001-96132Owner: SKRG Rev *A Tech lead: EWOO 1Mb Quad SPI nvSRAM Quick Presentation 1 Quick Presentation: 1Mb Quad SPI nvSRAM Eliminate Batteries and Reduce.

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Presentation transcript:

Owner: SKRG Rev *A Tech lead: EWOO 1Mb Quad SPI nvSRAM Quick Presentation 1 Quick Presentation: 1Mb Quad SPI nvSRAM Eliminate Batteries and Reduce Pin Count While Maintaining High-Speed Nonvolatile RAM Performance Title

Owner: SKRG Rev *A Tech lead: EWOO 1Mb Quad SPI nvSRAM Quick Presentation 2 Cypress: No. 1 in NOR Flash, SRAM, NVRAM Comparison to Competitors’ Memory Product Portfolios Cypress has the broadest portfolio of high-performance memories for embedded systems Product CategoryCypressCompetitorsPerformance Advantage Metrics ISSIMicronToshibaWinbondMacronixFujitsu No. 1 NOR Flash Parallel NOR Flash Highest Read Bandwidth Fastest Program/Erase 102 MBps Serial NOR Flash Highest Read Bandwidth Fastest Program/Erase 160 MBps HyperFlash™ 1 Highest Read Bandwidth333 MBps No. 1 SRAM QDR ® -IV Synchronous SRAM Highest RTR (random transaction rate) 2.1 GT/s Asynchronous SRAM with ECC 2 Highest reliability<0.1 FIT 3 MicroPower SRAM Lowest standby current1.5 µA No. 1 NVRAM Serial F-RAM™ 4 Lowest standby current100 µA Parallel nvSRAM 5 Fastest NVRAM 6 20 ns AGIGARAM ® 7 Highest-density NVRAM 6 16GB 1 A Cypress NOR Flash Memory product family that offers higher bandwidth than Quad SPI NOR Flash Memory with one-third the number of pins of parallel NOR Flash Memory 2 Error-correcting code 3 Failures In Time (billion hours) 4 Ferroelectric RAM 5 Nonvolatile SRAM 6 Nonvolatile memory that provides direct access to read and write to any memory location in any random order 7 A Cypress brand name Market Positioning

Owner: SKRG Rev *A Tech lead: EWOO 1Mb Quad SPI nvSRAM Quick Presentation 3 nvSRAM Portfolio High Density | High Speed 64Kb-256Kb 512Kb-16Mb 1 Open NAND flash interface 2 Industrial grade -40ºC to +85ºC 3 Real-time clock Parallel nvSRAMSPI nvSRAM I 2 C nvSRAM Parallel nvSRAMSPI nvSRAM I 2 C nvSRAM CY14B116K/L 16Mb; 3.0 V 25, 45 ns; x8; Ind 2 RTC 3 CY14B116R/S 16Mb; 3.0 V 25, 45 ns; x32; Ind 2 RTC 3 CY14V116F/G 16Mb; 3.0, 1.8 V I/O 30 ns; ONFI x8, x16; Ind 2 CY14B116M/N 16Mb; 3.0 V 25, 45 ns; x16; Ind 2 RTC 3 CY14B108K/L 8Mb; 3.0 V 25, 45 ns; x8; Ind 2 RTC 3 CY14B104K/LA 4Mb; 3.0 V 25, 45 ns; x8; Ind 2 RTC 3 CY14B101KA/LA 1Mb; 3.0 V 25, 45 ns; x8; Ind 2 RTC 3 CY14V101LA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind 2 CY14B256KA/LA 256Kb; 3.0 V 25, 45 ns; x8; Ind 2 RTC 3 CY14V/U256LA 256Kb; 3.0, 1.8V I/O 35 ns; x8; Ind 2 CY14B108M/N 8Mb; 3.0 V 25, 45 ns; x16; Ind 2 RTC 3 CY14B104M/NA 4Mb; 3.0 V 25, 45 ns; x16; Ind 2 RTC 3 CY14E256LA 256Kb; 5.0 V 25, 45 ns; x8; Ind 2 CY14V104LA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind 2 CY14B101MA/NA 1Mb; 3.0 V 25, 45 ns; x16; Ind 2 RTC 3 CY14V101NA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind 2 CY14V104NA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind 2 CY14B064P 64Kb; 3.0 V 40 MHz SPI; Ind 2 RTC 3 CY14B256P 256Kb; 3.0 V 40 MHz SPI; Ind 2 RTC 3 CY14B512P 512Kb; 3.0 V 40 MHz SPI; Ind 2 RTC 3 CY14B101P 1Mb; 3.0 V 40 MHz SPI; Ind 2 RTC 3 CY14B064I 64Kb; 3.0 V 3.4 MHz I 2 C; Ind 2 RTC 3 CY14B256I 256Kb; 3.0 V 3.4 MHz I 2 C; Ind 2 RTC 3 CY14B512I 512Kb; 3.0 V 3.4 MHz I 2 C; Ind 2 RTC 3 CY14B101I 1Mb; 3.0 V 3.4 MHz I 2 C; Ind 2 RTC 3 STK11C Kb; 5.0 V 35, 55 ns; x8; Mil 7 STK12C Kb; 5.0 V 35, 55 ns; x8; Mil 7 STK14C Kb; 5.0 V 35, 45 ns; x8; Mil 7 4 Double Data Rate 5 Quad serial peripheral interface 6 Extended Industrial grade -40ºC to +105º CY14V101QS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI 5 ; Ind 2 Ext. Ind 6 CY14V101PS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI 5 ; Ind 2 Ext. Ind 6 ; RTC 3 Higher Densities QSPI 5 nvSRAM NDA Required Contact Sales Higher Densities DDRx 4 nvSRAM NDA Required Contact Sales ProductionDevelopment QQYY Availability Sampling Concept Status NEW 7 Military grade -55ºC to +125ºC Roadmap

Owner: SKRG Rev *A Tech lead: EWOO 1Mb Quad SPI nvSRAM Quick Presentation 4 1Mb Quad SPI nvSRAM Computing and networking Industrial automation RAID 1 storage Applications Quad SPI 2 interface: 108 MHz Unlimited write endurance 3 One million store cycles on power fail Data retention of 20 years at 85ºC Operating voltages: 3.0 V, 1.8-V I/O Low standby (280-µA) and sleep (10-µA) currents Industrial temperature range: -40ºC to +85ºC Extended Industrial temperature range: -40ºC to +105ºC Integrated, high-accuracy real-time clock (RTC) Package: 16-SOIC, 24-BGA Features Preliminary Datasheet:Contact SalesContact Sales Collateral Block Diagram Sampling: Q Production:Q Availability Power Control VCAP 5 Store/Recall Control HSB 6 Recall Store I/O Control Software Command Detect QSPI I/Os 1Mb Quad SPI nvSRAM 4 RTC XIN 4 XOUT 4 3 The number of times a nonvolatile memory cell can be rewritten before it wears out 4 Crystal connections 5 External capacitor connection 6 Hardware store busy VRTC SONOS Array SRAM Array Control Logic 2 Control 1 Redundant array of independent disks: A storage technology that uses two or more disk drives for redundancy 2 A high-speed interface that combines four individual SPI channels to increase serial bus bandwidth Product Overview

Owner: SKRG Rev *A Tech lead: EWOO 1Mb Quad SPI nvSRAM Quick Presentation 5 Here’s How to Get Started 1. Download our App Notes: Cypress Nonvolatile Products App NotesCypress Nonvolatile Products App Notes 2. Register to access online technical supportRegister 3. Visit the Cypress nonvolatile product web page to learn moreweb page RAID Card by LSI Logic Router by Cisco Programmable Logic Controller by Keyence Getting Started