1 Radiation Effects on Emerging Electronics Materials & Devices MURI Annual Review Welcome & Thanks for Being Here! AFOSR PM: Kitt Reinhardt (703) This MURI Represents AFOSRs FlagShip Radiation Effects Electronics Program AF & DoD Requires SOTA Performance Electronics that are Reliable & Rad-Hard to Maintain Asymmetrical Warfighter System Capabilities Advantage

2 Future DoD Electronics Challenges Key Issues COTS optimized for major com’l appl’s  ‘just enough’ IC’s  < 7 yr lifetime  reliability traded for performance  unknown rad & rel sensitivities of new matl’s & structures Lack of test, eval, vali- dation approaches+data hardened-by-design (HBD) + main- stream com’l fabs KC’s ~1 gen behind com’l HBD design & validation unknown rad & rel sensitivities of new tech gen’s behind com’l 2 fabs; >$600M/fab to upgrade unknown rad/rel sensitiv- ities of new tech < 0.25  m nitch ‘dedicated’ IC fabs with ‘process hardened’ technology 4 1 com’l specs meet system requirements Commercial Off The Shelf (COTS) Parts com’l specs do not meet reqt’s upscreen IC (show it can meet spec) reduce system spec to meet com’l spec 2 3 unknown reliability and radiation sensitivities of new materials, processes, device geometries & circuits Paramount Challenge DoD Electronics Requirements: 1) SOTA Performance + 2) Reliable for 5-20 yrs + 3) Radiation Hard + 4) Affordable

3 Unprecedented Number of New Materials Req’d for IC Scaling “Emerging tech nodes require the introduction of new matl’s at a rate that exceeds current capabilities for generating required database and models on new failure regimes and defects. Further increased scaling will make it difficult to maintain current reliability levels. We have entered the era of material limited device scaling and reliability!” (ITRS:2004) Industry Acknowledges Concerns (Si, SiO 2, Al); ~ 1 new mat’l/gen; ~ 2-3 new matl’s/gen Traditional Si, p-Si, SiO 2, & Al Have Reached Their Material Limits! SiO 2 Gate Insulator Polysilicon Gate Aluminum Interconnect SiO 2 Interlevel Dielectric Silicon Channel Silicon Substrate SiO 2 DRAM Capacitor High-k dielectric (TBD) Metal(s) (TBD) Cu Interconnects Low-k dielectric (aerogel,…) SiGe (strained) Silicon-on-Insulator (SOI) High-k dielectric (TBD) Circa Late 1990sCirca Mid-Late 2000s

4 COTS Reliability Trends Com’l part reliability 2-7yrs, DoD requires 1-20yrs Smaller & Faster CMOS Devices reduced feature size → inc.temp and tremendous leakage currents  increased hot carrier effects, oxide breakdown, and electromigration New Materials & Device Structures 1-3 new matl’s each generation and new device structures introduced  reliability sensitivities unknown Loss of Expertise in Reliability Analysis 1994 Acq. reforms dismantled gov’t electronics T&E infrastructure. Reliability community is lagging fabs in identifying/modeling new failure modes IC Lifetime 70C  Process Lifetime & Variation nm IC Lifetime (yrs) <2 130nm SDI Smaller Devices + New Matl’s + New Device Structures = Reduced Reliability CC Time (hrs) yrs 30 yrs CMOS IC Lifetime U. Maryland/Boeing 17 yrs 1.8 yrs

5  Natural Space Environment: graceful degradation & repeated upsets  HAND would cause total failure of electronics in weeks to months Solar Protons & Heavy Ions Trapped Van Allen Belt Electrons & Protons Galactic Cosmic Ray Heavy Ions & Protons High Altitude Nuclear Detonation (HAND) Key DoD future space DoD missions will Concerns increasingly rely on COTS parts: 1) reduced feature size: 90nm  45nm inc’d SEEs 2) unprecendented number of new processes & materials unknown radiation sensitivities : Natural & Man-Made Space Rad Environment Defines DoD’s Unique Electronics Reqt’s

6 RHOC 6.1 Roadmap