CERN ISOLDE facility 1 HIE ISOLDE – Workshop 2013 Targets and Front Ends “A new modulator system” Contribution: by T.Fowler, J.Schipper, B.Bleus, T.Gharsa/TE-ABT-EC.

Slides:



Advertisements
Similar presentations
Compact IGBT Modelling for System Simulation Philip Mawby Angus Bryant.
Advertisements

3.1 Ideal Diodes Forward bias (on) Reverse bias (off)
Chapter 7 Operational-Amplifier and its Applications
OFFSHORE RENEWABLE PLANT HVDC POWER COLLECTOR AND DISTRIBUTOR
MICE Refurbishment of CERN RF equipment for MICE M. Vretenar, CERN AB/RF.
Chapter 9 Practical Application Issues of Power Semiconductor Devices
CERN ISOLDE facility 1 CATHI Final Review Meeting BARCELONA - SPAIN High Voltage and Front End prepared by R.A.Barlow TE-ABT-EC CERN Acknowledgement: B.
EKT214 - ANALOG ELECTRONIC CIRCUIT II
© 2012 Pearson Education. Upper Saddle River, NJ, All rights reserved. Electronic Devices, 9th edition Thomas L. Floyd Electronic Devices Ninth.
Development of Solid State Long Pulse Klystron Modulators
Linac 6575 Modulator PFN Charging Power Supply Upgrade Minh Nguyen December 5, 2012.
DC-DC Fundamentals 1.2 Linear Regulator. What is a Linear Regulator? The linear regulator is a DC-DC converter to provide a constant voltage output without.
Electronics 1 Lecture 7 Diode types and application
Copyright © 2008 Rockwell Automation, Inc. All rights reserved. Direct-to-Drive Technology Product Feature Overview.
1 Fly-back Converter fall Basic Topology of a Fly-back Converter.
Parallel LC Resonant Circuit Consider the following parallel LC circuit: –Treating as a voltage divider, we have: –Calculate the (complex) impedance Z.
1 Task 19 SIS100_3: Semiconductor RF Gap Switch P. Hülsmann Problem Description Beam dynamics simulations have shown that the impedance of the.
Electronics for PS and LHC transformers Grzegorz Kasprowicz Supervisor: David Belohrad AB-BDI-PI Technical student report.
UNIT-1 Rectifiers & Power Supplies. Rectifier A rectifier is an electrical device that converts alternating current (AC), which periodically reverses.
Plans for injection/extraction R&D S. Guiducci INFN-LNF KEK - ILCDR07, Dec 207.
CHAPTER 11 Op-Amp Applications. Objectives Describe and Analyze: Audio mixers Integrators Differentiators Peak detectors Comparators Other applications.
ANALOG CIRCUIT AND DEVICES 10/7/ Semester I 2013/2014 Course Code: EEE 3123.
Design and operation of existing ZS B.Balhan, J.Borburgh, B.Pinget B.BalhanDesign and operation of existing ZS SPS ZS Electrostatic Septum Upgrade Review.
Design and Technical Challenges of the ILC Small Angle Interaction Regions October 19 th, 2006J. Borburgh, CERN, AB/BT Electrostatic separator limits With.
P-bar d-cel: keV antiproton pulses David Lunney CSNSM (IN2P3-CNRS) Université de Paris Sud, Orsay  introduction and concept  p-bar d-cel simulations.
CERN ISOLDE / HIE ISOLDE 1 Isolde Target Modulator Prototype development prepared by T. Gharsa TE-ABT-EC CERN.
HVPS Upgrade for ALS Storage Ring RF System -Disconnect Switch Status
Power Protection for Staves/Supermodules Two Approaches Purpose of circuit: Provide an alternate current path for serial power current on the module level.
Chapter 6 Voltage Regulators By En. Rosemizi Bin Abd Rahim EMT212 – Analog Electronic II.
Instrumentation & Power Electronics
19-September-2007 Helsinki EURISOL-EURONS Town Meeting 1/6 High-Performance Pulsed-Power for Radioactive Ion Beams HP 3 RIB Luis Redondo ISEL, IST, CFNUL,
Simulation results for powering serial connected magnets Daniel Siemaszko, Serge Pittet OUTLINE : Serial configuration of full rated converters.
LIU-SPS ZS Electrostatic Septum Upgrade Review held on M.J. Barnes & T. Kramer.
Discussion and preliminary conclusions LIU-SPS ZS Electrostatic Septum Upgrade Review M.J. Barnes.
ELENA Fast Deflectors Generators N.Voumard, T. Gharsa.
EMT212 – Analog Electronic II
Modulators for DB klystrons: requirements and plans for developments Serge Pittet, David Nisbet TE EPC.
Schottky Barrier Diode One semiconductor region of the pn junction diode can be replaced by a non-ohmic rectifying metal contact.A Schottky.
Pixel power R&D in Spain F. Arteche Phase II days Phase 2 pixel electronics meeting CERN - May 2015.
22 Set 2009 EPPC 09 CERN September /14 Solid-State MARX Type Circuit for the ISOLDE Target Voltage Modulator L.M. Redondo*, J. Fernando Silva.
The way to fast and "loss-free" SPS kickers E. Gaxiola With contributions from AB-BT-KSL section and F. Caspers, T. Kroyer, M. Timmins, J. Uythoven.
Advances in High Current and Resistance Measurements to 11,000 Amps and Higher Guildline Instruments Limited.
Long Pulse Klystron Modulators SML (Stacked Multi-Level) topology
New prototype modulator for the European XFEL Project (DESY) Pulse Step Modulator (PSM) Technology for long pulse applications.
CLOSED LOOP SPEED CONTROL OF DC MOTOR WITH PWM TECHNIQUE
PCAR Precision In Practice 1 Precision In Practice Achieving the best results with precision Digital Multimeter measurements Paul Roberts Fluke Precision.
The Working Theory of an RC Coupled Amplifier in Electronics.
V Semester (Electrical)
Types Of Thyristors And Their Applications
Presentation CERN SPAIN | ITALY | FRANCE | GERMANY | MEXICO | USA | BRAZIL | UAE | QATAR | OMAN | SAUDI ARABIA jema.es.
CERN LHC RF Power Systems
Different Types of Voltage Regulators with Working Principle.
MKDV upgrade LIU-SPS ABT meeting V. Senaj, L. Ducimetiere, P. Faure November 4 th 2014.
Gate Turn On Turn Off Thyristors. What is a thyristor? Thyristors are power semiconductor devices used in power electronic circuits They are operated.
Energy recovery in depressed collector of klystron operating in pulsed mode Mark Kemp, Aaron Jensen, Gordon Bowdon, Erik Jongewaard, Andy Haase and Jeff.
Xavier Bonnin and Davide Aguglia
Electronic Devices Ninth Edition Floyd Chapter 17.
Development of a Marx-Generator for the drive beam electron gun
DC/DC Converter Flexibility Enables Adding Noise Reduction Circuitry
Technical Session CERN ISOLDE – Workshop 2016
DC-DC PWM Converters Lecture Note 5.
Fault detection Lecture (3).
Modulators - Inductive adder. Technical description.
the CERN Electrical network protection system
TCM PS – SPS Thyratron Power Trigger Consolidation
Laser activated thyristor. Technical description.
General presentation about recent status of DRFS
COOLING OF POWER DEVICES
POWER SEMICONDUCTOR DEVICES OVERVIEW
Presentation On Schottky Diode. Course Code:3208 Course Title : Microwave radar and satellite communication lab Presented By Salma Akter BKH F.
Presentation transcript:

CERN ISOLDE facility 1 HIE ISOLDE – Workshop 2013 Targets and Front Ends “A new modulator system” Contribution: by T.Fowler, J.Schipper, B.Bleus, T.Gharsa/TE-ABT-EC prepared by R.A.Barlow (November 2013)

OUTLINE 2  Why modulate the target ?  Existing HV modulation characteristics  Existing HV modulator  The ISOLDE HT Room  Upgrade of existing modulator  Reasons for modulator upgrade  The Marx generator, the C modulator  HV test cage and current development  Behlke switch and a Behlke test bench  Current studies and conclusion

WHY MODULATE THE TARGET? 3  Ionisation around the target in air during and immediately after beam impact produces excessive loading on the power supply which reduces the target voltage level  To ensure extraction of short life-time isotopes this voltage is required to recover to its stable value within 10ms  Because of the limited power output of the high precision power supply the recovery time cannot always be respected  A modulation system is used in which the charge on the effective target capacitance is resonantly transferred to a buffer capacitor during the heaviest ionisation period ( few tens of us after beam impact) and re- established ~200us later on the target capacitance  Circuit losses requires the power supply to provide current for a further 6ms before full stable target voltage is obtained (±0.6V)

EXISTING HV MODULATION CHARACTERISTICS 4 Specifications:  Fast recovery from modulation  DC voltage stability for isotope mass selectivity H/W requirements:  High precision HV power supply Advantages of modulation:  Prevent HV breakdown  HV recovery time shortened Beam impact

EXISTING HV MODULATOR Modulation power supply (FuG) Modulation power supply (FuG) Precision power supply +/- 0.6V on 60kV (custom-design, ASTEC) Precision power supply +/- 0.6V on 60kV (custom-design, ASTEC) Commutating thyratron Target model 200nF buffer capacitor

ISOLDE HT ROOM

TENTATIVE UPGRADE OF THE EXISTING MODULATOR 7  Performance tests were carried out on a 60kV/40mA bi-polar power supply from Heinzinger as possible replacement solution of the custom-built ASTEC power supply  On most targets the recovery time specification was achieved however some targets result in 40-50ms recovery  The Heinzinger suffers from a thermal drift of tens of volts over the first few operating hours- implementation of an external feedback loop has been made to compensate for this

REASONS FOR MODULATOR UPGRADE  Increasing ionisation due to new target materials and neutron converters has stretched the limits on the voltage recovery time, >10ms  ASTEC power supplies more difficult to maintain and repair, these are no longer manufactured  Other modulator components are aging  HIE-ISOLDE intensities will add further stress onto ionisation impact

Proposed modulator variants: THE MARX GENERATOR MODULATOR 9 Marx generator prototype circuit developed in collaboration with Lisbon University, 10kV system. Tested at 3kV only.  Reduced voltages across individual devices  A good recovery time with a standard R-C load. Dynamic ionization effects are ignored  Control of fall and rise times possible to reduce risk of HV breakdown  Many devices, troubleshooting difficult  PS high current  Reliability  Trigger system complex  Expensive system

10  Simpler circuit  Monolithic HV semiconductor-based switch commercially available  Rapid recovery time  Flexible modulation time  Compact  Re-uses many passive components of present modulator tank HV semiconductor switch  Semiconductor switch is not a proven, mature technology  Fast rise time may increase probability of HV breakdown Proposed modulator variants: THE C MODULATOR

THE C MODULATOR – MECHANICAL OUTLINE 11  Three tier modular system  Easy maintenance  Basic external diagnostics  Sits in existing housing

DEDICATED HV TEST CAGE FOR ISOLDE MODULATOR 12 Technical characteristics  Modern HV test facility  Safety access system  Spacious (important for 60kV test)  Overhead crane  Static and dynamic load capability BUILDING 867, Prevessin, CERN

CURRENT DEVELOPMENT: C-MODULATOR kV 40mA 60kV 300 mA Inside the generator tank, 200nF Capacitor Bank 90kV Behlke switch + Behlke diode (FDA ) Dummy load Static + dynamic

THE BEHLKE SWITCH 14 Technical characteristics  Series-parallel MOSFET architecture  Control Unit  TTL level triggering 90kV Behlke Switch (MODEL HTS LCS) I p (max) = 100 ADC ( tp<200us,1%duty cycle ) On Res=32Ω. typ Tr (on) =15ns

TEST BENCH FOR A BELHKE SWITCH  High current measurement  Low current measurement  Switch voltage drop  Series resistor voltage drop  High precision voltage measurement Ross VD-270 matched pair HV dividers CT Stangeness, model 0.5V/A Hall effect transducer AAC, 905B-50 (0..50mA of dynamic range)

16 TEST BENCH IMPLEMENTATION  Voltage holding capabilities of the system  Voltage and current measurements linearity test  R ‘ON’ studies  Studies with dynamic load  Switch behavior when triggered  Di/Dt’s & Dv/Dt’s  Snubber circuits investigation

TEST BENCH MD AT ISOLDE 17  Aim to measure real target current and test robustness of Behlke switch.  Tested at 2 intensities levels (1x10 e13 p+ & 3x10 e13 p+)  ‘Cold’ and ‘Hot’ target measurements  Extraction Electrodes in/out position  Dynamic electrical load studies (with beam/no beam)  Target charging voltage  Dynamic load impedance of target  Mainly 30kV studies due to the hall effect current transducer saturating Behlke test bench setup at ISOLDE on the HRS target on HT1 slot, Use of worst case target, Uranium Carbide Target + Neutron converter (Tungsten) LEM CTSR-0.6P Measured current no beam With beam

MD RESULTS 18  The MD measurements showed that a ‘cold’ target or ‘heated’ target shows no difference in the dynamic loading of the modulator.  The extraction electrodes position, completely ‘out’ or ‘in’ gives no change in the dynamic loading i.e. the ion beam seems to have no effect on the loading of the HT sources. The peak current of 17A during beam impact was measured with the CT pick-up. The current decreases rapidly after 100us. Target leakage current 200us after beam impact Measured impact current Measured recovery current

CURRENT DEVELOPMENT 19  C-Modulator: Overcome the 30kV limitations of the Hall effect system, design of a saturation protection circuitry Test all possible configurations of switch topology (1,2 or 3) with power supplies and elements Characterisation of Heinzinger and Genvolt power supplies Investigation of series-protection diodes (inc. Behlke FDA ) for future modulator design  Other topologies and ideas:  Investigation of single switch operation,  Feed forward voltage loops,  Charge pumping mechanism  Controls for modulator on going elaboration

CONCLUSIONS 20  The Behlke test bench has proven to be an invaluable asset in determining the next generation of ISOLDE/HIE-ISOLDE modulator design.  The Behlke technology has demonstrated its ease of use, simple mechanical implementation and robustness. It has shown to be very capable of good linear performance, very satisfactory R on measurements and excellent repeatability on all measurements carried out.  Target ‘discharge’ time can be tailored to suit target types, a real ‘bonus’ compared to last type of modulator  Serviceability and repair should be simpler with the new modulator technology.  Prototype configuration and functionality still to be determined through R&D program!