Phan Tuan Anh Dec. 2010 Reconfigurable Multiband Multimode LNA for LTE/GSM, WiMAX, and IEEE 802.11.a/b/g/n 17 th IEEE ICECS 2010, Athens, Greece.

Slides:



Advertisements
Similar presentations
Importance of the LNA. Importance of the LNA Importance of the LNA Friis’ Formula.
Advertisements

High efficiency Power amplifier design for mm-Wave
E3 237 Integrated Circuits for Wireless Communication Gaurab Banerjee Department of Electrical Communication Engineering, Indian Institute of Science,
1 A Low Power CMOS Low Noise Amplifier for Ultra-wideband Wireless Applications 指導教授 : 林志明 學生 : 黃世一
System R&D on Multi-Standard RF Transceiver for 3G and beyond Advanced System Technology.
1/42 Changkun Park Title Dual mode RF CMOS Power Amplifier with transformer for polar transmitters March. 26, 2007 Changkun Park Wave Embedded Integrated.
Built-In Self-Test for Radio Frequency System-On-Chip Bruce Kim The University of Alabama.
Design of RF CMOS Low Noise Amplifiers Using a Current Based MOSFET Model Virgínia Helena Varotto Baroncini Oscar da Costa Gouveia Filho.
Low Power RF/Analog Amplifier Design Tong Zhang Auburn University Tong Zhang Auburn University.
An Integrated Solution for Suppressing WLAN Signals in UWB Receivers LI BO.
RF Wakeup Sensor – On-Demand Wakeup for Zero Idle Listening and Zero Sleep Delay.
学术报告 A Low Noise Amplifier For 5.2GHz Application Using 0.18um CMOS 蔡天昊
An Ultra-Wideband CMOS Low Noise Amplifier for 3–5-GHz UWB System
ECE1352F University of Toronto 1 60 GHz Radio Circuit Blocks 60 GHz Radio Circuit Blocks Analog Integrated Circuit Design ECE1352F Theodoros Chalvatzis.
1 Wideband LNA for a Multistandard Wireless Receiver in 0.18μm CMOS 指導教授 : 林志明 學生 : 黃世一
1 Low Phase Noise Oscillators for MEMS inductors Sofia Vatti Christos Papavassiliou.
Mohammad Reza Ghaderi Karkani
A 77-79GHz Doppler Radar Transceiver in Silicon
Experimental results obtained from a 1.6 GHz CMOS Quadrature Output PLL with on-chip DC-DC Converter Owen Casha Department of Micro & Nanoelectronics University.
1 A Low-Voltage Folded- Switching Mixer in 0.18-um CMOS Vojkan Vidojkovic, Johan van der Tang, Member, IEEE, Arjan Leeuwenburgh, andArthur H. M. van Roermund,
1 姓名 : 李國彰 指導教授 : 林志明老師 A 1v 2.4GHz CMOS POWER AMPLIFIER WITH INTEGRATED DIODE LINEARIZER ( The 2004 IEEE Asia-Pacific Conference on Circuits and Systems,
Design of LNA at 2.4 GHz Using 0.25 µm Technology
Seoul National University CMOS for Power Device CMOS for Power Device 전파공학 연구실 노 영 우 Microwave Device Term Project.
Study of 60GHz Wireless Network & Circuit Ahn Yong-joon.
Reconfigurable Ultra Low Power LNA for 2.4GHz Wireless Sensor Networks TarisT., Mabrouki A., Kraïmia H., Deval Y., Begueret J-B. Bordeaux, France.
New MMIC-based Millimeter-wave Power Source Chau-Ching Chiong, Ping-Chen Huang, Yuh-Jing Huang, Ming-Tang Chen (ASIAA), Shou-Hsien Weng, Ho-Yeh Chang (NCUEE),
RF System On Chip Quadrature VCO Comparison1/12 Fortià Vila VergésUniversitat Politecnica de Catalunya E.T.S.E.T.B. Fortià Vila Vergés 19th June 2007 Introduction.
An Ultra-Wide-Band GHz LNA in 0.18µm CMOS technology RF Communication Systems-on-chip Spring 2007.
Design of a GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, APMC 2005.
A 30-GS/sec Track and Hold Amplifier in 0.13-µm CMOS Technology
1.  Why Digital RF?  Digital processors are typically implemented in the latest CMOS process → Take advantages scaling. (e.g. density,performance) 
S. -L. Jang, Senior Member, IEEE, S. -H. Huang, C. -F. Lee, and M. -H
A Novel 2.4 GHz CMOS Class-E Power Amplifier with Efficient Power Control for Wireless Communications R. Meshkin, A. Saberkari*, and M. Niaboli Department.
ADS Design Guide.
A Ku-Band Interference-Rejection CMOS Low-Noise Amplifier Using Current-Reused Stacked Common-Gate Topology Adviser : Zhi-Ming Lin Postgraduate : Chia-Wei.
Presenter: Chun-Han Hou ( 侯 鈞 瀚)
A CMOS VCO with 2GHz tuning range for wideband applications Speaker : Shih-Yi Huang.
A 1.5-V 6-10-GHz Low LO-Power Broadband CMOS Folded-Mirror Mixer for UWB Radio H.-W. Chung, H.-C. Kuo, and H.-R. Chuang Institute of Computer and Communication.
Design of a 10 Bit TSMC 0.25μm CMOS Digital to Analog Converter Proceedings of the Sixth International Symposium on Quality Electronic Design IEEE, 2005.
Final Project in RFCS in the MINT Program of the UPC by Sven Günther
A New RF CMOS Gilbert Mixer With Improved Noise Figure and Linearity Yoon, J.; Kim, H.; Park, C.; Yang, J.; Song, H.; Lee, S.; Kim, B.; Microwave Theory.
18/10/20151 Calibration of Input-Matching and its Center Frequency for an Inductively Degenerated Low Noise Amplifier Laboratory of Electronics and Information.
Measurement of Integrated PA-to-LNA Isolation on Si CMOS Chip Ryo Minami , JeeYoung Hong , Kenichi Okada , and Akira Matsuzawa Tokyo Institute of Technology,
1 A CMOS 5-GHz Micro-Power LNA 指導教授 : 林志明 教授 學生 : 黃世一 Hsieh-Hung Hsieh and Liang-Hung Lu Department of Electrical Engineering and Graduate Institute of.
A High-Gain, Low-Noise, +6dBm PA in 90nm CMOS for 60-GHz Radio
8GHz, lV, High Linearity, Low Power CMOS Active Mixer Farsheed Mahrnoudi and C. Andre T. Salama The Edward S. Rogers Sr. Department of Electrical & Computer.
CommunicationElectronics Principles & Applications Third Edition Chapter 6 Radio Transmitters ©2001 Glencoe/McGraw-Hill Louis E. Frenzel.
University of Toronto - Chihou Lee UltraWideBand a.k.a. UWB Chihou Lee : ECE1352 : December 2003.
A NEW METHOD TO STABILIZE HIGH FREQUENCY HIGH GAIN CMOS LNA RF Communications Systems-on-chip Primavera 2007 Pierpaolo Passarelli.
An Ultra-low Voltage UWB CMOS Low Noise Amplifier Presenter: Chun-Han Hou ( 侯 鈞 瀚 ) 1 Yueh-Hua Yu, Yi-Jan Emery Chen, and Deukhyoun Heo* Department of.
1 Your Name Your Department or Company Date, 2015.
class B, AB and D rf power amplifiers in 0,40 um cmos teChnology
RFIC – Atlanta June 15-17, 2008 RMO1C-3 An ultra low power LNA with 15dB gain and 4.4db NF in 90nm CMOS process for 60 GHz phase array radio Emanuel Cohen.
Jinna Yan Nanyang Technological University Singapore
學生 : 李國彰 指導教授 : 賴永齡老師 A 1.5V 2.4GHz CMOS Mixer with high linearity ( The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, December 6-9, 2004.
Introduction LNA Design figure of merits: operating power consumption, power gain, supply voltage level, noise figure, stability (Kf & B1f), linearity.
Rakshith Venkatesh 14/27/2009. What is an RF Low Noise Amplifier? The low-noise amplifier (LNA) is a special type of amplifier used in the receiver side.
3-Stage Low Noise Amplifier Design at 12Ghz
Mackenzie Cook Mohamed Khelifi Jonathon Lee Meshegna Shumye Supervisors: John W.M. Rogers, Calvin Plett 1.
M. Atef, Hong Chen, and H. Zimmermann Vienna University of Technology
Integrated Phased Array Systems in Silicon
Ultra-low Power Components
Communication 40 GHz Anurag Nigam.
A 1 V RF front-end for both HIPERLAN2 and a
Variable Gain CMOS LNA MOREIRA E SILVA, Paulo Marcio, DE SOUSA, Fernando Rangel Introduction Simulation.
A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique Microwave and Wireless Components Letters, IEEE Volume 17,  Issue.
A Novel 1. 5V CMFB CMOS Down-Conversion Mixer Design for IEEE 802
A Low-Noise and Low-Power LNA and Mixer for 24-GHz Application
Basic Amplifiers and Differential Amplifier
5.8GHz CMOS 射頻前端接收電路 晶片設計實作 5.8GHz CMOS Front-End Circuit Design
Presentation transcript:

Phan Tuan Anh Dec Reconfigurable Multiband Multimode LNA for LTE/GSM, WiMAX, and IEEE a/b/g/n 17 th IEEE ICECS 2010, Athens, Greece.

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 1  Introduction Introduction  Design Approach Design Approach  Conclusions ConclusionsContent  Proposed Circuitry Proposed Circuitry  Simulation Results Simulation Results

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 2 Radio standards: - Rapid evolution next generation radio with WiMAX (3.5G), LTE (4G) along with existing GSM (2G), WLAN IEEE family.. Reconfigurable Radio… - SoC, SiP, MEMs.. - High demanding for new single device to combine multiple standards, working with different networks for various applications. CMOS is technology of Choice Introduction Introduction

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 3 Fig. 1 Source: Bob Iannucci, Nokia Required to support multi standards same chip - Reconfigurable, multiband multimode for various standards  Tunable input matching ? - High level of integration, reduce cost - Maintain the same performance as single radio Next generation: Reconfigurable Radio

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 4  LNA is the first block in Rx RF front-end - Determine the radio condition: Freq channel, provide Gain, suppress Noise to improve channel sensitivity and selectivity - Input matching for various bands - Reconfigurable over the band for various applications: LTE/GSM at 1.9GHz, WLAN/Bluetooth b/g/n at 2.4GHz, WiMAX at 3.5GHz, a/n WLAN at 5.2GHz.  Ultimate Goal: Low cost, low power, high performance using CMOS technology.  Ready for any existing wireless standards Design Challenges

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 5  Reconfigurable LNA Design Approach Fig. 2. Reconfigurable Principle of the LNA - Selection solely or jointly a bank of cascode LNAs

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 6 + Switching CG Devices for various band configuration of cascode LNA Proposed Multiband LNA Fig. 3. Schematic of the proposed multiband LNA

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 7 + Input matching - Inductive degenerative input matching - As M 0 varies, L G (~10nH) is varied for better matching. - Bit D1-4 controls the selection of corresponding band. + Load and Buffer - Inductive load L L (4-8nH) and source follower buffer are shared - Reduce the chip size - Different bands are optimized with its own output Cap bank C Gain control - Selection of Gm’s device size M 0 - Optimize for power consumption Proposed Multiband LNA: Features

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 8  Input matching and Output matching Simulation Results: S11 and S22 Fig. 4. S11 and S22 for different standards of proposed LNA - Inductive degeneration Ls is used for good NF -L G is needed for better matching as M 0 size varying for various bands - Good S11 and S22 achieved

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 9 Simulation Results: S21 and NF Fig. 5. Typical Gain mode and NF of different standards - Good gain over different bands - NF is quite good at low frequency and reasonable at high band

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 10  Gain Tuning Simulation Results: Gain variable Fig. 6. Variable gain function over different bands - Varying Gm by selecting bank of M 0 devices for sizing and bias current. - From low to maximum gain mode, 10dB range.

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 11  Linearity at various bands Simulation Results: Linearity Fig. 7. Linearity at different bands in Low and High gain modes - High gain mode shows moderate IIP3 - Power consumption is 3/3.4/3.4/5.3mW at 1.9/2.4/3.5/5.2GHz bands, respectively V 0.18um CMOS

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 12  Performance summary and comparison Performance Summary Freq. (GHz) Power (mW) S21 (dB) S11 (dB) NF (dB)IIP3 Tech. μm Topology This work Cascode bank selection [4]2.4/ / /4.50/ Concurrent Dual-band [6]DC > n Res.SF.Feed- back [8] Multitap Ind. [9] 0.9÷ Switched Ind. [11] < CS. Single band

Phan T. Anh, Phan T. Anh, Dec IMWS, NUIM 13 A reconfigurable multi-standard LNA operating from 1.9G to 5.2G bands for most popular standard like LTE/GSM, WiMAX, WLAN family. Channel tuning by selection of various combination of cascode bank and input matching Good performances achieved in 0.18um CMOS Promising for single chip, next generation radio. Conclusions Thank You !