Corial 200ML

COSMA Software with:  Edit menu for process recipe edition,  Adjust menu for process optimizing,  Maintenance menus for complete equipment control via internet with VPN (Virtual Private Network). CORS Software for:  Data reprocessing (Measures and data comparison). Equipment Control & Software

A Tool Organized in Successive Levels Actions Constructor LotsActions Process Closed-loop Server for GUI COSMA Supervisor Embedded control PU Embedded control function COSMA Controller Process Controller Device Controllers Physical devices Operator Remote GUI PC User Monitoring Monitoring Monitoring

Diagram Modes Diagram Modes Stand-byMode Step by step Mode ProductionMode OptimizationMode ConstructorMode Shut down Mode Normal Errors Operator Production Maintenance Constructor

A Communicant Tool COSMA Supervisor COSMAGUI Customer Ethernet Network Process Control Unit (1) Process Control Unit (2) Device Control (1) Ethernet Device Control (2) Ethernet WANVPNADSL Fix IP Firewall Dedicated Ethernet network

System HT/BT Power Supplies Magnetron Load-lock RF Generator UHF Generator Reactor Electronic Control TMP Control Isolator

System TMP Throttle Valve Matching Network Lift Isolator Magnetron Gas box Load-lock

Pumping System TMP TV Reactor Dry Pump ADP 122 Load-Lock Valve Load-lock Gate valve for quick reactor venting and cleaning

 New microwave (2.45 GHz) plasma source with hot walls to reduce polymer condensation and to enhance plasma cleaning. It produces High Density Plasma in a wide working pressure range (10 to 100 mT) for fast etching of up to Ø200 mm wafers,  Helium assisted heat exchange between cathode, shuttle and wafer with mechanical clamping to maintain wafer temperature below 100°C, Numerous plasma modes accessible in the same process:  Microwave High Density Plasma + RF biasing  Reactive Ion Etching  Microwave High Density Plasma for ultra-soft etching. Reactor Features (1)

 Reactor with hot walls enables:  Highly selective processes,  Low contamination of the process chamber. Very low plasma potential (< 2 Volts) and automatic self bias regulation giving rise to precise control of low ion energy levels (< 15 eV),  No damage etching with no RF biasing,  Isotropic etching with low RF biasing,  Anisotropic etching with high RF biasing. Reactor Features (2)

Electron density : to e/cm 3 PLASMA Magnetron Coupling Device High Density Plasma Source Microwaves 2.45 GHz

HDP Reactor Design Coupling device Reactor Laser window

HDP Reactor Design Coupling device Microwave cavity Laser window Gas shower (Thermally isolated) Quartz tube and shielding (Thermally isolated) Reactor walls are thermally isolated. They are getting hot during etching. This reduces the polymer condensation and the cross contamination between different processes.

Loading Cathode Loading tool Shuttle

Loading Cathode Shuttle

Clamping Cathode Shuttle

Cooling Cathode Shuttle Helium

Etching Cathode Shuttle Helium PLASMA

End of Etching Loading tool Cathode Shuttle

Unloading Cathode Shuttle

Unloading Shuttle Cathode

Pression He en fonction du débit - He Pressure Versus He Flow Rate Débit He - He Flow Rate - (sccm) Pression He (Torrs) Pressure - - He Pressure - He Pressure vs He Flow Rate Work Area Goal: Ensure wafer cooling The shuttles are designed according to wafer size, number of wafers and process recipes for optimum process results. The use of dedicated shuttles according to process strongly reduces the cross contamination. Altymid Ring Wafer O’ Ring Base Plate Graphite Plate Example of Shuttle

The latest submicron technology needs precise monitoring:  Automatic endpoint detection,  CCD camera with magnification > 120 X,  Laser beam diameter ≤ 20  m. Precise Monitoring A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.

Interferences lead to a periodic signal having a /2n period versus time Interferences Photodiode Laser Endpoint Detection Reflected beam 1 Interface 1 Underlayer Interface 2 Refractive Index = n Time Signal Laser beam Reflected beam 2

 New microwave source with hot walls which reduces polymer condensation, enhances plasma cleaning, minimizes cross contamination. It produces High Density Plasma for uniform etching of films on batch of seven 2” wafers or wafer size up to  200 mm,  Very low plasma potential (<2 Volts) and automatic self bias regulation to precisely control the ion energy,  Helium assisted heat exchange to maintain resist and device integrity,  Various shuttles to reduce cross contamination. They are designed to fit with wafers and processes recipes for the best process results,  Wide process range from isotropic to anisotropic and fast etch rate to low etch rate with very high selectivity,  Laser endpoint for precise process monitoring,  Capability of many etching modes from RIE, HDP + RIE and HDP in the same process recipe. Recap of Corial 200ML Features