Antoine JUNIQUE, Gabriele FIORENZA, Satoshi YANO 1 Laser soldering test 11/03/2014.

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Presentation transcript:

Antoine JUNIQUE, Gabriele FIORENZA, Satoshi YANO 1 Laser soldering test 11/03/2014

Antoine JUNIQUE, Gabriele FIORENZA, Satoshi YANO 211/03/2014 SampleFlexPoly thicknesschipcontactgasdaisy-chain resistance SA1Test 15, new Ni/Au75 µmTMEC new Ni/Au50/50N/H125 Ω SA2Test 15, new Ni/Au75 µmTMEC new Ni/Au50/50N/H115 Ω SA1Test 15, new Ni/Au75 µmTMEC new Ni/Au50/50Vacuum160 Ω SA1Test 1575 µmTMEC new Ni/Au50/50Vacuum84 Ω SA2Test 1575 µmTMEC new Ni/Au50/50Vacuum80 Ω SA1Test 11 new production50 µmTMEC new Ni/Au50/50Vacuum94 Ω SA2Test 11 new production50 µmTMEC new Ni/Au50/50Vacuum74 Ω SA1Test 11 new production50 µmTMEC new Ni/Au50/50Vacuum60 Ω SA2Test 11 new production50 µmTMEC new Ni/Au50/50Vacuum46 Ω SA3Test 11 new production50 µmTMEC new Ni/Au50/50Vacuum59 Ω SA1Test 11 new production50 µmTMEC new Ni/Au48/50Vacuum SA1Test 11 new production50 µmTMEC 3 produc50/50Vacuum39 Ω SA1Test 11 new production50 µmTMEC new Ni/Au49/50Vacuum Laser soldering test Single chip samples soldered (50 contacts, 200 um diameter) since 4/2/2014: Pad-chips (TMEC) with different cleaning procedures prior to Ni/Au plating at CERN FPC: Test15 produced by Exception, UK, Test11 produced at CERN 650 solder contacts 3 failures (understood)

Antoine JUNIQUE, Gabriele FIORENZA, Satoshi YANO 311/03/2014 Issue understood Cracks in the Al/Ni surface (TMEC) Change in the plating procedure at CERN TMEC 3 rd production pad surfaceCERN 1 th Ni/Au platingCERN 2 rd Ni/Au plating Cracks

Antoine JUNIQUE, Gabriele FIORENZA, Satoshi YANO 411/03/ C° Use one form per sample to note sample specifics and laser soldering parameters: i.e. Profile used Integrated power spectrum (PI) QA form 500 %s < PI 400 %s < PI < 499 %s 300 %s < PI < 399 %s PI < 299 %s Integrated power C° Laser Power (%)

Antoine JUNIQUE, Gabriele FIORENZA, Satoshi YANO 511/03/2014 Laser soldering QA form ( SA1)

Antoine JUNIQUE, Gabriele FIORENZA, Satoshi YANO 611/03/2014 Laser soldering QA form ( SA1)

Antoine JUNIQUE, Gabriele FIORENZA, Satoshi YANO SA1-PAD SA1-PAD SA3-PAD42 PI:756 %s SA1-PAD34 PI:434%s SA1-PIN18 PI : 766 %s SA1-PIN48 PI : 448 %s 11/03/2014 Laser soldering test

Antoine JUNIQUE, Gabriele FIORENZA, Satoshi YANO SA1-PAD SA1-PIN21 PI : 339 %s SA1-PAD SA1-PIN41 PI : 259 %s SA1-PIN37 PI : 398 %s SA1-PIN46 PI : 344 %s 11/03/2014 Laser soldering test

Antoine JUNIQUE, Gabriele FIORENZA, Satoshi YANO 911/03/2014 Laser soldering test, next steps: - Temperature profile improvement remove peaks temperatures reduce process time. - Newly plated pad chips - Al wafer plating at CERN (same as previous single chips, but on 6” wafer) - Test with pALPIDEfs pad-chip (e-less Ni/Au plating by PacTech) - Transport test of a soldered single chip sample - Soldering of a 9-chip IB module using 50-contact pad chips