CMOS Layout poly diffusion side view top view metal cuts

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Presentation transcript:

CMOS Layout poly diffusion side view top view metal cuts CSE 567 - Autumn 1998 - CMOS - 1

A View of Interconnect Layers CSE 567 - Autumn 1998 - CMOS - 2

Intel 4004 (1971) CSE 567 - Autumn 1998 - CMOS - 3

Pentium II (1996) CSE 567 - Autumn 1998 - CMOS - 4

Silicon in 2010 Die Area: 2.5x2.5 cm Voltage: 0.6 V Technology: 0.07 m CSE 567 - Autumn 1998 - CMOS - 5

CMOS Inverter Layout CSE 567 - Autumn 1998 - CMOS - 6

Layout 4-input NAND gate CSE 567 - Autumn 1998 - CMOS - 7

Standard Cell Design Methodology Example “stick diagram” CSE 567 - Autumn 1998 - CMOS - 8

Different Layouts are Possible Different layouts for x = CSE 567 - Autumn 1998 - CMOS - 9

The Barrel Shifter CSE 567 - Autumn 1998 - CMOS - 10

4x4 barrel shifter CSE 567 - Autumn 1998 - CMOS - 11

Logarithmic Shifter CSE 567 - Autumn 1998 - CMOS - 12

0-7 bit Logarithmic Shifter 3 Out3 A 2 Out2 A 1 Out1 A Out0 CSE 567 - Autumn 1998 - CMOS - 13

Latches CSE 567 - Autumn 1998 - CMOS - 14

Edge-Triggered Register (Master/Slave) CSE 567 - Autumn 1998 - CMOS - 15

Non-Overlapping Clocks CSE 567 - Autumn 1998 - CMOS - 16

Dynamic Register CSE 567 - Autumn 1998 - CMOS - 17

Registers and intervening logic Switches and/or gates compute new values to store on next clock cycle straightforward implementation CL 2 1 this circuit can use the entire clock cycle – no wasted time - a form of retiming CL CL 2 1 CSE 567 - Autumn 1998 - CMOS - 18

Memory – Static Register Cells 8-transistor cell bit bit' rd or wr (rd or wr)' sensing amplifier rd/wr' CSE 567 - Autumn 1998 - CMOS - 19

Memory – Dynamic Register Cells 4-transistor cell data-in data-out' wr dedicated busses for reading and writing rd dynamic charge storage must be refreshed CSE 567 - Autumn 1998 - CMOS - 20

Memory – Dynamic Register Cells (cont'd) 3-transistor cell pre-charge data-out' to generate 1 outputs data-in data-out' wr no p-type transistors yield a very compact cell rd CSE 567 - Autumn 1998 - CMOS - 21

Memory – Dynamic Register Cells (cont'd) 1-transistor cell precharge to intermediate voltage level storage capacitor is one end of transistor charge sharing with bus capacitance (Ccell << Cbus) destructive read (must immediately write back) extra demands on sense amplifier to detect small changes in bus charge CSE 567 - Autumn 1998 - CMOS - 22

Read-only Memory Cells To store constants or other invariant data Popular for control implementation bit1 bit2 bit3 read1 read2 programmable logic array structure (exploits distributed NOR gate structure) CSE 567 - Autumn 1998 - CMOS - 23

Multi-ported Register Cells Add more input and output transistors (similar for all variations) Not usually done for 1-transistor cells bus1 bus2' row-bus1 row-bus2 bus2 bus1' CSE 567 - Autumn 1998 - CMOS - 24

Random access memory Decoding logic to select word Attempt to make critical lines (data lines) as short as possible Square aspect ratio rather than rectangular 2m k-bit words per row 2n by 2m*k bits d e c o d e r n memory cell array 2n rows address of word (n+m bits) m multiplexer ( 2m :1) k bits wide (k bits/word) CSE 567 - Autumn 1998 - CMOS - 25

Decoders Decoder looks like AND-plane of ROM (all input combinations) usually replicated throughout array d e c o d e r memory cell array n rd/wr (row select) CSE 567 - Autumn 1998 - CMOS - 26 bit bit'

Multiplexers Decode address into one-hot control signals Each bit passes through single n-device or pass gate note: bits of word in row are interleaved word1 word2 word3 word4 bit1 bit2 from a decoder CSE 567 - Autumn 1998 - CMOS - 27

Content-Addressable Memory Compares input to all entries in memory in parallel applications: pattern recognition, TLBs, etc. Require and encoder to indicate where a match occurred perform inverse function of decoders take a one-hot collection of signals and encodes them e n c o d e r content addressable memory cell array n 2n rows m bits m CSE 567 - Autumn 1998 - CMOS - 28

Content-Addressable Memory Cells Read and write like normal 6T memory cell Match signal is precharged to 1, pulled to 0 if no match send data on bit' and data' on bit for matching match remains 1 if and only if all bits in word match row select match bit bit' CSE 567 - Autumn 1998 - CMOS - 29