1 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Introduction More Moore, Resist Part for joint workshop of EUV Projects Medea+ T 406 Excite, WP1 Resist and European Communities FP6, More Moore SP3 WP6 Athens 12.Mai 2005

2 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL EUV evaluation in Europe EXCITE T406 EUV Imaging Resist part: WP1 EXCITE T406 EUV Imaging Resist part: WP1 EXTATIC T403 EUV Alpha Tool EXTATIC T403 EUV Alpha Tool SOURCE T405 EUV Source SOURCE T405 EUV Source EXTUMASK T404 EUV Mask EXTUMASK T404 EUV Mask More Moore Resistpart: SP3WP6 More Moore Resistpart: SP3WP6 Lithographic tool Optical system EUV source EUV mask blank EUV mask EUV resist MEDEA + Projects More Moore SP3WP4+5 SP3WP4+5 More Moore SP3WP4+5 SP3WP4+5 More Moore SP2WP2 SP2WP2 SP2WP1+3 SP2WP1+3 More Moore SP2WP1+3 SP2WP1+3 EU Comm., FP6 Frame Project R&D Objectives

3 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Extract of resist requirements from the ITRS 2004 Technology nodehp45hp 32hp 22 Resolution DRAM ½ Pitch [nm] CD Control (3 Sigma) [nm] 1,61,2 0,9 Resist Thickness [nm, single layer] PEB temperature sensitivity [nm/°C]1,511 Line Width Roughness [nm, 3sigma]21,41 Further requirements for the EUV resist were added by the manufacturer of the EUV exposure tool and the lithographic process Sensitivity [mJ/cm²]2 -15 Outgassing [molecules/cm²]5*10 10 Chemical behavior under EUV radiationChemistry of outgassing, cross- linking, chain scission, diffusion blur, chemical reaction path

4 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL More Moore SP3 WP6 - Partners for Resist evaluation Karl van Werden Michele Bertolo David Nijkerk Evangelos Gogolides Cyril Vannuffel Jean-Hervé Tortain Peter Leunissen Electronic Materials

5 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Specific objectives for SP3 WP6 Objectives High resolution and low LER EUV resist for 22 nm Node 1.Characterize and understand the limiting parameters of CAR resist for high resolution 2.Evaluate the resolution limit of existing resist. 3. Understand the formation of Line Edge Roughness and evaluate the impacts on device / propose LER quantification methods..

6 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL This work package SP3-WP6, has the following tasks: Physicochemical characterization of photoresists. Developing the necessary characterization tools and techniques allowing to understand the physic of CAR and the impact of thin film. Search of EUV resist systems for the 22 nm node, to propose formulation of EUV resist, fulfilling the requirements of the EUV lithography. Evaluation of the 22 nm node capability (resolution limit) of existing and novel resist systems Line Edge Roughness. Simulate the resist performance and LER formation, propose LER quantification methods, and understanding and looking at the impact of Line Edge Roughness on CD budget and impact on device.

7 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Task 6.1: Physicochemical characterization of photoresists. Participants : AZ Electronic Materials, CNRS, IMEL, Elettra. The main aim of this task is to increase the understanding of diffusion phenomena in thin films and substrate-resist-interference effects. Tg characterization a) Bulk characterization of EUV resist with Modulated Thermal Differential Scanning Calorimetry (MTDSC) (IMEL). b)Tg of UTR films, with thickness of 80 nm, will be measured by: 1) Ultra Thin Film Interferometry a method developed at IMEL 2) Spectroscopic ellipsometry measurement of UTR films during heating at CNRS These studies will be supported by modeling of the thin film and diffusion effects. SP3-WP6 High resolution and low LER EUV resist Four main tasks will be performed:

8 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Out gassing Out gassing of the resist and resist material will be evaluated using the synchrotron radiation facility of ELETTRA. a) mass spectrometry studies b) analysis how the out gassed material redeposit nearby, e.g. on a wafer or on a multilayer mirror. Bulk resist characterization Characterizations will be carried out to determine the blanket resist properties like speed, thickness uniformity, pinholes, etc. The performance of available resists will be compared to EUV requirements. The characteristics of the existing resists will be taken into account for the development of new EUV resist systems (task 6.2). Task 6.1: Physicochemical characterisation of photoresists.

9 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Task 6.2 EUV resist systems for 22 nm node. Partner: AZ Electronic Materials On the based of resist materials characterization, new EUV resists systems formulation will be done. Special attention will be directed to outgassing of resist components and adequate sensitivity adjustment. With the access to the alpha EUV exposure tool the assessment of resist performance and process windows will get a new quality. The results of task 6.3 will be used to further optimize resist formulations and processing for best performance (Task 6.2). For the principle of chemically amplification there are large concerns about the ability of such resist to achieve 22 nm line and space resolution. So research work is mandatory to understand the limiting factors. Simulation and modeling have to continue to contribute to the understanding of the limiting factors for CAR. AZ EM can support these issues by model resist to prove theory with experience.

10 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Task 6.3: Evaluation of 22 nm capability of resists. Participants: CEA-Leti and AZ Electronic Materials The lithographic evaluations, of commercial and novel photo resists to support task 6.2. To assess the resolution limit, the printing will be done by direct writing e- beam technique and EUV interferometric lithography. This last EUV-IL will be carried out at PSI (Paul Scherrer Institute). The goal of this work package, is to assess the capability of resists to achieve the 22 nm node requirements and ITRS LER requirements with an “orientation “decision at 24 months. If the requirements are not achieved at this time, research actions will be pursued during the third year of the project. If the resolution requirements are achieved, the task will be oriented to process development and integration for the alpha tool needs.

11 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Task 6.4 Understanding LER for the 22 nm node and its impact Partners: IMEL, IMEC, TNO. This task has the following sub-tasks:  Protocol on measurement and definition of LER. In order to properly tackle issues related to LER, the methods for evaluating LER through SEM using image analysis, and quantifying LER through statistical and fractal analysis should be established. This method will be applied in the project for LER evaluation and comparison among resists. Partners: IMEL, IMEC, TNO  Understanding LER. In order to guide resist research for improving LER, it is essential to understand the various contributions to LER. This approach will be theoretical with experimental verification and validation in current systems. The following chemical contributions will be investigated: Effect of molecular weight of resist material and processing (IMEL)

12 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Secondary Electron Scattering and shot noise (TNO) The scattering of secondary electrons in the resist and on the substrate gives a contribution to image blur. The main object of the current research is to determine the influence of resist and substrate composition on the behaviour of secondary electrons and consequent image blur increase. The research activities consist of measurements on resists and the development of computation and simulation models The implications of dose induced LER (shot noise) on the LER; the relation between shot noise and resist sensitivity) is of crucial interest.  LER specifications. The influence of wafer processing conditions on LER will be investigated by comparison of line shapes after lithography, etch, and the other process steps needed to come to a working device. The impact of physical LER on the device performance will be simulated. Based on this activity, specifications will be set up for allowable LER for acceptable device performance. Partners: IMEC, TNO. Task 6.4 Understanding LER for the 22 nm node and its impact

13 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Status of the More Moore Project, Resist Part Start of project Status after 16 months, Mai 2005 Results: Test equipment and test procedures for EUV resist materials in place for Tg out gassing LER measurement Simulation programs installed or in progress for modeling LER, secondary electron scattering, diffusion Evaluation of resist samples possible on base of open frame exposure In Europe EUV lithography possible with interference lithography at PSI, no processing infrastructure, only useful for resolution tests of EUV resists. Resolution tests of resists with E-beam exposure as alternative

14 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Status of the More Moore Project, Resist Part The lithographic performance of tested EUV resist does not meet the requirements of More Moore targets for resolution, LER and sensitivity.

15 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Discussions of realistic possibilities of EUV resist evaluation within the More Moore Project needed Discussion on reliable test procedures for selecting materials Discussion on resist strategy for model resists, verification of simulations Status of the More Moore Project, Resist Part

16 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL