ELECTRONICS I Instructor: Eng.Moayed N. EL Mobaied The Islamic University of Gaza Faculty of Engineering Electrical Engineering Department بسم الله الرحمن.

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POWER ELECTRONICS Instructor: Eng.Moayed N. EL Mobaied The Islamic University of Gaza Faculty of Engineering Electrical Engineering Department بسم الله.
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ELECTRONICS I Instructor: Eng.Moayed N. EL Mobaied The Islamic University of Gaza Faculty of Engineering Electrical Engineering Department بسم الله الرحمن الرحيم EELE 2321 — Spring 2010 Lecture 3

Semiconductor materials Intrinsic: Pure Si, Ge Covalent bonding Nearest to insulators 8 Electrons in outside

Semiconductor materials Doping: Change the electrical properties of the material Positive or negative 1 part of 10 million Extrinsic

Semiconductor materials N-type material Adding to pure Si elements that have five valence electron ( pentavalent) Antimony Arsenic Phosphorus Donor Atoms

Semiconductor materials P-type material Adding to pure Si elements that have three valence electron Boron Gallium Indium Acceptor Atoms

Semiconductor materials Majorities and Minorities carriers

Semiconductor materials Semiconductor Diode

Semiconductor materials Reverse-bias V D <0

Semiconductor materials Forward-bias V D >0

Semiconductor materials N=1,2 text book=1 Shockley’s equation V T = Thermal voltage I S = Saturation current

Semiconductor materials

Ge,Si,and GaAs

Semiconductor materials End of Lecture **** Eng.moayed Temp. effects (Si)