The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE122 – Lab 7 MOSFET Parameters.

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The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE122 – Lab 7 MOSFET Parameters and Scaling Effects Jason Woytowich Ritu Bajpai November 2, 2006

CMOS Scaling Devices are constantly shrinking in an effort to increase the number of devices on a chip. The state-of-the-art mass production is moving into ~65nm. Clock speeds are scaled up to increase performance.

Effects on the Device Short-channel effects on VT Velocity saturation Gate leakage current (IG) Subthreshold current (ID)

Effects on the Circuit Increased power consumption. Leads to decreased supply voltage and smaller noise margins. Increased role of wiring resistance, inductance and capacitance. Interconnect coupling IR Drop Electromigration

Spice MODELS The standard spice model is not sufficient to capture all of these effects. There have been many upgrades to it in order to increase it’s effectiveness. Level 1~5 Parameters Level 49~100 Parameters

Review of Spice Parameters.model nmos nmos Level=1 + Vto=1.0Kp=3.0E-5Gamma= Phi=0.65Lambda=0.02Tox=0.1u + Nsub=1.0E+15Nss=1.0E+10Ld=0.01u + Tpg=1.00Uo=700.0Af=1.2 + Kf=1.0E-26Is=1.0E-15Js=1.0E-8 + Pb=0.75Cj=2.0E-4Mj=0.5 + Cjsw=1.00E-9Mjsw=0.33Fc=0.5 + Cgbo=2.0E-10Cgdo=4.00E-11Cgso=4.00E-11 + Rd=10.0Rs=10.0Rsh=30.0

The “REAL” Data bin/cgiwrap/umosis/swp/params/ibm- 018/t67j_7wl_5lm_ma-params.txt file will serve as the real datahttp:// bin/cgiwrap/umosis/swp/params/ibm- 018/t67j_7wl_5lm_ma-params.txt Save the above file as.md file. Make changes so as to correspond to the tanner.md format.

The test setup

The simulation A DC sweep of 100 points of VDS from 0 to 1.8V A Secondary sweep of 10 points of VGS from 0 to 1.8V.dc source VDS lin sweep source VGS lin include "C:\Documents and Settings\Student\Desktop\ECE122_Lab7\ml1_typ.md“ *replace with your path name *.include "C:\Documents and Settings\Student\Desktop\ECE122_Lab7\IBM_018u.md“// put your pathname.print dc i(M1,D) * Main circuit: MosfetTest M1 D G Gnd Gnd NMOS L=180n W=1u AD=66p PD=24u AS=66p PS=24u VGS G Gnd 5.0 VDS D Gnd 5.0 * End of main circuit: MosfetTest