指導教授：林志明老師研究生：林高慶學號：s

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指導教授：林志明老師研究生：林高慶學號：s95662002 A 1.8-V MONOLITHIC SIGE HBT POWER AMPLIFIER WITH A NOVEL PROPOSED LINEARIZING BIAS CIRCUIT Ping-Chun Yeh; Kuei-Cheng Lin; Lee, C.Y.; Hwann-Kaeo Chiou; Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on Volume 1, 6-9 Dec. 2004 Page(s):305 - 308 vol.1 指導教授：林志明老師研究生：林高慶學號：s95662002

Outline Abstract Introduction Linearizer schematics The schematic diagram of the power amplifier Performance summary and comparison Conclusions

Abstract Use TSMC 0.18 ㎛ SiGe HBT technology An output power over 20 dBm with a power-added efficiency higher than 42.4% under 1.8 volt operation for a 2 GHz power amplifier

Introduction With the emergence of SiGe HBTs as a new contender for RF and Microwave applications The liearizers using adaptive bias circuit were widely used in improving the both linearity and efficiency

Linearizer schematics

The simulation of shorting capacitor C

The simulation of impedance ratio (R1/R2)

The schematic diagram of the power amplifier

The simulation of the power amplifier

Performance summary and comparison

Conclusions The size effect of the impedance ratio are extensively investigated. A MOSFET junction capacitor to form an additional feedback control is proposed to obtain a significant improvement.