Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells.

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Presentation transcript:

Jan-Gustav Werthen 1 st CPV China & 4 th International CPV Workshop September 17 – 18, 2012 JDSU 6” Wafer CPV Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 2 Outline  The value of MQW for CPV Theory & Modeling  JDSU 42% MQW Cells Qualified production cells  Performance Roadmap  Summary

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 3 There are no ternary alloys lattice matched to Ge or GaAs with a lower bandgap than GaAs The Value of Multiple Quantum Wells (MQW) InGaP/GaAs The GaInP and GaAs bandgaps in a tandem/triple junction are too high.

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 4 GaAs Band Gap not ideal GaAs bandgap energetically too high InGaAs better suited for AM1.5 spectrum under concentration GaAs In 0.1 GaAs 1000 Suns J. Ward et al, 23 rd IEEE PVSC, (1993)

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 5 Lattice Mismatch in Bulk InGaAs Leads to Dislocations Dislocations

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 6 GaAsP (barrier) InGaAs (well) GaAs (bulk) We are able to grow up to 65 quantum wells with this technique ‘Strain balanced’ quantum well solar cells are dislocation free EFEF Stress Balancing Avoids the Creation of Dislocations

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 7 Generation and Recombination with MQWs in Cell Junction pi Shockley Injection Recombination Recombination Δμ n Thermal escape Generation At short circuit current all generated carriers escape from the wells GaAs GaAsP InGaAs

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 8 MQW Cell Spectral Response: Modeling and Experiment

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 9 JDSU Production MQW CPV Cells: Spectral Response

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 10 Typical Performance Parameters Production MQW Cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 11 Highest Performing Production MQW Cells High-Efficiency Cell (9.3mm x 9.3mm)

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 12 Distribution (Efficiency and Current at max power) Data shown for 9.3mm x 9.3mm cells

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 13 Temperature Coefficients

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 14 MQW Cell Platform Fully Qualified

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 15 MQW Cell Performance Roadmap %* % % InGaP MQW % AlInGaP 6 inch wafer AlGaAs Ge MQW Ga(In)As Ge *Minimum average efficiency from the first available production cells This roadmap contains forward-looking product development plans based on current expectations. The actual products, product functionality, and timing of the product and or product functionality releases could change materially.

© 2012 JDS Uniphase Corporation | JDSU CONFIDENTIAL AND PROPRIETARY INFORMATION 16 Summary  MQW CPV Cells Perform as Expected Median cell efficiency at 41.5% per wafer  JDSU MQW Cell Platform Established Qualified production cells on 150mm (6”) wafers  Roadmap Expands the Use of MQWs Add MQWs to top cell to reach 43% per wafer Acknowledgements to the JDSU engineering team: Ben Browne, Jon Lacey, James Liu, Xiaodong Chen, Ta-Chung Wu, Gianluca Bacchin, Tom Tibbits

Thank You