagrams of a 3.3 μm thick n-type (7.2×1014 cm−3) doped Si spin-transport layer with an injector–detector voltage drop of 3 V (where the transport is dominated by diffusion against the electric field at the detector s... Ian Appelbaum Phil. Trans. R. Soc. A 2011;369: ©2011 by The Royal Society