New Product Introduction (NPI) DirectFET ™ ‒ New Corner Gate StrongIRFET™ Kevin Ream, DCDC PMD July 2015.

Slides:

Advertisements

Similar presentations

High Density Mezzanine Connector System (1.00mm)

Advertisements

An International Technology Roadmap for Semiconductors

Loctite PSX-D and PSX-P Thermal Interface Materials

HIL Connector An introduction to the new HIL wire-to-wire, crimp style connector series.

DDR3 Total Solution of Amphenol

LEN Connector To introduce the new LEN wire-to-board, crimp style connector series for LED applications.

LEA Connector To introduce the new LEA wire-to-board, crimp style connector series for LED applications.

Power Integrity Analysis and Optimization in the Substrate Design Harini M, Zakir H, Sukumar M.

Object Linking and Embedding A tool which allows different software application packages to share data.

Extremely small footprint High performance and reliability Design flexibility –Easy to use SwitcherPro™ design tool TPS A, 17-V SWIFT™ Converter.

ZPD Connector An introduction to the new ZPD wire-to-board, crimp style connector series.

HIGH DENSITY DESIGN COMPONENT SOLUTIONS. Technology Challenges Market Drivers:  Make it smaller  Make it operate faster  Make it more efficient  Make.

1 Confidential Updates for 2013 Catalogs Workspace Solutions.

UNL Series Product Release Applications and Opportunities Ken Thompson Product Manager Product Engineers Manny Rodrigues Brian Padelford.

Digital Circuit Implementation. Wafers and Chips  Integrated circuit (IC) chips are manufactured on silicon wafers  Transistors are placed on the wafers.

Copyright © 2012 Cleversafe, Inc. All rights reserved. 1 Combining the Power of Hadoop with Object-Based Dispersed Storage.

Amphenol PCI Express 1.1/2.0 Solution. Page 2 PCI Architecture Roadmap During the Intel® Developer Forum in September 2007, Intel Fellow Ajay Bhatt provided.

Modified_ CIRCUIT PROTECTION SOLUTIONS Confidential and Proprietary to Littelfuse, Inc. ® Littelfuse, Inc All rights reserved. CIRCUIT PROTECTION.

Introduction Purpose Provide an overview of Sullins 1.0mm pitch header series Objectives Discuss the SMH Male Header Series features & benefits Discuss.

October 2010 When should I consider a DC/DC Power Module Regulator?

Battery Pack Roadmap Presentation

TPS V to 14.5V Input, 6-A, Synchronous Buck Integrated Power Solution Power at your Fingertips.

Linear Technology Corporation

KONICA MINOLTA PRINTING SOLUTIONS EUROPE B.V. PagePro 1390 AIO Competitive Overview BPE January 2005.

© International Rectifier DirectFET  MOSFETs Double Current Density In High Current DC-DC Converters With Double Sided Cooling.

Optimizing DHCAL single particle energy resolution Lei Xia Argonne National Laboratory 1 LCWS 2013, Tokyo, Japan November , 2013.

Spartan Series FPGAs. Introducing the Xilinx Spartan Series  New Xilinx solution for high-volume applications  No compromises Performance, RAM, Cores,

Copyright 2010 Delmar, a part of Cengage Learning. All Rights Reserved. H O S P I T A L I T Y & T R A V E L M A R K E T I N G & T R A V E L M A R K E T.

Parani-BCD100 Overview Feb 24, What is the BCD100? Lower cost Bluetooth v2.0+EDR class 1 OEM module No antenna circuit The same SPP (Serial Port.

Web Design I Spring 2009 Kevin Cole Gallaudet University

2-PAD Digital Beamformer Chris Shenton11 th October PAD Digital Beamformer Chris Shenton 11 th October 2007.

High-side & Low-side and Half-Bridge Drivers October 2015

XMA Connector Purpose: Objectives: Content:

HVAC PDH Promotion – Aug Automotive HVAC System HVAC Control Module Hall Switch TLE V from Battery Control Panel Hall Switch TLE 4966 LIN.

Linear Regulator Fundamentals

MOSFETs Version 1.0. MOSFET Portfolio Performance & Strategy.

GaN Systems Confidential

E Control Devices have a wide range of Latching Relays. The range of latching includes Relays, 16 Amp Latching Relays, 30Amp Latching Relays, 80 Amp Latching.

Dinga.com.au : Angling Equipment at Australia’s Lowest Prices! Featured Product $

Copyright © 2008 Vista Higher Learning. All rights reserved. 9.

Infineon CoolIR2DieTM Power Module

Rs = Current Sensing Resistor

PRESS RELEASE DATA SHEET

The Making of The Perfect MOSFET

From: Reliability of Lead-Free Solder Joints

PRESS RELEASE Mid-Voltage Power MOSFETs in PQFN Package Utilizing Copper Clip Technology DATA SHEETS HI-RES GRAPHIC The new power MOSFETs featuring IR’s.

Rugged, Reliable 600V Trench Ultrafast IGBTs

Automotive MOSFETs in Novel WideLead Package

Expansion of Automotive Qualified 40V to 100V Gen 10.2 MOSFETs

RHC 2512 Size 2 Watt Chip Training Module

Introducing the new generation MASTERColour CDM Elite lamps

Automotive-Qualified 40V 5x6mm Dual PQFN COOLiRFET™s

JFPS Connector Purpose: Objectives: Content:

POWER BLOCK DEVICES FOR DC-DC SYNC BUCK APPLICATIONS

1200V GEN8 IGBT Family IR has introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation V IGBT platform.

This is the new logo for the XC4000X family

Rugged Automotive Qualified Planar MOSFETs

PRESS RELEASE DATA SHEETS HI-RES GRAPHIC

300V Power MOSFETs Improve System Efficiency

Automotive Warp 2 Series IGBT with Ultrafast Soft Recovery Diode

Vishay Basic training IHLP power inductors Low DCR, reduced EMI / Size

Power Trench® Dual CoolTM

XLamp XP-G2 High Efficacy LEDs

Power Trench® MOSFETs in Dual CoolTM Package Internal Webcast

FAN5345: Asynchronous Series. Boost LED Driver with

Year of Construction 2007 Serial# S070010

Year of Construction 2007 Serial#: S070009

Copyright © Infineon Technologies AG All rights reserved.

Copyright © Infineon Technologies AG All rights reserved.

Copyright © Infineon Technologies AG All rights reserved.

Presentation transcript:

New Product Introduction (NPI) DirectFET ™ ‒ New Corner Gate StrongIRFET™ Kevin Ream, DCDC PMD July 2015

New Corner Gate DirectFET ™ Great new design for even lower Package Resistance Unmatched device current rating >150 A in Medium Can Significantly larger source solder area than existing Medium Can DirectFET ™ footprints Page 210 February 2015Copyright © Infineon Technologies AG All rights reserved. MN Footprint ME Footprint R THJ-PCB = ~ 1.0 ⁰ C/W R THJ-PCB = 0.75 ⁰ C/W SS G S S SS SG

ME-Type DirectFET ™ vs PQFN ME-Type DirectFET ™ has four times larger source contact area than a typical 5x6 PQFN package Much higher current density and higher reliability Ideal for high performance Power tools and RoHS 6 compliant equipment Page 310 February 2015Copyright © Infineon Technologies AG All rights reserved. ME DirectFET ™ : 3.7mm 2 source contact area: 5x6 PQFN: < 1mm 2 source contact area S S S S SG SSS G

New Corner Gate Pad for Scalable Designs Page 4May 2015Copyright © Infineon Technologies AG All rights reserved. Single pad layout accommodates multiple footprints Optimized R DS(on) for lowest possible losses IRF7483TRPBF ~60% Die Size Fits on same footprint IRF7480TRPBF 100% Die Size S S SS SG SS S G

DirectFET™ Portfolio – Medium Can, Corner Gate Page 5Copyright © Infineon Technologies AG All rights reserved.10 February 2015 ME MF Part NumberPackageOutline V DS (V) R DS(on) (mΩ) 10 V I D (A) Q G (nC) IRF7480MTRPBFMedium Can DirectFET ™ ME400.9 / IRF7483MTRPBFMedium Can DirectFET ™ MF401.7 / IRF60DM206Medium Can DirectFET ™ ME602.2 / IRF7580MTRPBFMedium Can DirectFET ™ ME602.9 / IRF7780MTRPBFMedium Can DirectFET ™ ME754.5 /

Part Numbers, Pricing and Documentation Links Page Copyright © Infineon Technologies AG All rights reserved. Part NumbersSamples AvailableProductionPackageRegisterable(Y/N)MOQ Starting MSRP $ per piece RoHS (Y/N) IRF7480MTRPBF now DirectFET ™ ME Y 4800Y IRF7483MTRPBF now DirectFET ™ MF Y in qty of 10KY IRF60DM206 now DirectFET ™ ME Y 4800Y IRF7580MTRPBF now DirectFET ™ ME Y 4800Y IRF7780MTRPBF now DirectFET ™ ME Y 4800Y

StrongIRFET™ Corner Gate DirectFET ™ For more information, please visit the product pages on the Infineon website. Support Page 7May 2015Copyright © Infineon Technologies AG All rights reserved.

Summary Page 8May 2015Copyright © Infineon Technologies AG All rights reserved. Key Features and Benefits: ―Ultra-low R DS(on) ―High current rating ―Rugged silicon ―Improved gate, avalanche and dynamic dv/dt ruggedness ―Lower thermal resistance to PCB ―High current density ―Scalability of designs ―RoHS 6 compliant Target Applications: