Active Pixel Sensors for Direct Detection of Soft X-rays Andrew Blue* a, R. Bates a, A. Clark c, S. Dhesi b, D. Maneuski a, J. Marchal b, P. Steadman b,

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Presentation transcript:

Active Pixel Sensors for Direct Detection of Soft X-rays Andrew Blue* a, R. Bates a, A. Clark c, S. Dhesi b, D. Maneuski a, J. Marchal b, P. Steadman b, G. Stewart a N. Tartoni b, R. Turchetta c a: University of Glasgow, School of Physics and Astronomy, Kelvin Building, University Avenue, Glasgow, G12 8QQ b: Diamond Light Source Ltd, Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE c: STFC Rutherford Appleton Laboratory, Harwell Oxford, Didcot, OX11 0QX

Andrew Blue PSD9 14/9/112 Introduction Motivation for CMOS APS Lab Tests –Photon Transfer Curve –QE Diffraction Experiment At Diamond Light Source –Noise Sources –Signal-to-Noise Profiles Conclusions

Andrew Blue PSD9 14/9/113 Charge Coupled Devices CCDs collect charge within their pixel architecture, each pixel acting as a capacitor. Once the integration time is complete, each capacitor passes charge sequentially down a column. If a pixel saturates, charge can spread to neighbouring pixels (an effect known as blooming). Most popular imaging device, due to their low noise and high sensitivity. CCDs often have thick, fully depleted substrates and epi-layers.

Active Pixel Sensors Photon to Voltage conversion done within pixel Integrated electronics in circuit to suit applications (eg discriminator, flags) Low mass, low power cameras. Faster frame rates achievable. Charge sensed inside pixel... No charge transfer. Greater radiation tolerance. Design reduces streaking that can be prevalent in CCDs Andrew Blue PSD9 14/9/11 4

Motivation for CMOS APS The CMOS APS have fast frame rates. –Fastest CCD operation 0.1Hz –Fastest full frame CMOS APS operation 20Hz On-chip processing can combine the image sensor and image processing functions, increasing speed and reducing physical size. CMOS APS can read out a Region of Interest (RoI) for even faster frame rates CMOS APS are cheaper to fabricate CMOS APS do not have to be operated at low temperatures for reasonable signal to noise performance. They can be backthinned for improved detection of UV photons Andrew Blue PSD9 14/9/11 5 How does APS compare to CCD’s for direct detection of soft X-rays?

Vanilla APS Made as part of the M-I 3 RC-UK Basic Technology grant 520x  m pixels (1.3cm x 1.3cm) A readout rate of 20Hz – 0.1 Hz (full frame mode) Region of Interest (ROI) readout –Readout rate of 24kHz for 6x6 region The sensor designed to allow back thinning Designed full well capacity of ~100k e - The pad layout allows for the butting of sensors on two sides. NOT designed specifically for synchrotron applications 6 Andrew Blue PSD9 14/9/11

Characterisation Before any demonstrator use, sensors must be fully characterised for –Noise Shot Noise FPN Read Noise Dark Current –Gain –Full Well Capacity –Linearity –Quantum Efficiency –Stability Similar for both CCD and CMOS devices (mostly) Imaging devices => tested with photons (not conventional “particle physics” approach) Andrew Blue PSD9 14/9/11 7

Noise Shot Noise »The standard deviation for the number of interactions per pixel »Fundamentally related to the charge generated by a photon’s interaction with a semiconductor Fixed Pattern Noise »In sensors, some pixels collect charge more efficiently than others »This results in pixel-to-pixel sensitivity differences »This noise is “Fixed” as it is not random, but is spatially the same pattern from image to image Read Noise »Defined as any noise source encountered in imagers which is not a function of signal Andrew Blue PSD9 14/9/11 8

Photon Transfer Curve The PTC (or Photon Transfer curve) is the most curial and important analytical technique for imaging sensors The rms noise is plotted as a function of average signal at different light levels (or exposure times) The plot is made in log-log scale Andrew Blue PSD9 14/9/11 9

PTC Measurements Illuminations achieved using super-bright, narrow bandwidth LED (520nm) Coupled with diffuser produced uniform illumination (<1% dev.) The light intensity was varied by changing the voltage applied to the LED until saturation 100 Frames at each illumination stage Shot Noise area extrapolated from fit to calculate the Camera Gain Constant K (e - /DN) ‘Comparison of Methods for Estimating the Conversion Gain of CMOS Active Pixel Sensors’ ‘SE Bohndiek, A Blue, A Clark et al IEEE SENS J 8 (2008) pg Andrew Blue PSD9 14/9/11

11 Lab Measurements Example PTC with FPN and read noise removed Mean Gain: K = 7.3 e - /ADU

Backthinned – QE QE Improved in the low visible and UV “bump” at 230nm is actually beginning of absorption of UV in air Sensor used was backthinned using a mixed process of polishing, wet etch, and plasma etch Sensor was then flipped to allow detection from back side 12 Andrew Blue PSD9 14/9/11

13 Sensors Under Test CCD used: Princeton PIXIS-XO: 2048B –High Capacity and Low Noise modes for high or low flux applications. –Each mode has 3 different gain modes. APS used: Vanilla, developed by a UK funded collaboration (MI 3 ) –Backthinned for enhanced UV detection. –Faster frame rates Princeton PIXIS CCDVanilla CMOS Pixel Size 13.5 μm 25 μm Number of Pixels2048 x x 520 Total Dimensions2.8 x 2.8 cm1.3 x 1.3 cm Frame Rate0.1 – Hz20Hz – 0.1 Hz Full Well Capacity e - Operating ModesLow Noise Input High Capacity Output Analogue Readout Digital Readout

Andrew Blue PSD9 14/9/1114 Diffraction Experiment Experiment performed at Diamond Light Source, Beamline I06. A permalloy sample was used to create a diffraction pattern. –Permalloy is a Nickel-Iron alloy, used here as a representative test sample. Soft X-rays (700 eV) diffracted. Sensor was back-illuminated and kept in a vacuum. CCD kept at -55°C, Vanilla cooled from 20°C to -20°C. Noise, Signal to Noise, Peak to Trough, Dark Current and charge collect were all measured with both sensors. Detector Beamline Permalloy Sample

Andrew Blue PSD9 14/9/1115 CCD Diffraction Pattern 10s Integration Time Low Noise Mode, -55°C Dashed line is where the line profile is taken from. Solid square indicates the area the vanilla sensor covered. 300s integration time shows some blooming in saturated pixels. Ratio of peak height to inter-peak average give a Peak-to-Trough value.

Andrew Blue PSD9 14/9/1116 CCD Diffraction Pattern 300s Integration Time Low Noise Mode, -55°C Dashed line is where the line profile is taken from. Solid square indicates the area the vanilla sensor covered. 300s integration time shows some blooming in saturated pixels. Ratio of peak height to inter-peak average give a Peak-to-Trough value. Peak Trough

Andrew Blue PSD9 14/9/1117 Vanilla CMOS Diffraction 10s Integration Time Digital Mode, -10°C Longest integration time shows no blooming when saturated. Shortest integration time can still identify all peaks. Relative peak heights the same regardless of frame rate

Andrew Blue PSD9 14/9/1118 Vanilla CMOS Diffraction Digital Mode, -10°C 0.05s Integration Time Longest integration time shows no blooming when saturated. Shortest integration time can still identify all peaks. Relative peak heights the same regardless of frame rate

Andrew Blue PSD9 14/9/1119 Noise Common Mode Noise removed via subtraction of 2 consecutive frames and pedestal subtraction. Statistical variation of resultant frame is Read Noise and Shot Noise. Vanilla CMOS APS noise increases greatly at -20°C –Component(s) not designed for lower temperatures?

Andrew Blue PSD9 14/9/1120 Signal to Noise Signal to Noise ratio calculated based on the charge collected from an unsaturated spot. Signal to Noise ratio increases linearly with integration time Princeton CCD maintained at a temperature of -55°C. S/N ratios calculated then averaged for different modes. Vanilla CMOS APS S/N calculated at -10°C in Digital mode.

Andrew Blue PSD9 14/9/1121 Summary of Results Princeton PIXIS CCDVanilla CMOS APS Frame Rate 0.1 Hz – Hz20 Hz – 0.1 Hz (300fps ROI) Gain High Capacity mode – ~15e - /ADU Low Noise mode – ~3e - /ADU Digital – 7e - /ADU Operating Temperature -55°C-10°C Read Noise HC mode - 50e - LN mode - 20e - 28e - Peak to Trough 10 2 – – 10 3 Signal to Noise 10 4 – – 10 4

Andrew Blue PSD9 14/9/1122 Conclusions Vanilla CMOS detector, at - 10°C, showed comparable noise performance to the Princeton CCD. –Maximum noise of 50e - for both CCD and 28e - for Vanilla CMOS APS At comparable frame rates (0.1Hz), both detectors showed similar S/N levels Charge collected increases linearly with integration time. Further research remains to be completed on characterising the Region of Interest and higher frame rates Future specially designed CMOS APS could have kHz frame rates with a comparable S/N.

Andrew Blue PSD9 14/9/1123 Dark Current Dark images taken at a series of frame rates, for each readout mode and temperature. Gradient of mean dark signal against integration time gives dark current. Dark current should be linear on a log-scale. Digital mode’s on-chip electronics affected by cooling. Mean Frame

Imager Noise Total noise imageFixed noiseStatistical noise Andrew Blue PSD9 14/9/11

Camera Gain Constant For a ‘black box’ camera system whose input exhibits shot noise characteristics A B K (A/B)   = A 1/2  B ≠  A A sensitivity constant K(A/B) relates and transfers output signal and noise measurements to the input. In other words A= BK(A/B) and  A =  B K(A/B) Substituting the above 2 equations into   = A 1/2 and we get K(A/B)= B/  2 B Input to an imaging sensor is measured in electrons (e - ), and the output is measured in Digital Numbers (DN) Andrew Blue PSD9 14/9/11

Camera Gain Constant Input to an imaging sensor is measured in electrons (e - ), and the output is measured in Digital Numbers (DN) Andrew Blue PSD9 14/9/11