Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. ECE 255: Electronic Analysis and Design Prof. Peide (Peter) Ye Office: Birck Tel: Course Location: Physics 223 Time: MWF 12:30-1:20 pm Office Hour: MWF 1:30-2:30 pm

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Prerequisites: EE 201 Basic circuit analysis including Ohm’s and Kirchoff’s Laws, loop and nodal analysis, Thevenin and Norton equivalents, sinusoidal forcing functions, phasors, impedance and Admittance Course Description: Diode, bipolar transistor, and FET circuit models for design and analysis of electronic circuits. Single and multistage analysis and design; introduction to digital circuits. Computer aided design calculations, amplifier operating point design, and frequency response of single and multistage amplifiers. High frequency and low frequency designs are emphasized.

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Course Grading Exam 1: 15% Exam 2: 15% Exam 3: 15% Final Exam: 50% HW and Spice: 5%

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Chapter 1 Microelectronic Circuit Design Richard C. Jaeger Travis Blalock Fourth Edition

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. The Start of the Modern Electronics Era Bardeen, Shockley, and Brattain at Bell Labs - Brattain and Bardeen invented the bipolar transistor in The first germanium bipolar transistor. Roughly 50 years later, electronics account for 10% (4 trillion dollars) of the world GDP.

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Evolution of Electronic Devices Vacuum Tubes Discrete Transistors SSI and MSI Integrated Circuits VLSI Surface-Mount Circuits

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Figure 1.4

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Figure 1.5

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Figure 1.6

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Figure 1.7

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Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. The Inventors of the Integrated Circuit Jack Kilby Andy Grove, Robert Noyce, and Gordon Moore with Intel 8080 layout.

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. The Kilby Integrated Circuit Semiconductor die Active device Electrical contacts

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Solid-State Electronic Materials Electronic materials fall into three categories: –InsulatorsResistivity (  ) > 10 5  -cm –Semiconductors <  < 10 5  -cm –Conductors  <  -cm Elememental semiconductors are formed from a single type of atom, typically Silicon. Compound semiconductors are formed from combinations of column III and V elements or columns II and VI. Germanium was used in many early devices. Silicon quickly replaced silicon due to its higher bandgap energy, lower cost, and is easily oxidized to form silicon- dioxide insulating layers.

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Semiconductor Materials (cont.) Semiconductor Bandgap Energy E G (eV) Carbon (diamond)5.47 Silicon1.12 Germanium0.66 Tin0.082 Gallium arsenide1.42 Gallium nitride3.49 Indium phosphide1.35 Boron nitride7.50 Silicon carbide3.26 Cadmium selenide1.70

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Covalent Bond Model Silicon diamond lattice unit cell. Corner of diamond lattice showing four nearest neighbor bonding. View of crystal lattice along a crystallographic axis.

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Silicon Covalent Bond Model (cont.) Near absolute zero, all bonds are complete. Each Si atom contributes one electron to each of the four bond pairs. Increasing temperature adds energy to the system and breaks bonds in the lattice, generating electron-hole pairs.

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Intrinsic Carrier Concentration The density of carriers in a semiconductor as a function of temperature and material properties is: E G = semiconductor bandgap energy in eV (electron volts) k = Boltzmann’s constant, 8.62 x eV/K T = absolute termperature, K B = material-dependent parameter, 1.08 x K -3 cm -6 for Si Bandgap energy is the minimum energy needed to free an electron by breaking a covalent bond in the semiconductor crystal.

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Intrinsic Carrier Concentration (cont.) Electron density is n (electrons/cm 3 ) and n i for intrinsic material n = n i. Intrinsic refers to properties of pure materials. n i ≈ cm -3 for Si Intrinsic carrier density (cm -3 )

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Electron-hole concentrations A vacancy is left when a covalent bond is broken. The vacancy is called a hole. A hole moves when the vacancy is filled by an electron from a nearby broken bond (hole current). Hole density is represented by p. For intrinsic silicon, n = n i = p. The product of electron and hole concentrations is pn = n i 2. The pn product above holds when a semiconductor is in thermal equilibrium (not with an external voltage applied). Homework: Chapter 1 and Chapter 2, in particular,