ECE 340 ELECTRONICS I MOS APPLICATIONS AND BIASING.

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Presentation transcript:

ECE 340 ELECTRONICS I MOS APPLICATIONS AND BIASING

MOSFET REGIONS OF OPERATION CUT OFF LINEAR, OHMIC, TRIODE SATURATION

CUT OFF REGION OF OPERATION

LINEAR, OHMIC, TRIODE REGION OF OPERATION

SATURATION REGION OF OPERATION

MOSFET CHARACTERISTICS v DS 0V2V4V6V8V10V12V IDID 0mA 0.5mA 1.0mA 1.5mA v GS3 v GS2 v GS1 Linear, Ohmic, Triode ROP Saturation ROP Cutoff ROP

MOSFET BIASING SELECTION OF GATE TO SOURCE VOLTAGE PRODUCES DC DRAIN TO SOURCE VOLTAGE PRODUCES DC DRAIN CURRENT DEFINES REGION OF OPERATION

DC LOAD LINE INPUT DC BIAS EQUATION OUTPUT DC BIAS EQUATION LINEAR EQUATION WITH SLOPE DETERMINED BY EXTERNAL RESISTORS

MOSFET BIAS CIRCUIT

INPUT EQUATION SETS OR SELECTS DC GATE TO SOURCE VOLTAGE SETS OR SELECTS DC DRAIN CURRENT CONSTRUCTED BY PERFORMING KVL ON INPUT PORTION OF THE CIRCUIT

KVL INPUT EQUATION

OUTPUT EQUATION SELECTS OR SETS DC DRAIN TO SOURCE VOLTAGE SELECTS OR SETS DC DRAIN CURRENT CONSTRUCTED BY PERFORMING KVL ON OUTPUT PORTION OF THE CIRCUIT

KVL OUTPUT EQUATION

LOAD LINE EQUATION USED TO SELECT BIAS PARAMETERS V GS, V DS, AND I D.

v DS 0V2V4V6V8V10V12V IDID 0mA 0.5mA 1.0mA 1.5mA v GS3 v GS2 v GS1 Linear, Ohmic, Triode ROP Saturation ROP Cutoff ROP LOAD LINE

BIASING CIRCUITS USED TO ESTABLISH - V GG (GATE VOLTAGE) - I D (DRAIN CURRENT) -V DS (DRAIN TO SOURCE VOLTAGE) USES ONE OR TWO POWER SUPPLIES

USING TWO POWER SUPPLIES RDRD RSRS V DD V SS IDID + V DS -

DESIRED BIAS CONDITIONS

SELECTION OF R S

SELECTION OF R D

USING ONE POWER SUPPLY

DEVELOPMENT OF GATE VOLTAGE

INPUT AND OUTPUT EQUATIONS

DESIRED BIAS CONDITIONS

SELECTION OF R 1 AND R 2

SELECTION OF R S AND R D