Korea Institute of Geoscience and Mineral Resources (KIGAM) Thin Film Analysis by Ion Beam Techniques W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim Thin Film Analysis by Ion Beam Techniques W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim
Korea Institute of Geoscience and Mineral Resources (KIGAM) Characteristics of MeV Ion Beam Analysis Nondestructive Absolute, quantitative High sensitivity Depth profiling in the first micron Light element detection (ERDA, NRA, PIGE) Ultra high sensitive isotope measurement Versatile External Beam available
Korea Institute of Geoscience and Mineral Resources (KIGAM) RBS vs TOF-ERDA
Korea Institute of Geoscience and Mineral Resources (KIGAM) Tandem Accelerator in KIGAM
Korea Institute of Geoscience and Mineral Resources (KIGAM) Multipurpose chamber for RBS & TOF-ERD
Korea Institute of Geoscience and Mineral Resources (KIGAM) Rutherford Backscattering Spectrometry (RBS) Semiconductors Superconductors Optical films Material science
Korea Institute of Geoscience and Mineral Resources (KIGAM) BN on Si TOF-ERDA
Korea Institute of Geoscience and Mineral Resources (KIGAM) Electrolytic Li-Ni-V-O(H)/Si (1000 A) RBS resultTOF-ERD result
Korea Institute of Geoscience and Mineral Resources (KIGAM) Thick 600 atoms/ cm 2 (22.56 g/cm 2, ~ 440 A) Element Areal density Atomic ratio Areal density Mass ratio (10 15 atoms/ cm 2 ) (%) ( g/cm 2 ) (%) H Li O Ar V Ni
Korea Institute of Geoscience and Mineral Resources (KIGAM) Electrolytic Si-P-N-O-Li on Si (2000 A) RBS resultTOF-ERD result
Korea Institute of Geoscience and Mineral Resources (KIGAM) Thick 3500 atoms/ cm 2 (87.59 g/cm 2, ~ 1600 A) Element Areal density Atomic ratio Areal density Mass ratio (10 15 atoms/ cm 2 ) (%) ( g/cm 2 ) (%) H Li C N O Si P Pt
Korea Institute of Geoscience and Mineral Resources (KIGAM) Active layer of TFT and PDP display Ru on Si (300 A) RBS resultTOF-ERD result
Korea Institute of Geoscience and Mineral Resources (KIGAM) Thick 270 atoms/ cm 2 (42.27 g/cm 2, ~ 340 A) Element Areal density Atomic ratio Areal density Mass ratio (10 15 atoms/ cm 2 ) (%) ( g/cm 2 ) (%) H C Ru
Korea Institute of Geoscience and Mineral Resources (KIGAM) Dielectric layer of semiconductor Ru - O on Si (300 A) RBS resultTOF-ERD result
Korea Institute of Geoscience and Mineral Resources (KIGAM) Layer 1 Thick 50 atoms/ cm 2 (3.37 g/cm 2, ~ 30 A) Element Areal density Atomic ratio Mass density Mass ratio (10 15 atoms/ cm 2) (%) ( g/cm 2 ) (%) H C O Ru Layer 2 Thick 150 atoms/ cm 2 (19.22 g/cm 2, ~ 160 A) Element Areal density Atomic ratio Mass density Mass ratio (10 15 atoms/ cm 2 ) (%) ( g/cm 2 ) (%) H C O Ru
Korea Institute of Geoscience and Mineral Resources (KIGAM) Neutron generation target Ti- 3 H on Cu, 3 H(p,n) 3 He RBS result (before H irradiation) TOF-ERD result (film composition)
Korea Institute of Geoscience and Mineral Resources (KIGAM) Temperature variation of target with H irradiation RBS result (after H irradiation)
Korea Institute of Geoscience and Mineral Resources (KIGAM) Areal density of Ti (atom/cm 2 ) Areal density of 3 H (atom/cm 2 ) Before irradiationAfter irradiation Cal. by neutron cross section Maker data 1.4 x x x x x x x 10 18
Korea Institute of Geoscience and Mineral Resources (KIGAM) Conclusion RBS and TOF-ERD are mutually assistant in analysis from light elements to heavy elements Electrolytic films in which composition of light elements is important were analyzed It was found that Ru film can be a good dielectric film by introducing small amount of oxygen Nitrogen and oxygen were observed in a titanium tritide target and the results reduced error of neutron cross section measurement Cu migration during proton irradiation was also observed by RBS measurement in spite of cooling by freon circulation Ion beam analysis techniques are very successfully applied to many fields of thin film studies