Simulation of Proton Beam High-Aspect-Ratio Micro / Nano Machining E. Valamontes 1, 2, M. Chatzichristidi 3, C. Potiriadis 4, D. Kotsiampasis 3, D. Niakoula.

Slides:



Advertisements
Similar presentations
J. Pozimski-FETS IC 10 May 2006 First experiences with the FETS pepperpot detector.
Advertisements

Parameterized Shower Simulation in Lelaps: a Comparison with Geant4 Daniel Birt, Amy Nicholson.
Section Two Requires e-h pair creation data from Section One and electric field model from Maxwell software package (Fig. 6 - left). The induced strip.
Structural response of SiC and PyC on swift heavy ion irradiation
Lab meetings Week of 6 October
Interactions of charged particles with the patient I.The depth-dose distribution - How the Bragg Peak comes about - (Thomas Bortfeld) II.The lateral dose.
The York Bragg Detector – Design and Simulation James Butterworth Seminar at York 31/03/2010.
Chemical Vapor Deposition ( CVD). Chemical vapour deposition (CVD) synthesis is achieved by putting a carbon source in the gas phase and using an energy.
Radiation Dosimetry Dose Calculations D, LET & H can frequently be obtained reliably by calculations: Alpha & low – Energy Beta Emitters Distributed in.
7th Sino-Korean Symp June Evolution of Ni-Al interface alloy for Ni deposited on Al surfaces at room temperature R. J. Smith Physics Department,
Proximity Effect in EBL Jian Wu Feb. 11, Outline Introduction Physical and quantitative model of proximity effect Reduction and correction of proximity.
Data processing in the Activation technique experiment. Making stacked or sandwiched in the repeated order of Al-Cu-Mo. Irradiation of the samples Using.
Salamanca.ppt, © Thomas Schwarz-Selinger, 03. Juni 2008 G. S. Oehrlein*, T. Schwarz-Selinger, K. Schmid, M. Schlüter and W. Jacob Interaction of Deuterium.
HITRAP-Meeting at GSI, Sept., 22 nd, 2005 C.Gabor, O.Meusel, J.Pozimski, H.Klein, U.Ratzinger Measurements with a Detector System for Low Energy Hydrogen.
Micro-, nano- and hierarchical structures for superhydrophobicity, self-cleaning and low adhesion by Bharat Bhushan, Yong Chae Jung, and Kerstin Koch Philosophical.
VFET – A Transistor Structure for Amorphous semiconductors Michael Greenman, Ariel Ben-Sasson, Nir Tessler Sara and Moshe Zisapel Nano-Electronic Center,
.Abstract Field effect gas sensors based on zinc oxide were fabricated. In order to increase gas sensor’s sensitivity to carbon monoxide, Au nanoparticles.
Ruđer Bošković Institute, Zagreb, Croatia CRP: Development of a Reference Database for Ion Beam Analysis Measurements of differential cross sections for.
CHEMISTRY. Composition of Matter Matter - _____________ _______________________ Matter is anything that ________________ ________________ ______ – quantity.
Space Instrumentation. Definition How do we measure these particles? h p+p+ e-e- Device Signal Source.
Yibin Xu National Institute for Materials Science, Japan Thermal Conductivity of Amorphous Si and Ge Thin Films.
Foundations of College Chemistry, 14 th Ed. Morris Hein and Susan Arena Lightning occurs when electrons move to neutralize charge difference between the.
4.1 Defining the Atom > 1 Copyright © Pearson Education, Inc., or its affiliates. All Rights Reserved. Chapter 4 Atomic Structure 4.1 Defining the Atom.
Center for Materials for Information Technology an NSF Materials Science and Engineering Center Nanolithography Lecture 15 G.J. Mankey
Performance limits of a 55  m pixel CdTe detector G.Pellegrini, M. Lozano, R. Martinez, M. Ullan Centro Nacional de Microelectronica, Barcelona, 08193,
NANO 225 Micro/NanoFabrication Electron Microscopes 1.
Russian Research Center” Kurchatov Institute” Theoretical Modeling of Track Formation in Materials under Heavy Ion Irradiation Alexander Ryazanov “Basic.
Development and Characterization of an Integrated Thick Resist Film Processing Tool D. Goustouridis 1, I. Raptis 1, E. Valamontes 2, I. Karanikas 3, N.
Alpha and Beta Interactions
Radiation damage calculation in PHITS
GEM foil and Simulation work at CIAE Xiaomei Li Shouyang Hu, Jing Zhou, Chao Shan, Siyu Jian and Shuhua Zhou Science and Technology Science and Technology.
Systematic studies of neutrons produced in the Pb/U assembly irradiated by relativistic protons and deuterons. Vladimír Wagner Nuclear physics institute.
4.1 Defining the Atom > 1 Key Concepts Preview Atoms Democritus Dalton’s Atomic Theory Atomic Size Copyright © Pearson Education, Inc., or its affiliates.
Electricity did not become an integral Part of our daily lives until Scientists learned to control the Movement of electric charge. This is known as.
Improving Laser/Plasma Coupling with Rough Surfaces K. Highbarger 1, R. Stephens 2, E. Giraldez 2, J. Jaquez 2, L. VanWoerkom 1, R. Freeman 1 1 The Ohio.
1 Thin Resist film Processing issues Ioannis Raptis Patterning Group Institute of Microelectronics National Center for Scientific Reasearch ‘Demokritos’
SEM Scanning Electron Microscope
Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays Christina L. Howe 1, Robert A. Weller 1, Robert A. Reed.
February 14, 2012 RESMM’12 Improved description of ion stopping power in compounds in MARS code Igor Rakhno Fermilab, APC.
Molecular Dynamics Study of Ballistic Rearrangement of Surface Atoms During Ion Bombardment on Pd(001) Surface Sang-Pil Kim and Kwang-Ryeol Lee Computational.
NEWATLASPIX: Development of new pixel detectors for the ATLAS experiment upgrade Giulio Pellegrini.
Modeling Radial Thermal Diffusion Ryan Phillips, Tim Gfroerer, and Peter Rossi Physics Department, Davidson College, Davidson, NC Abstract Thermal conduction.
Lithography in the Top Down Method New Concepts Lithography In the Top-Down Process New Concepts Learning Objectives –To identify issues in current photolithography.
SU-8 is a polymer EPON SU-8
Basics of Ion Beam Analysis
Developing Positive Negative Etching and Stripping Polymer Resist Thin Film Substrate Resist Exposing Radiation Figure 1.1. Schematic of positive and negative.
Numerical Model of an Internal Pellet Target O. Bezshyyko *, K. Bezshyyko *, A. Dolinskii †,I. Kadenko *, R. Yermolenko *, V. Ziemann ¶ * Nuclear Physics.
IMPLANTATION OF 8 Нe NUCLEI IN NUCLEAR TRACK EMULSION K.Z. MAMATKULOV LHEP, JINR, Dubna, Russia. DjPI, Uzbekistan. “Workshop on Nuclear Track Emulsion.
Controlled fabrication and optical properties of one-dimensional SiGe nanostructures Zilong Wu, Hui Lei, Zhenyang Zhong Introduction Controlled Si and.
UNCLASSIFIED Fundamental Aspects of Radiation Event Generation for Electronics and Engineering Research Robert A. Weller Institute for Space and Defense.
1 Activation by Medium Energy Beams V. Chetvertkova, E. Mustafin, I. Strasik (GSI, B eschleunigerphysik), L. Latysheva, N. Sobolevskiy (INR RAS), U. Ratzinger.
Overview of Tandem Accelerator Facility and related R&D Work at NCP Ishaq Ahmad
MICRO-STRIP METAL DETECTOR FOR BEAM DIAGNOSTICS PRINCIPLE OF OPERATION Passing through metal strips a beam of charged particles or synchrotron radiation.
F 2 l a s e r (1 5 7 nm) l i t h o g r a p h y: m a t e r i a l s a nd p r o c e s s e s E. Tegou, E. Gogolides, P. Argitis, C. D. Diakoumakos, A. Tserepi,
Manoj B. Jadhav Supervisor Prof. Raghava Varma I.I.T. Bombay PANDA Collaboration Meeting, PARIS – September 11, 2012.
Process technology. Process Technology 2 MMIC-HEMT, ETH Zürich Electrical nm contacts, Uni Basel Luft InP 70 nm DFB Laser, WSI München Applications: Nano.
12th Geant4 Space Users Workshop
AQUA-ADVANCED QUALITY ASSURANCE FOR CNAO
Metrology-characterization and simulation
Centro de Investigación y de Estudios Avanzados del Institúto Politécnico Nacional (Cinvestav IPN) Palladium Nanoparticles Formation in Si Substrates from.
for collaboration “Energy plus transmutation”
Date of download: 1/1/2018 Copyright © ASME. All rights reserved.
TCAD Simulations of Silicon Detectors operating at High Fluences D
Sang-Pil Kim1,2, Kwang-Ryeol Lee1, Jae-Sung Kim3 and Yong-Chae Chung2
Geometry of experimental setup for studies of inverse kinematics reactions with ROOT Students*: Dumitru Irina, Giubega Lavinia-Elena, Lica Razvan, Olacel.
Resist Resolution Enhancement and Line-end Shortening Simulation
1. Introduction Secondary Heavy charged particle (fragment) production
Chapter 4 Atomic Structure 4.1 Defining the Atom
Resist Resolution Enhancement and Line-end Shortening Simulation
Multiscale Modeling and Simulation of Nanoengineering:
Presentation transcript:

Simulation of Proton Beam High-Aspect-Ratio Micro / Nano Machining E. Valamontes 1, 2, M. Chatzichristidi 3, C. Potiriadis 4, D. Kotsiampasis 3, D. Niakoula 3, A. Karydas 5, S. Harissopoulos 5, D. Goustouridis 3, I. Raptis 3 1 Department of Electronics, TEI of Athens, Aegaleo, Greece 2 Department of Telecommunications, University of Peloponnese, GR Tripoli, Greece 2 Department of Telecommunications, University of Peloponnese, GR Tripoli, Greece 3 Institute of Microelectronics, NCSR “Demokritos” Athens, Greece 4 Greek Atomic Energy Commission, Agia Paraskevi, Attiki 15310, Greece 5 Institute of Nuclear Physics, NCSR “Demokritos” Athens, Greece Among the patterning technologies proposed and applied for the realization of high aspect ratio structures in the micro and nano scale, the Proton Beam Writing (PBW) is considered as a valuable tool for maskless patterning of such structures due to the unique ability of protons to maintain a straight path over long distances [1]. In the present work, the PBW capabilities are shown through simulation results of fine structures in resist films. These results prove the capability of PBW to produce very tall structures with almost vertical sidewall, with the aspect ratio limited practically only by the resist performance and the beam diameter provided. The performance of PBW is explored and proved through the patterning of an aqueous base developable negative chemically amplified resist (TADEP). By employing PBW on 2.0 μm thick TADEP, patterns with 110nm linewidth and aspect ratio of 18 were resolved. References [1]F. Watt, M.B.H. Breese, A.A. Bettiol, J.A. van Kan Materials Today 10(6) (2007) 20. [1] F. Watt, M.B.H. Breese, A.A. Bettiol, J.A. van Kan Materials Today 10(6) (2007) 20. [2] J. Biersack, L. Haggmark, Nucl. Instr. and Meth. 174 (1980) 257. [3] J. F. Ziegler, J. P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids, The Stopping and Ranges of Ions in Matter, Vol. 1, Pergamon Press Inc., [4] Stopping Powers and Ranges for Protons and Alpha Particles, International Commission on Radiation Units and Measurements, Report 49, [5] M. Chatzichristidi, I. Rajta, Th. Speliotis, E. Valamontes, D. Goustouridis, P. Argitis, I. Raptis Microsyst. Technol. (in press 2008) Acknowledgements This paper is part of the 05-NONEU-467 research project (PB.NANOCOMP), co- funded by E.U.-European Social Fund (75%) and the Greek Ministry of Development- GSRT (25%). Results Figure 2: The energy deposition vs. lateral dimension for various TADEPresist films (350nm, 2μm and 18μm) at the resist/Si interface. The beam broadening is very small regardless the very high film thicknesses. Figure 2: The energy deposition vs. lateral dimension for various TADEP resist films (350nm, 2μm and 18μm) at the resist/Si interface. The beam broadening is very small regardless the very high film thicknesses. Simulation modules and materials Abstract 110nm Figure 3: SEM images from the PBW on 2  m thick TADEP resist on Si. a) Low magnification top- view of the irradiated area. b) High magnification side view of the fine patterns. Each line is a two pixels pass line with beam step size of 10nm. The pitch values were 1  m and 4  m and the calculated aspect ratio 18. Figure 4: Side view SEM images from the PBW on 12  m thick TADEP resist on Si. Each line is a two pixels pass line with beam step size of 10nm. The pitch values were 1  m and 4  m and the calculated aspect ratio 42. Simulation Strategy For the PBW simulation several modules (exposure, thermal processing, development) should be coupled in a software tool. The first simulation module calculates the energy loss distribution in the resist film and the substrate due to a point proton beam irradiation, the second performs the convolution of the energy deposition with the proton beam profile (Gaussian in the present case) and the third the convolution with the layout of interest. Then in the case of chemically amplified resists a simulation of the PEB follows. The last simulation module is the dissolution which in the present work is a simple absorbed energy thresholding. In order to simplify the simulation study of the PBW, PMMA films are considered in the present study. Proton Beam – Matter Interaction The formalism adopted for simulating protons propagation is that of TRIM / SRIM [2]. At high energies, we have decided, for the sake of the computer efficiency, to base the calculations on the Coulomb potential [3].The formalism adopted for simulating protons propagation is that of TRIM / SRIM [2]. At high energies, we have decided, for the sake of the computer efficiency, to base the calculations on the Coulomb potential [3]. Stopping powers at high energies were calculated according to Bethe’s theory.Stopping powers at high energies were calculated according to Bethe’s theory. At low energies, electronic stopping powers were obtained from experimental data, closely related to the empirical fitting formulas developed by Andersen and Ziegler.At low energies, electronic stopping powers were obtained from experimental data, closely related to the empirical fitting formulas developed by Andersen and Ziegler. The nuclear stopping power, which is important only at very low energies, was obtained by the method of Everhart et al [4].The nuclear stopping power, which is important only at very low energies, was obtained by the method of Everhart et al [4]. TADEP resist In the present work, TADEP resist (Thick Aqueous Developable EPoxy resist, TADEP) is patterned with PBW. TADEP consists of partially hydrogenated poly(hydroxy styrene) (PHPHS), epoxy novolac (EP) and a sulfonium salt as the photoacid generator (PAG) and is capable to provide film thickness up to 55  m with one spin coating step. The processing steps are: a) spin coating from the suitable solution, b) Post apply Bake (PAB) on a leveled hot plate at 95 0 C for a time depending on the film thickness, c) Proton Beam exposure, d) Post Exposure Bake (PEB) at C for a time depending on the film thickness, exposure, e) development in TMAH 0.26N (AZ-726MIF from AZ-EM) for the dissolution of the uncrosslinked areas and f) rinsing in deionized H 2 O. The stripping is performed in acetone in ultrasonic bath. Detailed information on the resist’s chemistry and of resist’s processing can be found in [5]. Figure 1: Monte-Carlo (MC) simulation. a) Energy deposition vs. depth for various resist films. b) Comparison of the MC simulation results in bulk with the literature and SRIM. (Proton beam: 2MeV, Simulation Dz=50nm).