Memory Devices on DE2-115 數位電路實驗 TA: 吳柏辰 Author: Trumen.

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Presentation transcript:

Memory Devices on DE2-115 數位電路實驗 TA: 吳柏辰 Author: Trumen

Outline SRAM SDRAM FLASH EEPROM SD Card 2

SRAM 3

4

Features 5 16M-bit (2MB) static RAMs organized as 1024K words by 16 bits. High-speed access times: speed = 20ns for VDD 1.65V to 2.2V speed = 10ns for VDD 2.4V to 3.6V speed = 8ns for VDD 3.3V + 5% # of addresses Maximum performance frequency: 125MHz

Schematic Diagram 6

SRAM Pin Assignments 7 Signal NameFPGA Pin No.Description SRAM_ADDR[0]~PIN_AB7~SRAM Address[0]~ SRAM_DQ[0]~PIN_AH3~SRAM Data[0]~ SRAM_OEPIN_AD5SRAM Output Enable SRAM_WEPIN_AE8SRAM Write Enable SRAM_CEPIN_AF8SRAM Chip Enable SRAM_LBPIN_AD4SRAM Lower Byte Control SRAM_UBPIN_AC4SRAM Upper Byte Control

SRAM Block Diagram 8

SRAM Pin Configuration 48-pin TSOP-1 (12mm x 20mm) 9

Truth Table 10

Read Cycle 11 Min. read cycle time t RC = 8ns

Write Cycle 12 Min. write cycle time t WC = 8ns

The End. Any question?

Reference 1. "DE2-115 User Manual" by Terasic. 2. "DE2-115_MB.pdf" by Terasic. 3. "61WV102416ALL(ISSI_1M x 16_SRAM).pdf" by ISSI. 14