Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 1 Quality Design for Valued Engineer
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 2 PowerESIM Features
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 3 PowerESIM Features
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 4 PowerESIM Features
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 5 PowerESIM Features
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 6 SPICE vs PowerESIM PowerESIM asking forSPICE asking for K Np Ns Co Do M1 Vi Rp Rp_ac Rs Rs_ac Rm
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 7 PowerESIM is all about - Select and Decise
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 8 Result orientated – Loss analysis
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 9 Result orientated – Thermal analysis Measured Simulated
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 10 Result orientated – Waveform analysis Measured Simulated
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 11 Result orientated – Loop Stability & Transient Measured Simulated
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 12 Result orientated – Input Current Harmonic Measured Simulated
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 13 Result orientated – MTBF & Life Time Simulated Measured Will be reported at 1/Mar/2100
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 14 Result orientated – DVT report Simulated Measured
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 15 Build a Xformer Simulated Lk=2.982uH Measured Lk=2.787uH
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 16 Add your own component to all analytical tools
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 17 Consideration on MOSFET Gate drive Drain voltage Drain current t0t1t2t3t4 t0-t1 drain current catch up with load current t1-t2 drain voltage falling period t2-t3 MOSFET fully turn on t3-t4 drain voltage rising period with miller effect t4-t5 drain current falling period
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 18 Ns Voltage Diode voltage Diode current t1t2t3t4t5 t0-t1 diode in forward bias t1-t2 forward current drop to zero t2-t3 from zero current to peak reverse current (ta) t3-t4 reverse current droping period t4-t5 leakage current with reverse voltage t0 Consideration on Diode
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 19 R dc R skin R dc R proximity R core R fringe I pri I mag I se c R dc – wire dc losses R skin – wire skin effect losses R proximity – wire proximity effect losses R fringe – fringing flux losses R core – core losses Consideration of Magnetic
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 20 Freq. Loss BB Loss Core Loss Characteristics – frequency and flux Every Engineer know, but...
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 21 I dc_bias Loss D I dc_bias D Core Loss Characteristics – dc bias and duty cycle Data sheet Loss is I dc_bias =0 Large I dc_bias >Bs Somewhere in between must exist rising B Higher Freq. higher loss Higher flux change rate higher loss Smaller D means higher flux change rate
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 22 ESR Irms Temp. ESR o C o C Freq. ESR Consideration on Capacitor
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 23 FmFm d(s) v e (s) RsRs C c (s) A c (s) Z p (s) V i (s) V o(s) i L (s) B c (s) Consideration on Loop Analysis
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 24 By introducing a second order (two pole) transfer function with resonate frequency at half of the switching frequency and a damping factor Consideration on Subharmonic Instability
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 25 FmFm d(s) v e (s) RsRs C c (s) A c (s) Z p (s) V i (s) V o(s) i L (s) B c (s) F(s) More complicated graphical model
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 26 Automatic compensation After all, you only need a final compensated design
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 27 Consideration on MTBF p = b A r s c Q E T... Where p is the part failure rate b is the base failure rate is factors modify the base failure rate
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 28 MTBF result with a click
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 29 Consideration on Thermistor Consideration on PWM Consideration on Bridge : Consideration on Resistor More Consideration...
Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited 30 Drop a business card to me to get one month free trail Don’t forget