QDR/DDR SRAM & LLDRAM Waqar Haidari, Computing and Communications BU

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Presentation transcript:

QDR/DDR SRAM & LLDRAM Waqar Haidari, Computing and Communications BU Sales Training June 24th ,2010 © 2010 Renesas Electronics America Inc. All rights reserved.

QDR Competitive Landscape LLDRAM Status and Roadmap Agenda Introductions Overview Applications Target customers QDR Status and Roadmap QDR Competitive Landscape LLDRAM Status and Roadmap LLDRAM Competitive Landscape Criteria for qualifying opportunities Collateral Summary Call to action © 2010 Renesas Electronics America Inc. All rights reserved.

Contacts in the C & C BU for Memory QDR and LLDRAM – Waqar Haidari TCAM – Rob Raghavan © 2010 Renesas Electronics America Inc. All rights reserved.

Overview Our product development is mainly focused on the network equipment market QDR and DDR SRAM Low Latency DRAM TCAM Committed to long term support Roadmap with advanced technology, higher density and higher performance products Validation activities with NPU & FPGA suppliers Confirm interoperability © 2010 Renesas Electronics America Inc. All rights reserved.

SRAM Market Share Rankings - Worldwide Other Samsung NECEL CY09 $912M GSI Renesas Technology Cypress Source: Gartner Dataquest Mar. ‘10 © 2010 Renesas Electronics America Inc. All rights reserved.

Renesas Memory Solutions for Networking Applications Critical Requirement Packet Buffer LLDRAM eDRAM Density and Bandwidth QDR Random Cycle Time Look-Up Table DDR SRAM TCAM LLDRAM Read Latency Random Cycle Time Control Statistics Linked List QDR Random Cycle Time and Read Latency © 2010 Renesas Electronics America Inc. All rights reserved.

Other markets/applications Test equipment Imaging Any applications requiring High bandwidth Fast random access Low latency © 2010 Renesas Electronics America Inc. All rights reserved.

Target customers ACME packets Alcatel-Lucent Allied Telesis Brocade Ciena Cisco Cloudshield Emulex Enterasys Ericsson Extreme Networks Force10 Fujitsu F5 Networks Hitachi HP Huawei IBM Ixia Juniper Networks Matrox Motorola BCS Nokia/Siemens Nortel Networks/Avaya Palo Alto Networks Spirent Tellabs * Not doing business at present with customers shown in red © 2010 Renesas Electronics America Inc. All rights reserved.

QDR SRAM Co-Development Team URL http://www. qdrconsortium.com/ Renesas is a member of QDR Co-Development team 1. Multiple sources 2. Compatible with LA-1 (Look-Aside) interface from NPF 3. Highest bandwidth solution (>2 Gbps @ 533 MHz) 4. Data Valid Window – 65% of clock cycle 5. Package Migration defined through 288 Mb © 2010 Renesas Electronics America Inc. All rights reserved. 2A

QDR Status 18M Current business being supported by 100nm(NEC) die bank expected to last until March 2011 55nm die sampling in Sep timeframe Transition customers to 55nm die by Q410/Q111 36M 90nm (RT) die will continue to be supported 100nm(NEC) die expected to last until Oct 2010 55nm (NEC) die sampling now Transition all 36M 100nm customers to 55nm asap 55nm die to be qualified in all new 36M opportunities © 2010 Renesas Electronics America Inc. All rights reserved.

QDR Status contd. 72M 55nm (NEC) die is available now and will continue to be supported QDRII B2 300MHz QDRII+ 450MHz 45nm (RT) die going through re-spin and will be sampling in Aug/Sep timeframe QDRII B2 250MHz QDRII+ 533MHz Positioning of 72M for new opportunities may depend on several factors such as 72M history with the customer Customer qualification window Performance requirements Cost sensitivity © 2010 Renesas Electronics America Inc. All rights reserved.

72M Power Comparison Renesas (NEC) 55nm (RT) 45nm Cypress 65nm GSI (?) QDRII B2 300MHz 840mA NA 910mA QDRII B4 300MHz 650mA 850mA 790mA 950mA QDRII+ 450MHz 925mA 1130mA 1100mA © 2010 Renesas Electronics America Inc. All rights reserved.

QDR/DDR SRAM Validation with NPU/FPGA Company NPU / FPGA Device Renesas Part Number Result AMCC nP3710 36Mb QDR B4 x36 250MHz UPD44325184 Pass Broadcom BCM56624 & 56634 36Mb DDR B2 x36 250MHz UPD44324362B In progress Marvell Prestera 18Mb DDR B2 x18 300MHz UPD44164182A Bay Microsystems Chesapeake 72Mb QDR II+ B4 x36 400MHz UPD44647366A 72Mb DDR II+ B2 x36 400MHz UPD44646363A Xelerated X11 18Mb DDR B2 x36 250MHz UPD44164362A UPD44324362 PMC Sierra PM5420 and 5426 Ezchip NP2 18Mb QDR B2 x9 250MHz UPD44165092A 36Mb QDR B2 x18 250MHz UPD44325182 Altera　 Stratix II 18Mb QDR B4x36 300MHz UPD44165184A Stratix III 18Mb QDR B4 x36 300MHz Stratix IV 72Mb QDR II+ B4 x18 400MHz UPD44647186A © 2010 Renesas Electronics America Inc. All rights reserved.

QDR SRAM Roadmap : MP : Under development : Planning CY10/1H CY10/2H 800MHz 144/288M Next Gen SRAM 533MHz 333MHz 250MHz 45nm 144M QDR-II+ QDR-II 533MHz 333MHz 250MHz 45nm 72M QDR-II+ QDR-II 450MHz 300MHz 55nm 72M QDR-II+ QDR-II 533MHz 45nm 36M QDR-II+ 300MHz 55nm 36M QDR-II 300MHz 250MHz 90nm & 100nm 36M QDR-II 300MHz 55nm 18M QDR-II 300MHz 250MHz 100nm 18M QDR-II : MP : Under development : Planning © 2010 Renesas Electronics America Inc. All rights reserved.

QDR Competitive Landscape Samsung Historically a major player but no new SRAM development Supporting existing products based on ~90nm Customers concerned about EOL No 72M QDRII+/DDRII+ Cypress 65nm 72M available Claim to have 72M QDRII+ 500MHz in production Customers continue to experience supply shortages on 36M and 72M GSI Offer 18M compatible to QDRII+ Sampling 144M now - QDRII b2-250MHz, b4-333MHz and QDRII+ 450MHz 72M 65nm expected soon - 550MHz Promoting Sigma Quad IIIe - b4(625MHz) and b2(500MHz) but customers may be reluctant to go sole sourced ISSI No 18M QDR compatible offering 72M sampling but no ODT No performance advantage over Renesas in any density © 2010 Renesas Electronics America Inc. All rights reserved.

QDR Competitive Landscape contd. Renesas Strength: 55nm die should help grow 18M and 36M QDRII business Two 72M solutions (55nm and 45nm) give us more flexibility in capturing 72M QDRII/QDRII+ design-wins 55nm has lower power consumption than Cypress excellent SER and SEL test results I-temp support available on all 45nm products Weakness: No 18M QDRII+ offering Late in 36M QDRII+ and 144M © 2010 Renesas Electronics America Inc. All rights reserved.

Low Latency DRAM LLDRAM has a DRAM core and a SRAM like interface tRC Performance QDR II 18Mb~144Mb tRC=4.8~7.5ns LLDRAM 288~576Mb tRC=~20ns DDR2/3 DRAM 256Mb~2Gb tRC= ~40ns QDR is better in applications that require fast random access LLDRAM is better suited where density is a higher priority Cost © 2010 Renesas Electronics America Inc. All rights reserved.

Better tRC than Commodity DRAM (Cycle Time or Random Access Time) LLDRAM Advantages Better tRC than Commodity DRAM (Cycle Time or Random Access Time) Lower cost per bit compared to SRAM ECC (parity) Bit for Higher System Security Some system need parity bit for ECC correction. Standard DRAM : No parity bit (x8, x16 and x32) LLDRAM: Has parity bit (x9, x18 and x36) 288M and 576M LLDRAM offer an alternate source to customers that are sole sourced with Micron RLDRAM II © 2010 Renesas Electronics America Inc. All rights reserved.

288M LLDRAM in mass production LLDRAM Status 288M LLDRAM in mass production Cisco and Juniper are the main customers Trying to expand customer base Alcatel, Extreme Networks, ACME packets, Ciena 576M LLDRAM expected in Q410 Cisco, Juniper, Alcatel, Brocade and others anxious to have a second source 1.1G LLDRAM III Developed based on spec from Cisco First ES will be delivered to Cisco within June General availability TBD No restriction on selling to other customers Cisco had chosen GSI to second source but GSI apparently had some issues and their status is now unclear © 2010 Renesas Electronics America Inc. All rights reserved.

288M LLDRAM Line up I/O Bit Config. Part Number Vext [V] VDD [V] VDDQ Max. Freq. [MHz] Schedule ES CS MP SIO 16M x 18 uPD48288118FF-EFxx-DW1/-A 2.5 +0.13/ -0.12 1.8 +/- 0.1 1.5 +/- 0.1 400 300 200 Now Now Now CIO 32M x 9 uPD48288209FF-EFxx-DW1/-A 16M x 18 uPD48288218FF-EFxx-DW1/-A 8M x 36 uPD48288236FF-EFxx-DW1/-A SIO 16M x 18 uPD48288118FF-Exx-DW1/-A 1.8 +/- 0.1 300 200 Now Now Now CIO 32M x 9 uPD48288209FF-Exx-DW1/-A 16M x 18 uPD48288218FF-Exx-DW1/-A 8M x 36 uPD48288236FF-Exx-DW1/-A © 2010 Renesas Electronics America Inc. All rights reserved.

Vendor Processor Validation status Chipset 288M LLDRAM Validation Network Processors Vendor Processor Validation status EZChip NP2 Complete Xelerated X11 LSI AAP650 Bay Micro Chesapeake Visual Media Chipset Texas Instruments DDP 3020 & 3021 © 2010 Renesas Electronics America Inc. All rights reserved.

LLDRAM Roadmap Not RLDRAM-II Compatible RLDRAM-II Compatible : MP CY10/1H CY10/2H CY11/1H CY11/2H CY12/1H CY12/2H Not RLDRAM-II Compatible x18/x36 800MHz 40nm 1.1G Low Latency DRAM III RLDRAM-II Compatible x9/x18/x36 533MHz T.B.D 1.1G Low Latency DRAM x9/x18/x36 533MHz 70nm 576M Low Latency DRAM x9/x18/x36 533MHz 70nm 288M Low Latency DRAM Vddq=1.5V x9/x18/x36 400MHz 90nm 288M Low Latency DRAM Vddq=1.8V x9/x18/x36 400MHz 90nm 288M Low Latency DRAM : MP : under Development : Planning © 2010 Renesas Electronics America Inc. All rights reserved.

LLDRAM Competitive Landscape Micron is the only competitor at the present time Micron 288M and 576M RLDRAM II in mass production Micron RLDRAM III spec not open to the public GSI was developing 576M RLDRAM II compatible product and was chosen by Cisco to second source 1.1G LLDRAM III but has apparently had some issues and their status is unclear ISSI is proposing a 576M Network DRAM solution to Cisco but Cisco is not interested Renesas is well positioned for growth in the LLDRAM area © 2010 Renesas Electronics America Inc. All rights reserved.

Criteria for qualifying new opportunities No minimum volume requirements for QDR or LLDRAM Opportunities in Medical or Military applications may require details on the application and end product © 2010 Renesas Electronics America Inc. All rights reserved.

Low Latency DRAM Design Guide Collateral For QDR and LLDRAM datasheets not posted on the web and simulation models email Waqar.Haidari@renesas.com or call (408) 588-6354 Low Latency DRAM Design Guide http://america2.renesas.com/memory/products/ld/ll-info.html © 2010 Renesas Electronics America Inc. All rights reserved.

Our products are very competitive in price and performance Summary We are unique in that we are the only supplier that offers QDR/LLDRAM/TCAM We have extensive experience in delivering high quality, high volume QDR/LLDRAM production support Our products are very competitive in price and performance Samsung’s potential exit from the SRAM market presents tremendous opportunities for Renesas © 2010 Renesas Electronics America Inc. All rights reserved.

Promote 36M 55nm in all new 36M opportunities Call to action We need more design-wins. Please follow up on any pending QDR/LLDRAM qualifications Promote 36M 55nm in all new 36M opportunities Find new 72M opportunities and we’ll recommend the right 72M solution that best fits the opportunity Many customers are still sole sourced with Micron RLDRAMII. Highlight the risk of being sole sourced and motivate them to qualify Renesas LLDRAM. For 288M check I/O voltage Let’s work together and develop account penetration plan for customers that we are not currently engaged with © 2010 Renesas Electronics America Inc. All rights reserved.

Appendix © 2010 Renesas Electronics America Inc. All rights reserved.

QDR II vs. QDR II+ Feature differences Max.Freq. 250Mhz 300Mhz 400Mhz 533Mhz I/O,Data Rate, Interface Separate, DDR,HSTL Input Clocks K,/K Output Clocks C,/C (6P,6R) In case of single clock mode, K,/K is used for output Echo Clock CQ,/CQ Burst Length B2 B4 Write Latency 1 Read Latency 1.5 2 2.5 Q driver strength ZQ-pin calibration 35ohm to 70 ohms Q valid indicator QVLD-pin (6P) 　Input Termination ODT Control (6R) Package 165BGA © 2010 Renesas Electronics America Inc. All rights reserved.

288M LLDRAM Features Design Rule Density Bit Organization I/O Burst Length Bank Size Vcc Vddq Vext Max Frequency Min tRC/tRL Refresh Rate Package Status : 90nm DRAM Process : 288Mb : x9/x18/x36 : Common I/O for x9/x18/x36 Separate I/O for x18 only : 2/4/8 for x9/x18 2/4 for x36 : 8 : 1.8V : 1.5V or 1.8V : 2.5V : 400MHz (for 1.5V Vccq) : 300MHz (for 1.8V Vccq) : 20ns : 32ms @8kword, 8bank (0.49us/1bank) : 144pin uBGA : MP © 2010 Renesas Electronics America Inc. All rights reserved.

576M LLDRAM Features Design Rule Density Bit Organization I/O Burst Length Bank Size Vcc Vddq Vext Max Frequency Min tRC/tRL Refresh Rate Package Status : 70nm DRAM Process : 576Mb : x9/x18/x36 : Common I/O for x9/x18/x36 Separate I/O for x9/x18 : 2/4/8 for x9/x18/x36 : 8 : 1.8V : 1.5V or 1.8V : 2.5V : 533MHz : 15ns : 32ms @16kword, 8bank (0.49us/1bank) : 144pin uBGA ES: Dec.'10, CS: Q1CY11, MP: Q2CY11 © 2010 Renesas Electronics America Inc. All rights reserved.

1.1G LLDRAM III Features Frequency : 800MHz@BL4 , 600MHz@BL2 Organization x36 or x18 Common I/O 8 Banks Burst Length : 2 or 4 Latency tRC=13.75ns@BL4 , 13.3ns@BL2 tRL=tRC+3 @BL4 , tRC+2 @BL2 tWL=tRL+1 Training Sequence for per-bit deskew External Refresh : 2ms data retention time Supply Voltage Vdd (Core)=1.5V , Vddq (I/O)=1.0V HSIO, Vext=2.5V Vref : 0.7*VDDQ PKG : 180 pin BGA (14x18.5, 1.0mm x 1.0mm ball pitch) © 2010 Renesas Electronics America Inc. All rights reserved.

Future products under consideration QDR-III 144Mb ~ 288Mb 800MHz+ LLDRAM-IV 1.1Gb ~ 2.2Gb 1.6GHz / 3.2Gbps CAM-V 80Mb ~ 160Mb 600Msps+ Serial Interface Memory 1.1Gb ~ 2.2Gb (1T) / 144Mb ~ 288Mb (6T) 3.2GAps+ (16 x 10G Serial) © 2010 Renesas Electronics America Inc. All rights reserved.

LLDRAM Part Number Guide uPD48288236FF-EF18-DW1-A Package FF : uBGA Package Size DW1: 11x18.5mm Lead Free (none) : Pb (RoHS5/6) A : Pb Free (RoHS6/6) Density 288 : 288Mb 576 : 576Mb I/O 1 : SIO 2 : CIO VDDQ E : 1.8V EF : 1.5V Speed Grade 18 : 533MHz 24 : 400MHz (tRC=15ns) 25 : 400MHz 33 : 300MHz 50 : 200MHz Bit Configuration 09 : x9 bit 18 : x18 bit 36 : x36 bit Die Revision (none) : 1st die A : A-die (Shrink) © 2010 Renesas Electronics America Inc. All rights reserved.

QDR/DDR-II Part Number Guide 100nm/55nm uPD44645182AF5-E40-FQ1-A Density 16 : 18Mb 32 : 36Mb 64 : 72Mb Package F5 : BGA Package Size EQ2/3:13x15mm FQ1:15x17mm Lead Free (none) : Pb (RoHS5/6) A : Pb Free (RoHS6/6) Function 4 : DDR-II 5 : QDR-II Die Revision (none) : 1st die A : A-die (Shrink) B : B-die (2nd Shrink) Bit Configuration 08 : x8 bit 09 : x9 bit 18 : x18 bit 36 : x36 bit Burst Length 2 : 2B 4 : 4B 5 : 2B (DDRII SIO) Speed Grade E33 : 300MHz E40 : 250MHz E50 : 200MHz © 2010 Renesas Electronics America Inc. All rights reserved.

QDR/DDR-II+ Part Number Guide (RL=2.5) 100nm/55nm uPD44647186AF5-E22-FQ1-A Density 16 : 18Mb 32 : 36Mb 64 : 72Mb Package F5 : BGA Package Size EQ2:13x15mm FQ1:15x17mm Lead Free (none) : Pb (RoHS5/6) -A : Pb Free (RoHS6/6) Function 6 : DDR-II+ 7 : QDR-II+ Die Revision (none) : 1st die A : A-die (Shrink) B : B-die (2nd Shrink) Burst Length (RL=2.5) 3 : 2B 6 : 4B 7 : 2B (DDRII+ SIO) Speed Grade E22 : 450MHz E25 : 400MHz E30 : 333MHz E33 : 300MHz Bit Configuration 09 : x9 bit 18 : x18 bit 36 : x36 bit © 2010 Renesas Electronics America Inc. All rights reserved.

QDR/DDR-II Part Number Guide Lead Free For 36Mb (None) : Pb (RoHS5/6) B0 : Pb Free (RoHS6/6) For 72M A0 : Pb 90nm/45nm R1Q2A7218ABG-40IA0 Function 2 : QDR-II 2B 3 : QDR-II 4B 4 : DDR-II 2B 5 : DDR-II 4B 6 : DDR-II 2B (SIO) Package BG : BGA (15x17mm) Temp. Range R : 0 to 70 deg.C I : -40 to 85 deg.C Die Revision Core Voltage A : 1.8V Speed Grade 30 : 333MHz 33 : 300MHz 40 : 250MHz 50 : 200MHz Bit Configuration 09 : x9 bit 18 : x18 bit 36 : x36 bit Density 36 : 36Mb 72 : 72Mb © 2010 Renesas Electronics America Inc. All rights reserved.

QDR/DDR-II+ Part Number Guide (RL=2.5) Lead Free For 36Mb (None) : Pb (RoHS5/6) B0 : Pb Free (RoHS6/6) For 72M A0 : Pb 90nm/45nm R1QAA7218ABG-22IA0 Function (RL=2.5) A : QDR-II+ 4B B : DDR-II+ 2B C : DDR-II+ 4B D : QDR-II+ 4B ODT E : DDR-II+ 2B ODT F : DDR-II+ 4B ODT Package BG : BGA (15x17mm) Temp. Range R : 0 to 70 deg.C I : -40 to 85 deg.C Die Revision Core Voltage A : 1.8V Speed Grade 19 : 533MHz 20 : 500MHz 22 : 450MHz Density 36 : 36Mb 72 : 72Mb Bit Configuration 18 : x18 bit 36 : x36 bit © 2010 Renesas Electronics America Inc. All rights reserved.

© 2010 Renesas Electronics America Inc. All rights reserved.