Higher order effects Channel Length Modulation Body Effect Leakage current.

Slides:

Advertisements

Similar presentations

MICROWAVE FET Microwave FET : operates in the microwave frequencies

Advertisements

Common-Gate (Base) Amplifier and Cascode Circuits

by Alexander Glavtchev

Leakage in MOS devices Mohammad Sharifkhani.

University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 1 Review of MOSFET Device Modeling.

VLSI Design Lecture 3a: Nonideal Transistors. Outline Transistor I-V Review Nonideal Transistor Behavior Velocity Saturation Channel Length Modulation.

Design and Implementation of VLSI Systems (EN1600) Lecture08 Prof. Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Weste/Addison.

Introduction to CMOS VLSI Design Lecture 15: Nonideal Transistors David Harris Harvey Mudd College Spring 2004.

MOSFETs Monday 19 th September. MOSFETs Monday 19 th September In this presentation we will look at the following: State the main differences between.

Introduction to CMOS VLSI Design Lecture 19: Nonideal Transistors

Introduction to CMOS VLSI Design MOS Behavior in DSM.

VLSI Design Lecture 3a: Nonideal Transistors

CSCE 612: VLSI System Design Instructor: Jason D. Bakos.

Reading: Finish Chapter 6

Introduction to CMOS VLSI Design Nonideal Transistors.

Microelectronics Circuit Analysis and Design Donald A. Neamen

Modern VLSI Design 3e: Chapter 2 Copyright  1998, 2002 Prentice Hall PTR Topics n Derivation of transistor characteristics.

EE 466: VLSI Design Lecture 03.

Lecture 2 Chapter 2 MOS Transistors. Voltage along the channel V(y) = the voltage at a distance y along the channel V(y) is constrained by the following.

Effects of Variation on Emerging Devices for Use in SRAM

© Digital Integrated Circuits 2nd Devices Device Dr. Shiyan Hu Office: EERC 731 Adapted and modified from Digital Integrated Circuits: A.

Modern VLSI Design 4e: Chapter 2 Copyright  2009 Prentice Hall PTR Topics n Derivation of transistor characteristics.

Introduction to FinFet

Modern VLSI Design 3e: Chapter 2 Copyright  1998, 2002 Prentice Hall PTR Topics n Derivation of transistor characteristics.

Qualitative Discussion of MOS Transistors. Big Picture ES230 – Diodes – BJT – Op-Amps ES330 – Applications of Op-Amps – CMOS Analog applications Digital.

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE122 – Lab 7 MOSFET Parameters.

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE122 – Lab 7 MOSFET Parameters.

DMT121 – ELECTRONIC DEVICES

CSCE 613: Fundamentals of VLSI Chip Design Instructor: Jason D. Bakos.

Junction Capacitances The n + regions forms a number of planar pn-junctions with the surrounding p-type substrate numbered 1-5 on the diagram. Planar junctions.

Chapter 2 MOS Transistors. 2.2 STRUCTURE AND OPERATION OF THE MOS TRANSISTOR.

HW (Also, use google scholar to find one or two well cited papers on symmetric models of MOSFET, and quickly study them.)

Chapter 12 : Field – Effect Transistors 12-1 NMOS and PMOS transistors 12-2 Load-line analysis of a simple NMOS amplifier 12-3 Small –signal equivalent.

Leakage reduction techniques Three major leakage current components 1. Gate leakage ; ~ Vdd 4 2. Subthreshold ; ~ Vdd 3 3. P/N junction.

VLSI System Design Lect. 2.2 CMOS Transistor Theory2 Engr. Anees ul Husnain ( Department of Electronics.

Introduction to MOS Transistors Section Selected Figures in Chapter 15.

Device EE4271 VLSI Design Dr. Shiyan Hu Office: EERC 518

Introduction to MOS Transistors Section Outline Similarity Between BJT & MOS Introductory Device Physics Small Signal Model.

Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 11: September 22, 2014 MOS Transistor.

EE 466/586 VLSI Design Partha Pande School of EECS Washington State University

© Digital Integrated Circuits 2nd Devices Device Dr. Shiyan Hu Office: EERC 731 Adapted and modified from Digital Integrated Circuits: A.

Damu, 2008EGE535 Fall 08, Lecture 21 EGE535 Low Power VLSI Design Lecture #2 MOSFET Basics.

The NFET explained… in only a few confusing slides.

Introduction to MOS Transistors

Fig. 6 from Effects of trap-assisted tunneling on gate-induced drain leakage in silicon–germanium channel p-type FET for scaled supply voltages (Image.

RTL Simulator for VChip 1999/11/11 이재곤. RTL Simulator for VChip  현재 상황 Compiled-code 로 변환 중  VBS 의 내장된 obj 파일을 이용하려 하였으나 제 대로 구현되어 있지 않음  Obj 파일 :

UNIT II : BASIC ELECTRICAL PROPERTIES

Chapter 2 MOS Transistors.

DMT 241 – Introduction to IC Layout

VLSI design Short channel Effects in Deep Submicron CMOS

Lecture 20 OUTLINE The MOSFET (cont’d) Qualitative theory

by Alexander Glavtchev

積體電路元件與製程半導體物理半導體元件 PN junction CMOS 製程 MOS 元件.

INTRODUCTION: MD. SHAFIQUL ISLAM ROLL: REGI:

Lecture on Field Effect Transistor (FET) by: GEC Bhavnagar

741 Op-Amp Where we are going:.

Tunnel field-effect transistor

Digital Integrated Circuits 10: Short-Channel MOSFETs

Reading: Finish Chapter 17,

Digital Integrated Circuits 11: MOS Transistor Design and Modeling

Qualitative Discussion of MOS Transistors

ELEC 6970: Low Power Design Class Project By: Sachin Dhingra

Last Lecture – MOS Transistor Review (Chap. #3)

Lecture 20 OUTLINE The MOSFET (cont’d) Qualitative theory

EXAMPLE 7.1 BJECTIVE Determine the total bias current on an IC due to subthreshold current. Assume there are 107 n-channel transistors on a single chip,

Defining LER and Defect Specifications

Lecture 20 OUTLINE The MOSFET (cont’d)

Lecture 20 OUTLINE The MOSFET (cont’d)

Lecture 4: Nonideal Transistor Theory

Lecture 4: Nonideal Transistor Theory

Presentation transcript:

Higher order effects Channel Length Modulation Body Effect Leakage current

Body Effect – The threshold voltage is a function of Vsb Gate Source Drain n+ p-type Body

Leakage Current For some chips as much as 50% of the power consumption stems from leakage current – current when transistors are OFF

There are different kinds of leakage current (current when the transistor is OFF) There are different kinds of leakage current: Gate current – tunneling through the gate RB leakage current Subthreshold current (equation is similar to that for a BJT) S Vd n+ Vgs p