IFIC projects for the ILC IFIC – Valencia J. Fuster, C. Lacasta, P. Modesto, M. Vos, C. Alabau, A. Faus- Golfe, J. Resta, I. Carbonell IFIC - INSTITUTO.

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IFIC projects for the ILC IFIC – Valencia J. Fuster, C. Lacasta, P. Modesto, M. Vos, C. Alabau, A. Faus- Golfe, J. Resta, I. Carbonell IFIC - INSTITUTO DE FÍSICA CORPUSCULAR MINISTERIO DE EDUCACION Y CIENCIA Valencia, 6 – 10 November 2006

Layout studies: –Would it be worth using pixel-like detectors outside the vertex? Mechanical designs and constructions: –Studies of mechanical supports for a VTX detector: Prepare for the proof-of-concept staves. Mainly explore the different VTX sensor technologies: MAPS & DEPFET –Construction is still far in the future and may be something different, like the out-of-vertex pixel sensors or in any case the end-cap tracker. IFIC future contributions to ILC within the Detector framework IFIC - INSTITUTO DE FÍSICA CORPUSCULAR MINISTERIO DE EDUCACION Y CIENCIA Valencia, 6 – 10 November 2006

DEPFET Pixels DEPFET principle: DEPFET is an active pixel device with a fully depleted substrate. The first amplification stage is realized by a FET that is embedded into the silicon substrate. The charge is accumulated in the internal gate of the embedded transistor. DEPFET clearing operation: The accumulated charge must be remove after reading. A high positive voltage is applied to the clear contact. IFIC - INSTITUTO DE FÍSICA CORPUSCULAR MINISTERIO DE EDUCACION Y CIENCIA Valencia, 6 – 10 November 2006

MAPS Pixels MAPS principle: –Uses a non-depleted lightly doped epitaxial layer as active volume. –The epi-layer is placed between two high-doped p substrates which create potential barriers for the electrons. –The electrons are collected by diffusion. –100 % fill factor, required for tracking applications. –Signal read-out achieved by three in- pixel transistors. –Signal read-out based in source-follower configuration. Read-out chain

Where we are… DEPFET (MPI-Munich, Bonn Univ., …): Testing the DEPFET readout chip (CURO): Characterization of current version:  Internal calibration.  Radioactive source.  Laser. Helping in the design of the new chip. Participating in test-beams: August 2006 (CERN). October 2006 (CERN). … MAPS (RAL and Strasbourg): Negotiation stage. IFIC - INSTITUTO DE FÍSICA CORPUSCULAR MINISTERIO DE EDUCACION Y CIENCIA Valencia, 6 – 10 November 2006