Semiconductor Introduction ENGI 242 ELEC 222. January 2004ENGI 242/ELEC 2222 Specification Symbol Notation Standard Type of valueSymbolSubscript Instantaneous.

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Presentation transcript:

Semiconductor Introduction ENGI 242 ELEC 222

January 2004ENGI 242/ELEC 2222 Specification Symbol Notation Standard Type of valueSymbolSubscript Instantaneous value of time varying valueLower case Instantaneous total valueLower CaseUpper case RMS or effective valueUpper CaseLower case Maximum or average value, dc valueUpper Case

January 2004ENGI 242/ELEC 2223 Factors effecting Resistivity

January 2004ENGI 242/ELEC 2224 Ge and Si single-crystal structure

January 2004ENGI 242/ELEC 2225 Atomic structure: (a) germanium; (b) silicon

January 2004ENGI 242/ELEC 2226 Energy levels: discrete levels in isolated atomic structures

January 2004ENGI 242/ELEC 2227 Conduction and valence bands of an insulator; semiconductor; and conductor.

January 2004ENGI 242/ELEC 2228 Antimony impurity in n-type material

January 2004ENGI 242/ELEC 2229 Effect of donor impurities on the energy band structure

January 2004ENGI 242/ELEC Boron impurity in p-type material.

January 2004ENGI 242/ELEC Electron versus hole flow.

January 2004ENGI 242/ELEC (a) n-type material; (b) p-type material.

January 2004ENGI 242/ELEC p-n junction with no external bias

January 2004ENGI 242/ELEC No-bias conditions for a semiconductor diode

January 2004ENGI 242/ELEC Forward-biased p-n junction

January 2004ENGI 242/ELEC Reverse-bias conditions for a semiconductor diode

January 2004ENGI 242/ELEC Reverse-biased p-n junction

January 2004ENGI 242/ELEC As the reverse bias voltage becomes greater, the charge stored in the depletion region increases.