ECE340 ELECTRONICS I MOSFET TRANSISTORS AND AMPLIFIERS.

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Presentation transcript:

ECE340 ELECTRONICS I MOSFET TRANSISTORS AND AMPLIFIERS

MOSFET METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR VOLTAGE - CONTROLLED DEVICE LOW POWER DISSIPATION

MOSFET SOURCEDRAIN OXIDE METAL OXIDE CHANNEL L

NMOSFET ENHANCEMENT MODE DEVICE N TYPE SOURCEN TYPE DRAIN OXIDE METAL OXIDE P TYPE SUBSTRATE +V G +V D -V S -V B DEPLETION LAYER

MOSFET “ON” CONDITION n+ OXIDE METAL OXIDE V G > V TN +V D p IDID electrons

MOSFET PARAMETERS i D – DRAIN CURRENT V TP,V TN – THRESHOLD VOLTAGE (V TH ) v DS – DRAIN TO SOURCE VOLTAGE v GS – GATE TO SOURCE VOLTAGE v B – BULK VOLTAGE

THRESHOLD VOLTAGE VOLTAGE REQUIRED TO CREATE AN INVERSION LAYER OF CHARGE UNDER THE GATE OXIDE POSITIVE FOR n-CHANNEL DEVICES NEGATIVE FOR p-CHANNEL DEVICES

BULK VOLTAGE LOWEST VOLTAGE AVAILABLE FOR NMOS (N- CHANNEL) DEVICES HIGHEST VOLTAGE AVAILABLE FOR PMOS (P- CHANNEL) DEVICES REVERSE-BIASES PN JUNCTIONS

MOSFET CAPACITANCE POSITIVE OR NEGATIVE VOLTAGE AT GATE TERMINAL INDUCES CHARGE ON GATE METAL CHARGE OF OPPOSITE TYPE ACCUMULATES IN CHANNEL FORMS MOSFET CAPACITOR

OXIDE CAPACITANCE

PARAMETER DEFINITIONS  n,p - ELECTRON OR HOLE MOBILITY  ox – PERMITTIVITY OF OXIDE t ox – OXIDE THICKNESS (W/L) – ASPECT RATIO

MOSFET OPERATION SOURCE TERMINAL IS GROUNDED GATE AND DRAIN VOLTAGES REFERENCED TO SOURCE VOLTAGE VOLTAGE IS APPLIED TO GATE TERMINAL TO INDUCE CHARGE IN THE CHANNEL

CHARGE FLOW CHARGE IS PULLED INTO CHANNEL FROM DRAIN AND SOURCE REGIONS CHARGE FLOWS FROM SOURCE TO DRAIN AS DRAIN VOLTAGE IS INCREASED

DEVELOPMENT OF MOSFET EQUATIONS

N-CHANNEL MOSFET EQUATIONS

MOSFET CHARACTERISTICS v DS 0V2V4V6V8V10V12V IDID 0mA 0.5mA 1.0mA 1.5mA v GS3 v GS2 v GS1

TRANSCONDUCTANCE PARAMETER COMPONENTS MOBILITY ELECTRIC PERMITTIVITY OXIDE THICKNESS ASPECT RATIO

TRANSCONDUCTANCE PARAMETER PHYSICS

n-CHANNEL MOSFET OPERATION IN CUTOFF REGION

n-CHANNEL MOSFET OPERATION IN LINEAR REGION

n-CHANNEL MOSFET OPERATION IN SATURATION REGION

p-CHANNEL MOSFET OPERATION IN CUTOFF REGION

p-CHANNEL MOSFET OPERATION IN LINEAR REGION

p-CHANNEL MOSFET OPERATION IN SATURATION REGION

NMOS INCREMENTAL RESISTANCE IN THE LINEAR REGION

PMOS INCREMENTAL RESISTANCE IN THE LINEAR REGION

MODULATED CHANNEL IN SATURATION REGION n+ OXIDE METAL OXIDE V G > V TN +V D p IDID V D >>V G TAPERED CHANNEL

NMOS INCREMENTAL RESISTANCE IN SATURATION REGION

PMOS INCREMENTAL RESISTANCE IN SATURATION REGION

DEPENDENCE ON DRAIN VOLTAGE

PSPICE MOSFET SYMBOLS p-channel enhancement n-channel enhancement

NMOS LARGE SIGNAL MODEL V GS V DS + - S + G S rOrO - DG

DEVELOPMENT OF MOSFET SMALL- SIGNAL MODEL

TOTAL CURRENT AND VOLTAGE

COMPONENTS OF TOTAL CURRENT

MOSFET TRANSCONDUCTANCE

ALTERNATIVE TRANSCONDUCTANCE EQUATION

SMALL-SIGNAL MODEL g d s s rOrO VCC v ds v gs - g m v gs idid