WSO/UV-LSS Detector with large dimension MCP Baosheng Zhao* National Astronomical Observatories of CAS *

Contents 1.Research Bases 2. Project Demonstration & Design 3. Key Technologies and Research Contents

1. Bases EUV (30.4 nm) Imager Based on WSA Detector - Supported by the Directional Project of Knowledge Innovation Project of ChineseAcademy of Sciences

1. Bases Schematic Diagram of the System

Curved MCPCurved MCP Curvature Radius: 70mm Effective Area: φ50mm Thickness: 0.8~1mm; Gain: Bases Patent Certificate Photo of the Curved MCP

1. Bases The planar structure sketch, entire and local magnified photos of WSA collector (from left to right)

Schematic of WSA Collector 1. Bases

Gain Distribution

1. Bases Image of Dark-count Gain Distribution of Dark-count

1. Bases Imaging Result in our lab

1. Bases 1024×1024,spatial resolution superior to 150μm (a)Used WSA;(b)used CCD Camera

Photocathode: CsI UV Image Intensifier(110~200nm) 1. Bases

2. Project Demonstration & Design Requirements of the spacial weak UV detecting: 1) Solar Blind; 2) Photon Counting Mode; 3) High Detecting Quantum Efficiency; 4) High Local Dynamic Range.

2. Project Demonstration & Design Detecting Wavelength Range: 110nm-320nm Photocathode: 110nm-175nm, CsI 170nm-320nm, Cs n Te Schematic of the Detector

2. Project Demonstration & Design Rectangle Profile of Detector dimension : 150X50X40(mm 3 ) Input dimension: 106X6(mm 2 ) Spatial resolution: 40μm

2. Project Demonstration & Design Profile of Detector

2. Project Demonstration & Design Technics of Vacuum Shell Design Heat treatment Ceramic metallization Nickel deposition Laser soldering Leak detection Inspection /storage Metal parts custom-making Ceramic parts custom-making Final assembly Heat treatment

2. Project Demonstration & Design Technics of Mg 2 F Window Design Optical manufacture Nickel deposition Photolithography Inspection Indium sealed edge metallization （ NiCr ＋ Au ）

2. Project Demonstration & Design WSA Collector Design 1) MCP – Ge Layer – WSA Collector 2) MCP – WSA Collector Design Draft of the WSA Collector

Curved MCP 2. Project Demonstration & Design Key Technological Indexes Effective Area: 106×6 mm 2 Size: 112×12 mm 2 Gain: 10 4 Pore Diameter: 12.5 micron Ratio of Length to Diameter : 40:1 Thickness: 0.5 mm Resistance: 40 ～ 80MΩ Curvature Radius: 1000mm

2. Project Demonstration & Design Photocathode a) 100 － 175nm photocathode b) 170 － 320nm photocathode CsI Cs 2 Te

2. Project Demonstration & Design Electronic Readout Subsytem

 High quantum efficiency and large format photocathode preparation technology;  Cylinder MCP preparation technology;  High resolution WSA electron collector preparation technology;  High voltage power supply with low ripple and high stability and control circuit technology;  Low noise charge sensitive preamplifier, pulse shaping circuit, sample and hold circuit, AD convertor, DSP and FPGA digital technologies;  Detector calibration technology. 3. Key technologies and research contents Key technologies ：

 LSS detector scheme;  Detector structure design;  Detector electro-optical system design;  Spherical (curved) surface MCP manufacture;  WSA structure design;  Detector electron read-out system design;  High voltage power supply design with high stability and low ripple;  Auto gain control circuit system design for high voltage power supply;  Detector system calibration. 3. Key technologies and research contents Research contents ：

Thank you for your attention!