Virtual NanoFab A Silicon NanoFabrication Trainer

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Presentation transcript:

Virtual NanoFab A Silicon NanoFabrication Trainer Nick Reeder, Sinclair Community College Andrew Sarangan, University of Dayton Jamshid Moradmand, Sinclair Community College

Challenge: Providing Hands-on Silicon Nanofabrication Experience The facilities needed to do silicon nanofab are very expensive.

Solution: Virtual Nanofab Software that we’re developing to teach students about the steps involved in processing a silicon wafer. Please take a copy of the installation disc! System Requirements: Operating system: Windows XP or higher Memory: 2 GB RAM Hard drive: 300 MB of free space If your computer does not have National Instruments LabVIEW installed, you must install the free LabVIEW run-time engine, which is included on the installation disc.

Example: Fabricating a MOSFET MOSFET = Metal-oxide-semiconductor field effect transistor

MOSFET in Virtual NanoFab The structure shown required about 25 steps.

User Operations Thermal oxidation Photolithography Removing material Spin coat Mask Expose Develop Removing material Wet etch Dry etch Depositing layers of material E-beam evaporation Chemical Vapor Deposition (CVD) Sputtering Ion implantation (“doping”)

Thermal Oxidation Grows a layer of silicon dioxide (SiO2) on the wafer surface. Key properties of SiO2: Impervious to ion implantation. Can be etched away by immersion in hydrofluoric acid (HF), which does not etch silicon.

Thermal Oxidation in Virtual NanoFab

Photolithography Steps in photolithography: Spin-coat photoresist. Create and place mask. Mask defines which areas will be exposed to UV light and which areas will be shaded. Expose with UV light. “Develop” the photoresist: UV-exposed areas are removed, while shaded areas remain.

Photolithography in Virtual NanoFab Before exposing: After exposing (but before developing): After developing:

Exposure with Uneven Layer Thicknesses Note that resist above silicon is more fully exposed than resist above aluminum.

Removing material Methods of removing material Wet etching Dry etching Low-tech Immerse wafer in a bath of liquid acid or solvent Dry etching High-tech Expose wafer to plasma beam

Etching in Virtual NanoFab SiO2 (blue) after wet etch with hydrofluoric acid: note tapered sidewalls and undercut of photoresist (pink). SiO2 after dry etch with CF4 plasma: note vertical sidewalls.

Depositing Layers Methods of depositing materials Electron-beam evaporation Chemical vapor deposition (CVD) Sputtering

Deposition in Virtual NanoFab Evaporated titanium (gray): accumulates only on horizontal surfaces. Chemical-vapor-deposited titanium: adheres to vertical surfaces as well as horizontal.

Ion Implantation Modifies the electrical characteristics of the silicon wafer: key to the operation of semiconductor devices such as diodes and transistors. Implanting boron results in “p-type” doping. Implanting phosphorus results in “n-type” doping.

Ion Implantation in Virtual NanoFab

Other Features Maintains history of user operations. “Reference & Videos” page provides chapters explaining theory, along with videos of operations being performed in the lab.