Owner: TUP Rev *D Cypress Introduces the Industry’s Fastest High-Density NVRAM Solution 16Mb nvSRAM New Product Introduction 16Mb nvSRAM New Product Introduction (Engineering)

Owner: TUP Rev *D The Global TAM 1 for Nonvolatile RAM (NVRAM) is forecast to be $590M in with a 10% CAGR through 2018 Cypress’s 16Mb NVRAM applications: Industrial Automation Computing and Networking Avionics and Defense Electronic Gaming Customers in these markets make high-performance systems that require instant and reliable data capture on power loss Customers prefer battery-free and energy-efficient systems Some customers require ONFI 3 -compatible NVRAM interfaces The current solution, Battery-Backed SRAM, cannot meet any of these requirements Take advantage of the upcoming sea change from Battery-Backed SRAM to NVRAM 1 Total Available Market 2 Web-Feet Research 3 Open NAND Flash Interface Standard Demand for Better Performance Is Driving Nonvolatile RAM Growth 3a 16Mb nvSRAM New Product Introduction (Engineering)

Owner: TUP Rev *D Cypress Is the NVRAM Market Leader 3b Cypress offers the largest portfolio of serial and parallel Nonvolatile Random-Access Memory products F-RAM™, the industry’s most energy-efficient serial NVRAMs nvSRAM, the industry’s fastest parallel NVRAMs Cypress offers a broad portfolio of the industry’s most energy-efficient and reliable F-RAM products F-RAM consumes 30% of the power of the most advanced EEPROM and offers 100 million times the endurance F-RAM densities range from 4Kb to 4Mb, with supply voltages from 2.0 V to 5.5 V SPI and I 2 C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages Real-time clocks and counters are also available on F-RAM products Cypress offers a wide range of the industry’s fastest parallel nvSRAM products Access times range from 20 ns to 45 ns with unlimited read/write cycle endurance Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltages Asynchronous x8, x16 and x32 SRAMs come in a wide variety of packages Integrated real-time clocks are also available on nvSRAM products Cypress: Was first to produce F-RAM and nvSRAM products and has more than 25 years of experience Continues to invest heavily in new products Is committed to providing products that meet the most rigorous automotive and military standards Assures long-term supply of F-RAM and nvSRAM products Has shipped more than 1 billion NVRAM units Cypress offers the industry’s fastest, most energy-efficient, highest-reliability NVRAM solutions to capture and protect the world’s most critical data 16Mb nvSRAM New Product Introduction (Engineering)

Owner: TUP Rev *D Parallel Nonvolatile Memory Terms Nonvolatile Memory (NVM) Memory that retains data on power loss Nonvolatile Random-Access Memory (NVRAM) A Nonvolatile Memory that allows direct access to stored data in any random order Write Endurance The number of times a Nonvolatile Memory cell can be rewritten before it wears out Silicon Oxide Nitride Oxide Silicon (SONOS) A transistor with a polysilicon gate (S), an Oxide Nitride Oxide (ONO) gate dielectric and a Silicon substrate (S) used to create a Nonvolatile Memory storage cell Nonvolatile Static Random-Access Memory (nvSRAM) Fast SRAM memory with a SONOS Nonvolatile Memory cell embedded in each SRAM cell to retain data on power loss Open NAND Flash Interface (ONFI) Standard An open interface standard that assures the compatibility and interoperability of NAND devices from different vendors Battery-Backed SRAM (BBSRAM) SRAM memory connected to a battery to retain data on power loss Restriction of Hazardous Substances (RoHS) A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components Redundant Array of Independent Disks (RAID) A storage technology that uses two or more disk drives for redundancy 4 16Mb nvSRAM New Product Introduction (Engineering)

Owner: TUP Rev *D Parallel NVM Design Problems 1. Many systems require fast Nonvolatile Memories with high Write Endurance Traditional EEPROM and flash Nonvolatile Memories have slow write times (>1 ms) and limited Write Endurance Low-power asynchronous SRAMs have fast, ~45-ns access times but require battery backup to store data on power loss Most NVRAMs do not offer an ONFI Standard, making them incompatible with many controllers 2. Conventional BBSRAM solutions force undesirable trade-offs Batteries require power-management circuits and firmware, which add system cost and increase complexity Coin cell batteries reduce reliability and have a limited lifetime, which mandates system maintenance and downtime Data is lost if the battery charge is drained before system power is restored, which mandates fast time-to-repair Batteries contain heavy metals that violate RoHS regulations 3. Many systems require accurate time-stamping and instant capture of large amounts of data The accurate external real-time clock chips used to time-stamp data add cost and complexity Conventional NVRAMs with more than 8Mb capacity are limited to 35-ns to 100-ns access times Cypress’s 16Mb nvSRAM solves all these problems Provides 25-ns read/write access time with unlimited Write Endurance Offers both high-speed asynchronous parallel and ONFI Standard 1.0-compatible interfaces Requires no batteries to retain data on power loss for unlimited periods, thus meeting RoHS regulations Stores data reliably on power loss without the need for external power-management circuits and firmware Offers an integrated, high-accuracy real-time clock 5 The Cypress 16Mb nvSRAM is the industry’s fastest high-density NVRAM. It reduces system cost and complexity by eliminating batteries and clock chips. 16Mb nvSRAM New Product Introduction (Engineering)

Owner: TUP Rev *D Parallel nvSRAM Is a Better Solution Battery-free parallel nvSRAM solution By choosing nvSRAM as your parallel Nonvolatile Memory solution… To produce more reliable solutions for mission-critical applications at a lower cost. Battery required to retain data on power loss 6 Extra board area for battery Standard SRAM memory Simplify a complex BBSRAM-based design… Industrial Automation Computing and Networking Avionics and Defense Electronic Gaming 16Mb nvSRAM New Product Introduction (Engineering)

Owner: TUP Rev *D 1 Low-power 16Mb asynchronous SRAM 2 Conditions: Max current, x16, 45 ns (nvSRAM), 45 ns (asynchronous SRAM), 45 ns (MRAM), 2.7 to 3.6 V, −40°C to +85°C 3 Based on the typical life span of a backup battery 4 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids Feature nvSRAM CY14B116 Asynchronous SRAM 1 + Battery R1LV1616HBG MRAM MR4A16B Access Time 25 ns45 ns35 ns Battery Requirement NoYesNo Active Write Current 2 75 mA50 mA150 mA RoHS Compliant YesNoYes Nonvolatile Retention 20 years5 years 3 20 years Magnetic Field Immunity Yes No 4 Real-Time Clock YesNo ONFI Standard 1.0 Interface YesNo Cypress 16Mb NVRAM Solution vs. Competition’s 7 16Mb nvSRAM New Product Introduction (Engineering)

Owner: TUP Rev *D nvSRAM Portfolio High Density | High Speed 64Kb - 256Kb 512Kb - 16Mb 1 Industrial grade −40ºC to +85ºC 2 Real-time clock 3 Open NAND flash interface Parallel nvSRAMSPI nvSRAM I 2 C nvSRAM Parallel nvSRAMSPI nvSRAM I 2 C nvSRAM CY14B116K/L 16Mb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14B116R/S 16Mb; 3.0 V 25, 45 ns; x32; Ind 1 RTC 2 CY14V116F/G 16Mb; 3.0, 1.8 V I/O 30 ns; ONFI x8, x16; Ind 1 CY14B116M/N 16Mb; 3.0 V 25, 45 ns; x16; Ind 1 RTC 2 CY14B108K/L 8Mb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14B104K/LA 4Mb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14B101KA/LA 1Mb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14V101LA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind 1 CY14B256KA/LA 256Kb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14V/U256LA 256Kb; 3.0, 1.8V I/O 35 ns; x8; Ind 1 CY14B108M/N 8Mb; 3.0 V 25, 45 ns; x16; Ind 1 RTC 2 CY14B104M/NA 4Mb; 3.0 V 25, 45 ns; x16; Ind 1 RTC 2 CY14E256LA 256Kb; 5.0 V 25, 45 ns; x8; Ind 1 CY14V104LA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind 1 CY14B101MA/NA 1Mb; 3.0 V 25, 45 ns; x16; Ind 1 RTC 2 CY14V101NA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind 1 CY14V104NA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind 1 CY14B064P 64Kb; 3.0 V 40 MHz SPI; Ind 1 RTC 2 CY14B256P 256Kb; 3.0 V 40 MHz SPI; Ind 1 RTC 2 CY14B512P 512Kb; 3.0 V 40 MHz SPI; Ind 1 RTC 2 CY14B101P 1Mb; 3.0 V 40 MHz SPI; Ind 1 RTC 2 CY14B064I 64Kb; 3.0 V 3.4 MHz I 2 C; Ind 1 RTC 2 CY14B256I 256Kb; 3.0 V 3.4 MHz I 2 C; Ind 1 RTC 2 CY14B512I 512Kb; 3.0 V 3.4 MHz I 2 C; Ind 1 RTC 2 CY14B101I 1Mb; 3.0 V 3.4 MHz I 2 C; Ind 1 RTC 2 STK11C Kb; 5.0 V 35, 55 ns; x8; Mil 4 STK12C Kb; 5.0 V 35, 55 ns; x8; Mil 4 STK14C Kb; 5.0 V 35, 45 ns; x8; Mil 4 4 Military grade −55ºC to +125ºC 5 Quad serial peripheral interface 6 Double Data Rate CY14V101QS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI 5 ; Ind 1 Ext. Ind 7 CY14V101PS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI 5 ; Ind 1 Ext. Ind 7 ; RTC 2 Higher Densities QSPI 5 nvSRAM NDA Required Contact Sales Higher Densities DDRx 6 nvSRAM NDA Required Contact Sales ProductionDevelopment QQYY Availability Sampling Concept Status NEW 7 Extended Industrial grade −40ºC to +105ºC 16Mb nvSRAM New Product Introduction (Engineering)

Owner: TUP Rev *D 16Mb Parallel nvSRAM Industrial automation Computing and networking Avionics and defense Electronic gaming Applications Async parallel interface: 25-ns access time, x8, x16, x32 buses ONFI Standard 1.0: 30-ns access time, x8 and x16 bus widths Unlimited read/write endurance One million store cycles on power fail Data retention of 20 years at 85ºC and 150 years at 65ºC Operating voltages: 3.0 V, 5.0 V; 1.8 V I/O Low standby (750 µA) and sleep (10 µA) currents Integrated, high-accuracy real-time clock (RTC) Industrial grade temperature Packages: 44-TSOP II, 48-TSOP I, 54-TSOP II, 165-FBGA Features Final Datasheet: 16Mb nvSRAM16Mb nvSRAM Collateral Block Diagram Sampling: Now Production:Now Availability SONOS Array SRAM Array Address Decoder Data Address Power Control VCAP 4 Store/Recall Control HSB 5 Recall Store x32 x21 Control Logic I/O Control Software Command Detect RTC XIN 1 XOUT 2 INT 3 3 Control 16 Mb Parallel nvSRAM 1 Crystal connection input 2 Crystal connection output 3 Interrupt output/calibration/square wave 4 External capacitor connection 5 Hardware Store busy 11 16Mb nvSRAM New Product Introduction (Engineering)

Owner: TUP Rev *D Here’s How to Get Started 1.Download the App Note: A Comparison Between nvSRAMs and BBSRAMsA Comparison Between nvSRAMs and BBSRAMs 2.Register to access online technical support: 3.Download the final datasheet: 16Mb nvSRAM16Mb nvSRAM 12 Programmable Logic Controller by Siemens Electronic Gaming Machine by IGT Router by Cisco Avionics Subsystem by Rockwell Collins 16Mb nvSRAM New Product Introduction (Engineering)

Owner: TUP Rev *D APPENDIX 15 16Mb nvSRAM New Product Introduction (Engineering)

Owner: TUP Rev *D nvSRAM Product Selector Guide 16Mb nvSRAM Part NumberInterface Access Time Bus Width Supply Voltage I/O VoltageRTCTempPackage CY14B116L-ZS25XIAsync Parallel25 nsx83.0 V No-40 to 85°C44-TSOP II CY14E116L-ZS25XIAsync Parallel25 nsx85.0 V No-40 to 85°C44-TSOP II CY14B116K-ZS25XIAsync Parallel25 nsx83.0 V Yes-40 to 85°C44-TSOP II CY14B116N-Z30XIAsync Parallel30 nsx163.0 V No-40 to 85°C48-TSOP I CY14B116N-Z45XIAsync Parallel45 nsx163.0 V No-40 to 85°C48-TSOP I CY14E116N-Z30XIAsync Parallel30 nsx165.0 V No-40 to 85°C48-TSOP I CY14B116N-ZSP25XIAsync Parallel25 nsx163.0 V No-40 to 85°C54-TSOP II CY14B116N-ZSP45XIAsync Parallel45 nsx163.0 V No-40 to 85°C54-TSOP II CY14V116F7-BZ30XIONFI nsx83.0 V1.8 VNo-40 to 85°C165-FBGA CY14V116G7-BZ30XIONFI nsx163.0 V1.8 VNo-40 to 85°C165-FBGA CY14B116N-BZ25XIAsync Parallel25 nsx163.0 V No-40 to 85°C165-FBGA CY14B116M-BZ45XIAsync Parallel45 nsx163.0 V Yes-40 to 85°C165-FBGA CY14B116S-BZ25XIAsync Parallel25 nsx323.0 V No-40 to 85°C165-FBGA CY14B116S-BZ45XIAsync Parallel45 nsx323.0 V No-40 to 85°C165-FBGA CY14E116S-BZ25XIAsync Parallel25 nsx325.0 V No-40 to 85°C165-FBGA CY 14 X 116 X X – XXX XX X X 16Mb nvSRAM Part Numbering Decoder Temperature Range: I = Industrial Package: ZS = 44-TSOP II, Z = 48-TSOP I, ZSP = 54-TSOP II, BZ = 165-FBGA Bus Width: L = x8, N = x16, S = x32, F = x8 NAND, G = x16 NAND Density: 116 = 16Mb nvSRAM Marketing Code: 14 = nvSRAM Company ID: CY = Cypress Voltage: B = 3.0 V, E = 5.0 V, V = 3.0 V, 1.8 V I/O Interface: Blank = Async Parallel, 7 = ONFI 1.0 Access Time: 25 = 25 ns, 30 = 30 ns, 45 = 45 ns Pb Content: X = Pb-free 16 16Mb nvSRAM New Product Introduction (Engineering)

Owner: TUP Rev *D References and Links Cypress Nonvolatile Products website: The source for all publicly available Nonvolatile Product documentation and collateral Cypress Nonvolatile Products roadmap: Cypress Nonvolatile RAM RoadmapCypress Nonvolatile RAM Roadmap For datasheets and NDA roadmap requests, contact your Cypress Sales Representative or Cypress Sales Application Notes: Nonvolatile Products Application NotesNonvolatile Products Application Notes Knowledge Base Articles: Nonvolatile Products Knowledge Base ArticlesNonvolatile Products Knowledge Base Articles Cypress nvSRAM Solution Examples: Cypress nvSRAM Solution ExamplesCypress nvSRAM Solution Examples 16Mb nvSRAM New Product Introduction (Engineering) 18

Owner: TUP Rev *D 16Mb nvSRAM Solution Value $10.50 $2.12 $3.70 $5.82 $9.93 $2.40 -$0.22 $0.12 $12.23 $28.55 Competitor Battery + Casing Power Management Circuit BOM Integration Value Field Battery Replacement Faster Access Time External Capacitor Board Space Saving Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 12% Total Savings: CY14B116N-Z25XI $25.12 $ Ku web pricing from Digikey 2 Supplier web pricing 3 $5.76 (four times in 15 years at $1.44 per battery), plus labor cost: $4.17 (four times in 15 years with labor at $50/hour and replacement time estimated at 75 seconds/battery) square centimeters at $0.01 per square centimeter on an eight-layer PCB 16Mb nvSRAM New Product Introduction (Engineering) Competitor Low-Power SRAM: Renesas R1LV1616RSA-5SI Price: $ BOM Integration Battery + casing: Panasonic CR Memory Protection Devices Inc. BH1000G-ND casing Price: $ Power management circuit: Maxim MXD1210ESA Price: $ Additional Value Field battery replacement cost 3 : Value Added: $9.93 Industry’s fastest access time (25 ns): Value Added: $2.40 External capacitor: 22 µF, 6.3 V, tantalum Value Lost: -$ Board space saving: Value Added: $0.12 4