Midterm Project 授課老師：劉承賢老師 Student : G923795 蘇家興.

Slides:

Advertisements

Similar presentations

MICROWAVE FET Microwave FET : operates in the microwave frequencies

Advertisements

NEW SENSING DEVICES FOR IMPROVING THE QUALITY OF LIFE Interest in FP 6 call: 'Nanotechnologies and nanosciences, knowledge-based multifunctional materials.

EE 4BD4 Lecture 15 Strain ( force) Gauges, pressure sensors and Load Cells 1.

BASIC SENSORS AND PRINCIPLES. ① Strain gages Measurement of extremely small displacement ① Potentiometers Translational and Rotational displacement ②.

Electronics and Cybernetics 1 Denne forelesningen Membranbaserte piezoresistiv trykksensor (våtetset) Stressfordelingen Piezoresistivitets tensoren ”Vanlig”

Melih Papila, Piezoresistive microphone design Pareto optimization: Tradeoff between sensitivity and noise floor Melih PapilaMark Sheplak.

Measurements Measurement of Pressure Part 2d: Measurement of Pressure 1Process Instrumentation Lecture NotesMay-15.

Pressure Methods Manometer Elastic Transducers Measuring Vacuum

PRESSURE SENSOR TECHNOLOGY

Lecture 2: Pressure Measurements

Piezoresistive sensors

FORCE-STRAIN-STRESS measurements.

MICROFLUIDIC SPATIAL CONTROL OF STEM CELL DIFFERENTIATION J. Kawada 1,3, H. Kimura 1,3, H. Akutsu 2,3, Y. Sakai 1,3 and T. Fujii 1,3 1 Institute of Industrial.

Chang Liu MASS UIUC Micromachined Piezoelectric Devices Chang Liu Micro Actuators, Sensors, Systems Group University of Illinois at Urbana-Champaign.

Applications: Pressure Sensors, Mass Flow Sensors, and Accelerometers CSE 495/595: Intro to Micro- and Nano- Embedded Systems Prof. Darrin Hanna.

Bulk MEMS 2014, Part 1 Types of MEMS Bulk MEMS: anisotropic wet or DRIE of bulk silicon SOI MEMS: DRIE or wet etching of SOI.

MEASURING STRAIN When a force is applied to a structure, the components of the structure change slightly in their dimensions and are said to be strained.

Pressure Measurement Why is it important?. Pressure Measurement Asses the situation –What is the range of pressures to be measured? –Is pressure dynamic.

Chang Liu Micro Actuators, Sensors, Systems Group

Homework # Lim Myeong-Jun. Index (Axid) Stress δ & ε Curve Cantilever Strain gage Gage factor Problem solution.

4. Microsystems in measurements of mechanical quantities- displacement, velocity and acceleration Mechanical quantities important in measurements with.

Transducers/Sensors: Sample Device Thermistor A thermistor is a temperature-sensing element composed of semiconductor material (typically a mix of metal.

HOW SMALL CAN WE TAKE THIS? - ART OF MINIATURIZATION.

1 5. Strain and Pressure Sensors Piezoresistivity Applied stress gives the change in resistance  = F/A  =  x/x  R/R (stress) (strain) In the case of.

4. ELECTROSTATICS Applied EM by Ulaby, Michielssen and Ravaioli.

Lead zirconate titanate/polyurethane(PZT/PU) composite for acoustic emission sensors W.K Sakamoto,P.Marin-Franch, D.Tunicliffe and D.K Das-Gupta Universidade.

Spring 2005ISAT 253 Transducers and Sensors II Monday, March 21.

1 CMOS Temperature Sensor with Ring Oscillator for Mobile DRAM Self-refresh Control IEEE International Symposium on Circuits and Systems, Chan-Kyung.

Building a Micro Pressure Sensor in the STEM Classroom

MEDICAL INSTEUMENTATIO N. 동서의료공학과 정 진 웅.

1 Absolute Pressure Sensors Z. Celik-Butler, D. Butler and M. Chitteboyina Nanotechnology Research and Teaching Facility University of Texas at Arlington.

Medical Instrumentation II. 1. (Axial) Stress On the surface, the (average) force per unit area is denoted as σ : “Stress” (cf. pressure) M y x A Medical.

Measurements of Piezoresistive Coefficients in Lightly Doped (111) Silicon Chun Hyung Cho & John Sunwoo Electrical & Computer Engineering Auburn University.

TNO Industrial Technology 4M Network of Excellence Subtask 11.1b Non-silicon, low-cost physical sensors.

HyungGu Park Joon-Sung Park YoungGun Pu Yongnam Kim #Kang-Yoon Lee Department of Electronic Engineering, Konkuk University Seoul, Korea,

Isotropic Anisotropic

Dept. of Biomedical Engineering YOUNHO HONG RESISTIVE SENSORS.

Enabling Nanotechnology Professors: Dr. Arif Sarwat Mr. Neil Ricks Educators: Henry Arendse Kent Landon Ebonie Williams.

Paper Based Partially Disposable MEMS Smart Bandage

1 M. Chitteboyina, D. Butler and Z. Celik-Butler, Nanotechnology Research and Teaching Facility University of Texas at Arlington

13 Carbon Microphone Marco Bodnár For many years, a design of microphone has involved the use of carbon granules. Varying pressure on the granules.

Humidity Sensors Tests for F-Pixel

THERMAL SENSORS 指導教授 : 吳坤憲老師報告學生 : 蕭傑穎.

Graphene Magnetic Sensor

Gonzales, Jamil M. Tengedan, Billy R.

BASIC MECHANICAL SENSORS AND SENSOR PRINCIPLES. Definitions Transducer: a device that converts one form of energy into another. Sensor: a device that.

Differential Equations Linear Equations with Variable Coefficients.

Dan O. Popa, Intro to EE, Freshman Practicum, Spring 2015 EE 1106 : Introduction to EE Freshman Practicum Lab-Lecture 7: Strain gage and Wheatstone Bridge.

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Magnetic Czochralski silicon as detector material J. Härkönen, E. Tuovinen,

Medical Instrumentation Ⅱ 동서의료공학과 이건우 -Sensor-

BUILDING A MICRO PRESSURE SENSOR IN THE STEM CLASSROOM Matthias W. Pleil, Ph.D. PI – Southwest Center for Microsystems Education University of New Mexico.

WHEATSTONE BRIDGE OVERVIEW APPLIED APPROACH! Wheatstone Bridge Overview Learning Module.

(Chapters 29 & 30; good to refresh 20 & 21, too)

Pacific school of Engineering Sub: I.P.C Topic: Pressure measurement Guided by Piyush modi Mayani Chintak Sudani Dhrutik Bhikadiya.

Department of Optical Engineering Zhejiang University Department of Optical Engineering Zhejiang University Advanced Sensor Technology Lecture 6 Jun. QIAN.

Pressure Sensors There are also multiple technology used to appear up with a pressure sensors. Endevco group supply pressure sensors and devices an array.

28/09/2016 TE-SM/Haiying GuoSDE3 Customer Presentation Pressure sensors SDE 3 1.

Grating and diode laser 劉子維指導老師鄭王曜. Grating Equation m = d (sin  + sin  ), Gm = sin  + sin , where G = 1/d is the groove frequency or groove density,

Engineering Measurements

5. Strain and Pressure Sensors

Measurement of Pressure

Date of download: 11/4/2017 Copyright © ASME. All rights reserved.

its methods and applications

Mechanical Sensors in Biomedicine

MEMS TECHNOLOGY By Rogerio Furlan.

Prepared by Dr. Mohamed Ahmed Awad

Heat Conduction in Solids

BONDING The construction of any complicated mechanical device requires not only the machining of individual components but also the assembly of components.

Solve the differential equation using the method of undetermined coefficients. y " + 4y = e 3x 1. {image}

Solve the differential equation using the method of undetermined coefficients. y " + 9y = e 2x {image}

Presentation transcript:

Midterm Project 授課老師：劉承賢老師 Student : G 蘇家興

Abstract Piezoresistive Effect Design of Piezoresistive Pressure Sensor Parameters of Commercial Product

Piezoresistive Effect Variation of resistance caused by stress (1) Piezoresistance matrix for (1 0 0) crystal (2)

Piezoresistive Effect Change in resistance (3) (for diffused resistors with longitudinal stress and transverse stress) Piezoresistive Coefficient (4)

Piezoresistive Effect From the equation (2)(3)(4), the resistance equation(5) of piezoresistor

Design of Piezoresistive Pressure Sensor Piezoresisitive Sensor Bulk Piezoresistive Sensor Commercially useful Surface Mounted Piezoresistive Sensor Experimental

Design of Piezoresistive Pressure Sensor

Bulk Piezoresistive Pressure Sensor A thin monocrystaline silicon membrane Silicon diaphragm Substrate Elastic material

Design of Piezoresistive Pressure Sensor

Differential Voltage Output of Pressure Sensor (6) Sensitivity of pressure sensor (7)

Design of Piezoresistive Pressure Sensor Operation Parameters of Pressure sensor

Design of Piezoresistive Pressure Sensor Parameters of Membrane Parameter Size of the membrane 1500*1500*100 um (L*W*H) Size of the piezoresistor350*5*1 um Spacing between the piezoresistor and the silicon edge 50 um

Parameters of Commercial Product

1kPa=0.145Psi

Parameters of Commercial Product

Reference Ranjit Singh, Low Lee Ngo, Ho Soon Seng, Frederick Neo Chwee Mok. A Silicon Piezoresistive Pressure Sensor.IEEE(2002). William P. Eaton, James H. Smith, David J. Monk, Gary O’Brien, and Todd F. Miller. Comparison of Bulk- and Surface- Micromachined Pressure Sensors. Micromachined Devices and Components, Proc SPIE, Vol 3514, p. 431.

Reference Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

Thank You