KIT – University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association Institut für Experimentelle Kernphysik www.kit.edu.

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Presentation transcript:

KIT – University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association Institut für Experimentelle Kernphysik First CCE and TCT measurements on irradiated diodes of the CMS-HPK-Campaign Robert Eber A. Dierlamm, Th.Müller, W. de Boer, P. Steck, Th. Pöhlsen (HH), Ch. Scharf (HH)

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT Outline Setups and Groups Preparation for TCT and CCE measurements Stability measurements Backside measurements with 880nm Comparison of FZ / MCz material Charge Collection of non-irradiated diodes CCE of irradiated diodes TCT of irradiated diodes Trapping times Conclusion and Outlook

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT Setups for CCE and TCT measurements Institutes involved in diode measurements CERN, Hamburg, Louvain, Karlsruhe

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT Specifications of CCE / TCT measurements CCE measurements Measurement of charge collection, simulation of a MIP Integrated signal important TCT measurements Time resolved curves Observation of 1 charge carrier through the diode Needed for trapping times and electric field Lasers: >1000nm for CCE Red for TCT (~680nm) 880nm for backside TCT Laser intensity < 100 MIPs Repetition rate 200Hz Min. 5GS/s Oscilloscope Averaging of waveforms > 500 Measurement steps: 0V-1000V in 10V steps No breakdown Non-irradiated diodes 20°C, 0°C, -20°C Irradiated diodes 0°C, (-10°C), -20°C, (-30°C) Several annealing steps

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT Backside measurements Backside TCT measurements not possible on thin diodes because of deep diffusion Signal generation possible in 320µm thick FZ diodes 200µm MCz diodes Due to relatively deep backside implantation and backside properties on FZ diodes – generation of charge carriers not possible with red Laser (680nm) on FZ IR Laser light shot an FZ backside generates only ~20% of frontside signal MCzFZ

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT Backside measurements Red Laser works well for MCz diodes Not a deep implantation on the backside – different processing Back/front charge collection ~ 80% For comparison, FZ material with a physical thickness of 200µm is ordered and will arrive in autumn this year

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT Backside measurements Use 880nm Laser for illumination on the backside for FZ material Signal looks almost like a red one Possibility to look at one charge carrier in FZ 320µm material At low voltages Broad signal coming from diffusion out of the deep diffusion region At higher voltages Long tails at the end of signal First small peak in signal due to electrons (n-type diode) Useful for analysis? Wavelength [nm] Penetration depth [µm]

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT CCE measurement of unirradiated diodes Signal generation with infrared Laser (1055nm) Because of indirect bandgap in silicon, fewer charge carriers are produced Calibrate signal for different temperatures Red Laser always generates the same amount of charge carriers when shot on frontside (irradiated diode example) 320µm, n-type diode

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT CCE measurement of unirradiated diodes Signal generation with infrared Laser (1055nm) CCE normalized to the 320µm thick diode of same type Slight increase in CCE(V) seen for 200µm and 120µm thick diodes Gain more acitve thickness due to deep diffusion at high voltages Charge collection ratio in expected range 63% for 200µm, (67% for 215µm) 38% for 120µm, (45% for 145µm)

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT Charge collection on different wafers Taking into account Attenuation length of laser Measured thickness from CV Deviations of max. 5% from mean value Collected charge compared on different types of wafers. [1] [1]

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT CCE measurement of irradiated diodes Deviations in charge collection between small and large diodes negligible After irradiation Almost same charge collection seen between L and S Different irradiation step – same Charge collection V dep

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT CCE measurements of irradiated diodes Proton irradiated p-spray diodes reach 100% charge collection after irradiation Differences in charge collection of FZ200µm seen Not same diode, different active thickness (not corrected) 120µm Higher electric fields - Gain even more active thickness after irradiation KA HH

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT CCE measurement of irradiated diodes Comparison of 320µm thick diodes at T=0°C Irradiation: F(p) = 1.1*10 14 n eq /cm 2, F(n) = n eq /cm 2 Annealing: V dep

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT CCE measurements of irradiated diodes Some diodes showed variation measuring several times - remeasure Different Setups at HH / KA in quite good agreement when normalized to 320µm thick diode Different Annealing! KA: HH: Errors ±5% [F] = n eq /cm 2

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT TCT measurements on irradiated diodes TCT measurements Signal shape of irradiated diodes Red Laser (680nm) Here: Large 320µm n-type diodes Very nice double peak for n-type diodes (electrons) Time resolution should improve with small diodes (lower capacitance)

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT TCT measurements on irradiated diodes Red Laser shot on frontside of diodes Trapping times calculated with charge correction method (CCM) Annealing: ~50h at RT Expection reference: [4] e- in n-type diodes holes in p-type diodes front

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT Summary and conclusions First irradiation of diodes successful (neutrons, protons, F=10 14 n eq /cm 2 ) Comparability of setups in last step (CCE) quite good Beginning investigations on TCT curves Trapping times: electrons fit to expected values, holes do not More investigation necessary Thin devices Define method in the diode group to get trapping times (probably not CCM) Outlook First standard irradiation of the CMS-HPK-Campaign soon More irradiations and additional irradiation steps for diodes More materials involved in next irradiations: FZ, MCz, Epi Start comparison of CCE of different materials, bulk dopings and mixed irradiation scenarios

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT THANK YOU FOR YOUR ATTENTION!

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT References [1] Diode meeting, April 24th 2011, Thomas Pöhlsen; Institut für Experimentalphysik, Universität Hamburg. [2] Sensor upgrade meeting, Feb. 17th 2011, Georg Steinbrück, Thomas Pöhlsen; Institut für Experimentalphysik, Universität Hamburg. [3] Measurements of irradiated diodes, Christian Scharf; Institut für Experimentalphysik, Universität Hamburg. [4] G. Kramberger et al., Nuclear Instruments and Methods in Physics Research A 481, 2002,

RD50 Meeting Liverpool – 25. May 2011 Robert Eber Institut für Experimentelle Kernphysik, KIT CCE measurement of unirradiated diodes Collected charge: deposited charge in depleted volume + outdiffusing charge deposited in undepleted volume Neglecting diffusion Q ~ depletion width ~ 1/C CCE determined with IR Laser from frontside No corrections for reflections or absorption CCE measurements confirm CV measurements qualitatively CV and CC measurements are compared with respect to differences between Diode_1 and Diode_2 of the same wafer Source: [2] 1/C [1/F], Q[a.u.]